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公开(公告)号：US4624533A
公开(公告)日：1986-11-25
申请号：US482695
申请日：1983-04-06
申请人： Herman P. Schutten , Robert W. Lade , James A. Benjamin , Stanley V. Jasolski , Gordon B. Spellman
发明人： Herman P. Schutten , Robert W. Lade , James A. Benjamin , Stanley V. Jasolski , Gordon B. Spellman
IPC分类号： G02F1/015
CPC分类号： G02F1/015
摘要： A solid display is provided by a semiconductor switched between transparent and opaque conditions according to external removal of carriers from the conduction band for controlling absorption of light-energy. A semiconductor has an energy band gap affording a normally saturated conduction band in response to impinging light energy of a given range wavelength. The normally saturated condition of the semiconductor prevents further absorption, and enables light to pass thererthrough. The semiconductor is switched to an opaque condition by completing an electric circuit for removing carriers from the conduction band to enable further absorption of incident light in the semiconductor by raising additional carriers from the valence band to the conduction band.
摘要翻译： 根据外部去除载波从导带控制光能的吸收，通过在透明和不透明条件之间切换的半导体提供实体显示。 半导体具有响应于给定范围波长的入射光能而提供正常饱和导带的能带隙。 半导体的正常饱和状态阻止了进一步的吸收，并且使光能够通过。 通过完成用于从导带去除载流子的电路，半导体被切换到不透明状态，以通过从带附加引导附加载流子到导带来进一步吸收半导体中的入射光。
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公开(公告)号：US4504964A
公开(公告)日：1985-03-12
申请号：US420557
申请日：1982-09-20
申请人： Louis Cartz , Arnold Weiss , Herman P. Schutten , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
发明人： Louis Cartz , Arnold Weiss , Herman P. Schutten , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
CPC分类号： H05G2/001 , B82Y10/00 , G03F7/70033 , G21B1/23
摘要： A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma vapor is repeatably generated directly from solid material by impingement of a plurality of circumferentially spaced laser beams to generate an annulus of plasma. X-rays are generated by passing high current through the annular plasma in an axial gap between the solid material target electrode and another electrode, causing magnetic field radial inward plasma pinching to a central constricted area further heating the plasma and emitting X-rays. A central axially directed laser may further heat the plasma in the pinched area.
摘要翻译： 提供了一种用于产生可用于X射线光刻的等离子体夹持X射线的系统。 电离加热的等离子体蒸气可以通过多个周向间隔开的激光束的冲击直接从固体材料产生，以产生等离子体的环形空间。 通过在固体材料靶电极和另一电极之间的轴向间隙中使高电流通过环形等离子体而产生X射线，从而使得磁场向内的等离子体向中心收缩区域的夹持进一步加热等离子体并发射X射线。 中心轴向激光器可以进一步加热挤压区域中的等离子体。
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3.发明授权Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor 失效具有垂直功率晶体管的集成门极关断装置，其形成具有横向晶体管的再生回路
公开(公告)号：US4355322A
公开(公告)日：1982-10-19
申请号：US184844
申请日：1980-09-08
IPC分类号： H01L29/08 , H01L29/73 , H01L29/74 , H01L29/744
CPC分类号： H01L29/744 , H01L29/0821 , H01L29/7302 , H01L29/74
摘要： A monolithically integrated gate turn-off device is disclosed comprising a vertical power transistor collector-base connected with a lateral transistor to form a regenerative loop. The device is turned on by signal current of one polarity applied to the base of the power transistor driving the latter into conduction, and remains ON upon removal of the signal current due to base drive supplied by the collector of the other transistor in the regenerative loop. The device is turned OFF by signal current of opposite polarity breaking the regenerative loop.
摘要翻译： 公开了一种单片集成门极关断装置，其包括与横向晶体管连接以形成再生环路的垂直功率晶体管集电极 - 基极。 该器件由施加到功率晶体管的基极的一个极性的信号电流导通，将其驱动为导通，并且由于在再生环路中由另一个晶体管的集电极提供的基极驱动而消除信号电流时保持导通 。 通过相反极性的信号电流使器件断开，从而破坏再生回路。
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公开(公告)号：USRE30514E
公开(公告)日：1981-02-10
申请号：US21789
申请日：1979-03-19
IPC分类号： G05D23/20 , H02H5/04 , H03K17/08 , H03K17/082 , H03K17/73
CPC分类号： G05D23/20 , H02H5/044 , H03K17/0824 , H03K17/73 , H03K2017/0806
摘要： A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.
