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公开(公告)号：US07816282B2
公开(公告)日：2010-10-19
申请号：US12019262
申请日：2008-01-24
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/409 , C23C16/45531 , C23C16/45553
摘要： A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.
摘要翻译： 一种方法用于在加工室内放置并加热的衬底上形成SrTiO 3膜，同时向处理室中供应气态Ti源材料，气态Sr源材料和气态氧化剂。 Sr（C5（CH3）5）2用作Sr源材料。 该方法进行多个周期以形成SrTiO 3膜。 每个循环依次包括将气态Ti源材料供应到处理室中，从而将其吸附到基底上; 将气态氧化剂供应到处理室中，从而分解由此吸附的Ti源材料，并形成含Ti氧化物膜; 将气态Sr源材料供给到处理室中，从而将其吸附到含Ti氧化物膜上; 并将气态氧化剂供给到处理室中，从而分解由此吸附的Sr源材料，并形成含Sr的氧化物膜。
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公开(公告)号：US20090004383A1
公开(公告)日：2009-01-01
申请号：US12145831
申请日：2008-06-25
IPC分类号： C23C16/06
CPC分类号： C07F17/00
摘要： The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO3 film, a (Ba, Sr)TiO3 film by chemical vapor deposition or atomic layer deposition.
摘要翻译： 本发明提供一种在室温至50℃处于液态的环戊二烯基锶化合物的含锶薄膜的形成方法，可以通过蒸馏纯化，作为单体存在，具有高的 蒸汽压力，适合批量生产。 使用双（丙基四甲基环戊二烯基）锶作为Sr源，通过化学气相沉积或原子层沉积形成SrTiO 3膜，（Ba，Sr）TiO 3膜等含锶的薄膜。
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公开(公告)号：US06426425B2
公开(公告)日：2002-07-30
申请号：US09798724
申请日：2001-03-02
申请人： Hidekimi Kadokura , Tadashi Ishii
发明人： Hidekimi Kadokura , Tadashi Ishii
IPC分类号： C07F500
摘要： The invention provides a process for purifying gallium alkoxides by decreasing the amount of impurity chlorine contained therein, gallium alkoxides which are useful as raw materials for the formation of dielectrics containing gallium oxide and as raw materials for the syntheses of compounds for photoelectronics. Gallium isopropoxide containing 0.98 weight percent of chlorine and potassium isopropoxide of 1.4 equivalents to the impurity chlorine are refluxed in toluene as a solvent for 5 hours, the solvent is distilled away, and the residue is simply distilled under vacuum to obtain gallium isopropoxide containing 0.022 weight percent of the chlorine in a 89% yield.
摘要翻译： 本发明提供了通过减少其中所含的杂质氯的量来净化烷氧化镓的方法，其可用作形成含氧化镓的电介质的原料的镓醇盐和作为用于合成光电子的化合物的原料。 含有0.98重量％氯化异丙醇和异丙醇钾的异丙醇钠与杂质氯1.4当量的异丙醇在甲苯中作为溶剂回流5小时，蒸馏除去溶剂，并将残余物在真空下蒸馏，得到含有0.022重量％的异丙醇镓 氯的百分比为89％。
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4.发明授权
公开(公告)号：US5929267A
公开(公告)日：1999-07-27
申请号：US251752
申请日：1999-02-17
申请人： Hidekimi Kadokura
发明人： Hidekimi Kadokura
摘要： A Pt compound which is in the form of a liquid at room temperature for producing Pt films usable as electrode films in semiconductor devices by the CVD method; a process for producing the compound; and a process for producing films with the use of the same.A novel compound trimethyl(ethylcyclopentadienyl)platinum (C.sub.2 H.sub.5 C.sub.5 H.sub.4)Pt(CH.sub.3).sub.3 is in the form of a liquid at room temperature and shows a sufficient vapor pressure at around 35.degree. C. Thus, it can be quantitatively supplied by gas bubbling or with the use of a liquid mass flow controller as a feedstock in the CVD method and thermally decomposed on a substrate at 150.degree. C. in a hydrogen atmosphere to give pure Pt films. This compound can be produced at a high yield by reacting iodotrimethylplatinum with sodium ethylcyclopentadienide in a solvent.