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5.发明授权
公开(公告)号：US4206646A
公开(公告)日：1980-06-10
申请号：US946179
申请日：1978-09-27
摘要： A transducer is disclosed which provides a digital indication of a sensed analog condition without the need of an analog to digital (A/D) converter or a comparator. A condition responsive element having a true abrupt switching characteristic at a known breakover voltage as a function of a condition being sensed is biased by a voltage source preferably supplying a periodic voltage as a known function of time. The point during the voltage source cycle at which the condition responsive element switches to its other state is determined by the sensed condition. Preferably, a clock of known frequency is enabled when the condition responsive element is in one of its states, whereby clock pulses are counted during an interval whose duration is determined by the sensed condition. The number of clock pulses counted is a digital value of the analog condition being sensed because: (i) the clock frequency is known; (ii) the voltage/time relation of the voltage source is known; and (iii) the voltage/sensed condition relation of the condition responsive element is known. A thermally sensitive thyristor is specifically disclosed for the condition responsive element.
摘要翻译： 公开了一种传感器，其提供感测模拟状态的数字指示，而不需要模数（A / D）转换器或比较器。 具有作为感测条件的函数的已知的断开电压具有真正的突变切换特性的条件响应元件被优选地提供作为已知时间功能的周期性电压的电压源偏置。 在状态响应元件切换到其它状态的电压源周期期间的点由感测到的条件确定。 优选地，当条件响应元件处于其状态之一时，已知频率的时钟被使能，从而在其持续时间由感测到的条件确定的间隔期间对时钟脉冲进行计数。 计数的时钟脉冲的数量是由于（i）时钟频率已知的，感测的模拟条件的数字值; （ii）电压源的电压/时间关系是已知的; 以及（iii）条件响应元件的电压/感测条件关系是已知的。 专门针对条件响应元件公开了一种热敏晶闸管。
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公开(公告)号：US4184126A
公开(公告)日：1980-01-15
申请号：US946181
申请日：1978-09-27
摘要： A temperature sensitive thyristor is incorporated with an astable multivibrator to provide active temperature sensing. Below the switching temperature Tsw of the thyristor, an oscillatory signal is present at the output of the multivibrator. When the temperature exceeds Tsw, oscillation ceases because of the shunt path provided through the thyristor when it intrinsically switches to its low resistance on state above Tsw. Cooling results in resumption of oscillation. This is a "fail-safe" arrangement because component failure also provides a warning condition (absence of oscillation).
摘要翻译： 温度敏感晶闸管与不稳定的多谐振荡器并入，以提供主动温度感测。 在晶闸管的开关温度Tsw之下，振荡信号存在于多谐振荡器的输出端。 当温度超过Tsw时，由于通过晶闸管提供的分流路径，当其本质上切换到Tsw以上的低电阻时，振荡停止。 冷却导致振荡恢复。 这是一个“故障安全”的安排，因为组件故障也提供了一个警告条件（没有振荡）。
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公开(公告)号：US4087848A
公开(公告)日：1978-05-02
申请号：US725105
申请日：1976-09-20
IPC分类号： G05D23/20 , H02H5/04 , H03K17/08 , H03K17/082 , H03K17/73
CPC分类号： G05D23/20 , H02H5/044 , H03K17/0824 , H03K17/73 , H03K2017/0806
摘要： A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.
摘要翻译： 公开了一种半导体器件，其包括热耦合到功率开关晶闸管的温度敏感晶闸管，并且与其并联电连接。 温度敏感晶闸管感测功率开关晶闸管的温度，并通过分流栅极电流自动响应于预定温度高于预定温度，以防止功率开关晶闸管过热。 该装置还可包括第二温度敏感晶闸管，其具有比第一晶闸管更低的开关温度并与功率开关晶闸管的栅极串联连接，由此后者可以仅在由开关限制的限定温度范围内被触发导通 温度敏感晶闸管的温度。 通常也关闭和正常使用设备。
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公开(公告)号：US4618971A
公开(公告)日：1986-10-21
申请号：US651052
申请日：1984-09-13
申请人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
发明人： Arnold Weiss , Herman P. Schutten , Louis Cartz , Gordon B. Spellman , Stanley V. Jaskolski , Peter H. Wackman, deceased
IPC分类号： G03F7/20 , H05G2/00 , H05H1/04 , G21K5/00 , H01L21/302
CPC分类号： H05G2/003 , G03F7/70033 , H05H1/04
摘要： A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial inward magnetic field pinching. Accurate control and improved intensity performance, and greater flexibility in selection of X-ray emitting materials, are provided by the separation of the plasma generating and the X-ray pinch generating functions. Common electrode structure is provided for plasma generating and for plasma pinching, which common electrode also provides a cylindrical plasma communication passage from the first to the second area, and provides an X-ray emission passage of desired axial orientation.