摘要翻译： 在室温下为液体形式的Pt化合物，用于通过CVD法制造可用作半导体器件中的电极膜的Pt膜; 一种制备该化合物的方法; 以及使用其制造膜的方法。 在室温下，新型化合物三甲基（乙基环戊二烯基）铂（C 2 H 5 C 5 H 4）Pt（CH 3）3为液体形式，在35℃左右显示出足够的蒸汽压。因此，可以通过气体鼓泡或与 在CVD方法中使用液体质量流量控制器作为原料，并在氢气氛中在150℃下在基板上热分解，得到纯Pt膜。 该化合物可以通过使碘代三甲基铂与乙基环戊二烯钠在溶剂中反应而以高产率生产。
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公开(公告)号：US5002750A
公开(公告)日：1991-03-26
申请号：US409052
申请日：1989-09-19
IPC分类号： C04B35/622 , C08G77/58 , C08G79/10 , D01F9/08 , D01F9/10
CPC分类号： D01F9/08 , C04B35/62245 , C08G77/58 , C08G79/10
摘要： A process for producing an alumina-based fiber, which involves mixing an aluminum compound represented by the general formula AIR.sub.1 R.sub.2 R.sub.3 (wherein R.sub.1 R.sub.2 and R.sub.3 are each an organic group or a halogen) with water in a molar ratio of ([H.sub.2 O]/[AIR.sub.1 R.sub.2 R.sub.3 ]) of 1.10 to 1.40 to produce a polyaluminoxane, mixing the polyaluminoxane with at least one silicon-containing compound in an amount such that desired alumina-based fiber has, after calcining, a silica content of up to 70%, spinning the resulting mixture of polyaluminoxane and silicon-containing compound under an atmosphere controlled at a temperature of above 28.degree. C. and a relative humidity of above 35% to obtain precursor fiber, and then calcinating the precursor fiber to obtain an alumina-based fiber.
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公开(公告)号：US4961889A
公开(公告)日：1990-10-09
申请号：US385955
申请日：1989-07-28
CPC分类号： C04B35/62231 , D01F9/08 , Y10S264/19
摘要： A process for producing an inorganic fiber superior in stretchability, which comprises; heating either a solution of a polymetalloxane in an organic solvent, the polymetalloxane content in the solution being at least 85% by weight and the viscosity of the solution at 25.degree. C. being at least 5000 poises, or a solid state polymetalloxane to prepare a spinning liquid having a viscosity of 1 to 3000 poises; spinning the spinning liquid to form a precursor fiber; and baking the precursor fiber.
摘要翻译： 一种拉伸性优异的无机纤维的制造方法，其特征在于， 加热聚氧乙烯溶于有机溶剂的溶液中，溶液中的聚氧代烷烃含量为至少85重量％，溶液在25℃下的粘度为至少5000泊，或固态聚氧化乙烯，以制备 纺丝液的粘度为1〜3000泊; 纺丝纺丝液形成前体纤维; 并烘烤前体纤维。
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公开(公告)号：US4797500A
公开(公告)日：1989-01-10
申请号：US184115
申请日：1988-04-21
申请人： Hidekimi Kadokura , Kenichi Sawara , Tadaaki Yako
发明人： Hidekimi Kadokura , Kenichi Sawara , Tadaaki Yako
摘要： A method for purifying an organometallic compound in which an organometallic compound of gallium, aluminum or indium is contacted with at least one metal selected from metallic sodium, metallic potassium and a sodium-potassium alloy. This method is especially efficacious when the high-purity organometallic compound is used as a semiconductor because, by the disclosed method, the silicon components are removed as impurities, which silicon material tends to lower the electrical characteristics of the semiconductor.