摘要翻译： 提供了一种用于产生可用于X射线光刻的等离子体夹持X射线的系统。 电离加热的等离子体可以直接从固体材料在第一区域中重复产生，而不会使后者爆炸。 通过使高电流通过等离子体产生径向向内的磁场夹紧，在第二区域中产生X射线。 通过分离等离子体产生和X射线捏合产生功能，提供精确的控制和改进的强度性能以及选择X射线发射材料的更大灵活性。 提供公共电极结构用于等离子体产生和等离子体夹持，该公共电极还提供从第一区域到第二区域的圆柱形等离子体连通通道，并且提供具有期望轴向取向的X射线发射通道。
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公开(公告)号：US4516144A
公开(公告)日：1985-05-07
申请号：US421942
申请日：1982-09-23
申请人： Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman , Jan K. Sedivy , Maurice W. Jensen
发明人： Stanley V. Jaskolski , Herman P. Schutten , Gordon B. Spellman , Jan K. Sedivy , Maurice W. Jensen
CPC分类号： H01L43/065
摘要： A Hall effect semiconductor device is provided with means for clipping or focusing emitted carriers to form a centralized columnated beam, and trimming means for accurately controlling the amount of magnetic deflection due to Lorentz force. Emitters from an emitter region travel through a base region under influence of an externally applied drift field toward a pair of spaced collector regions. The polarity of a perpendicularly applied magnetic field determines deflection of the carriers toward one or the other of the collector regions. The columnating means comprises a pair of spaced auxiliary collector regions intermediate the emitter region and the primary collector regions for collecting carriers not within a central angle or cone. A columnated beam is provided by carriers passing between the auxiliary collectors within the central angle or cone. Trimming of the beam is provided by a selectable electric field applied in the same direction as deflection of the carriers to thus control the amount of beam deflection and insure that the beam is directed toward the one or other primary collector.
摘要翻译： 霍尔效应半导体器件设置有用于限制或聚焦发射的载流子以形成集中的柱状光束的装置，以及用于精确地控制由洛伦兹力引起的磁偏转量的修整装置。 来自发射极区域的发射体在外部施加的漂移场的影响下穿过基极区域朝向一对间隔开的收集器区域。 垂直施加的磁场的极性决定了载流子朝向收集器区域中的一个或另一个的偏转。 柱形装置包括在发射极区域和初级收集器区域之间的一对间隔的辅助收集器区域，用于收集不在中心角或锥体内的载体。 柱状梁由位于中心角或锥体内的辅助收集器之间的载体提供。 通过沿与载体的偏转相同的方向施加的可选择的电场来提供光束的修整，从而控制光束偏转的量并且确保光束被引向一个或另一个主要收集器。
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10.发明授权Integrated gate turn-off device with lateral regenerative portion and vertical non-regenerative power portion 失效具有横向再生部分和垂直非再生电力部分的集成门禁关闭装置
公开(公告)号：US4268846A
公开(公告)日：1981-05-19
申请号：US972506
申请日：1978-12-22
IPC分类号： H01L29/08 , H01L29/744 , H01L29/74
CPC分类号： H01L29/0821 , H01L29/744
摘要： A gate turn-off device is formed by the integration of a lateral SCR and a vertical power transistor operating in parallel, with the latter carrying most of the load current whereby the former may be easily turned off which in turn terminates base drive to the transistor and thus the device is turned OFF.
摘要翻译： 栅极关断装置通过横向SCR和并联工作的垂直功率晶体管的集成形成，后者承载大部分负载电流，由此可以容易地关闭栅极，从而使基极驱动到晶体管 因此该设备被关闭。
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