摘要翻译： 一种纯化有机金属化合物的方法，其中将镓，铝或铟的有机金属化合物与至少一种选自金属钠，金属钾和钠 - 钾合金的金属接触。 当使用高纯度有机金属化合物作为半导体时，该方法特别有效，因为通过所公开的方法将硅成分作为杂质除去，硅材料倾向于降低半导体的电特性。
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公开(公告)号：US4704266A
公开(公告)日：1987-11-03
申请号：US872901
申请日：1986-06-11
CPC分类号： C01F7/043 , H01M8/0295 , Y02P70/56
摘要： A method for producing .gamma.-form lithium aluminate powders usable as a material for an electrolyte tile of molten carbonate fuel cells which comprises mixing aluminum alkoxide with one member selected from the group consisting of the lithium salts of inorganic and organic acids, lithium hydroxide and lithium oxide in the presence of a non-aqueous solvent, carrying out reaction with addition of water of 1.5 to 20 moles (including water of crystallization contained in the lithium compound) based on 1 mole of aluminum alkoxide with stirring, and removing the solvent to obtain a solid matter which is then calcined at a temperature in a range of from 650.degree. C. to 1000.degree. C.
摘要翻译： 一种制造可用作熔融碳酸盐燃料电池的电解质瓦的材料的γ-型铝酸锂粉末的方法，其包括将烷醇铝与选自无机和有机酸的锂盐，氢氧化锂和锂的一种物质混合 氧化物，在非水溶剂存在下，在搅拌下，以1摩尔醇铝水溶液加入1.5〜20摩尔的水（包括锂化合物中所含的结晶水）进行反应，除去溶剂，得到 固体物质，然后在650℃至1000℃的温度下煅烧。
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9.发明授权Raw material for forming a strontium-containing thin film and process for preparing the raw material 有权用于形成含锶薄膜的原料和用于制备原料的方法公开(公告)号：US07635441B2
公开(公告)日：2009-12-22
申请号：US12145843
申请日：2008-06-25
IPC分类号： C07F3/00
CPC分类号： C07F17/00
摘要： The present invention provides a raw material for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production, and a process for preparing the same. Sr[C5(CH3)4(C3H7)]2 is prepared by reacting Na[C5(CH3)4(C3H7)]2 or K[C5(CH3)4(C3H7)]2 with SrI2 in THF to produce a THF adduct of Sr[C5(CH3)4(C3H7)]2; evaporating THF and extracting the residue with toluene to give a toluene solution; evaporating toluene and drying the residue under reduced pressure; and heating to 100 to 160° C. in vacuo to dissociate and remove THF and distilling.
摘要翻译： 本发明提供了一种用于形成在室温至50℃处于液态的环戊二烯基锶化合物的含锶薄膜的原料，可以通过蒸馏纯化，作为单体存在，具有 高蒸气压，适合批量生产，及其制备方法。 通过使Na [C 5（CH 3）4（C 3 H 7）] 2或K [C 5（CH 3）4（C 3 H 7）] 2与THF中的SrI 2反应制备THF [C5（CH3）4（C3H7） 的Sr [C5（CH3）4（C3H7）] 2; 蒸发THF并用甲苯萃取残余物，得到甲苯溶液; 蒸发甲苯并减压干燥残余物; 并在真空中加热至100至160℃以离解并除去THF并蒸馏。
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10.发明申请公开(公告)号：US20090001618A1
公开(公告)日：2009-01-01
申请号：US12145843
申请日：2008-06-25
IPC分类号： C07F3/00
CPC分类号： C07F17/00
摘要： The present invention provides a raw material for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production, and a process for preparing the same. Sr[C5(CH3)4(C3H7)]2 is prepared by reacting Na[C5(CH3)4(C3H7)]2 or K[C5(CH3)4(C3H7)]2 with SrI2 in THF to produce a THF adduct of Sr[C5(CH3)4(C3H7)]2; evaporating THF and extracting the residue with toluene to give a toluene solution; evaporating toluene and drying the residue under reduced pressure; and heating to 100 to 160° C. in vacuo to dissociate and remove THF and distilling.
摘要翻译： 本发明提供了一种用于形成在室温至50℃处于液态的环戊二烯基锶化合物的含锶薄膜的原料，可以通过蒸馏纯化，作为单体存在，具有 高蒸气压，适合批量生产，及其制备方法。 通过使Na [C 5（CH 3）4（C 3 H 7）] 2或K [C 5（CH 3）4（C 3 H 7）] 2与THF中的SrI 2反应制备THF [C5（CH3）4（C3H7） 的Sr [C5（CH3）4（C3H7）] 2; 蒸发THF并用甲苯萃取残余物，得到甲苯溶液; 蒸发甲苯并减压干燥残余物; 并在真空中加热至100至160℃以离解并除去THF并蒸馏。
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