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    BRIDGE TYPE SENSOR WITH TUNABLE CHARACTERISTIC
    2.
    发明申请
    BRIDGE TYPE SENSOR WITH TUNABLE CHARACTERISTIC 审中-公开
    具有调节特性的桥式传感器

    公开(公告)号：US20100001723A1

    公开(公告)日：2010-01-07

    申请号：US11721681

    申请日：2005-12-15

    Applicant: Hans Van Zon ,  Jaap Ruigrok ,  Frederik Willem Maurits Vanhelmont ,  Gunnar Schulz-Mewes

    Inventor： Hans Van Zon ,  Jaap Ruigrok ,  Frederik Willem Maurits Vanhelmont ,  Gunnar Schulz-Mewes

    IPC: G01R33/02

    CPC classification number: G01R33/09

    Abstract: A bridge type magnetic sensor is disclosed having four resistive elements in a bridge arrangement, two of the resistive elements on opposing sides of the bridge having a magnetoresistive characteristic such that their resistance increases with increasing positive magnetic field and with increasing negative magnetic field. A frequency doubling is obtained because the output characteristic of the magnetic sensor is a V-shaped curve, where the signal rises for increasing positive and negative fields.

    Abstract translation: 公开了一种桥式磁传感器，其具有桥式布置中的四个电阻元件，桥的相对侧上的两个电阻元件具有磁阻特性，使得它们的电阻随着正磁场增加和负磁场增加而增加。 由于磁传感器的输出特性是V形曲线，其中信号上升以增加正场和负场，因此获得倍频。

    MAGNETORESISTIVE SENSOR
    3.
    发明申请
    MAGNETORESISTIVE SENSOR 有权
    磁传感器

    公开(公告)号：US20120025819A1

    公开(公告)日：2012-02-02

    申请号：US13191730

    申请日：2011-07-27

    Applicant: Kim Phan Le ,  Frederik Willem Maurits Vanhelmont ,  Jaap Ruigrok ,  Andreas Bernardus Maria Jansman ,  Robert Hendrikus Margaretha van Veldhoven

    Inventor： Kim Phan Le ,  Frederik Willem Maurits Vanhelmont ,  Jaap Ruigrok ,  Andreas Bernardus Maria Jansman ,  Robert Hendrikus Margaretha van Veldhoven

    IPC: G01R33/02

    CPC classification number: G01R33/09 ,  G01R33/096

    Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

    Abstract translation: 公开了包括第一和第二磁阻元件的磁阻传感器。 每个磁阻元件在相应的第一端处耦合到公共接地端子，并且包括一个或多个磁阻片段，每个磁阻片段覆盖激励线圈的相应片段。 第一和第二磁阻元件中的每一个中的磁阻部分的电阻相同，并且与第一磁阻元件相对应的激励线圈的段的电阻与对应于第一磁阻元件的激励线圈的段的电阻相同 第二磁阻元件。

    Magnetic field sensor
    4.
    发明授权
    Magnetic field sensor 有权
    磁场传感器

    公开(公告)号：US08564287B2

    公开(公告)日：2013-10-22

    申请号：US13020694

    申请日：2011-02-03

    Applicant: Frederik Willem Maurits Vanhelmont ,  Mark Isler ,  Andreas Bernardus Maria Jansman ,  Robertus Adrianus Maria Wolters

    Inventor： Frederik Willem Maurits Vanhelmont ,  Mark Isler ,  Andreas Bernardus Maria Jansman ,  Robertus Adrianus Maria Wolters

    IPC: G01R33/09

    CPC classification number: G01R33/0052 ,  B82Y25/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/096

    Abstract: An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

    Abstract translation: MR传感器装置与IC集成。 图案化IC结构（例如CMOS）的金属层以限定至少第一和第二接触区域。 金属连接插头设置在金属层的第一和第二接触区域的下方，用于与集成电路的端子接触。 磁阻材料层位于金属层的上方并被电介质层分离。 第二金属连接插头从金属层向上延伸到MR传感器层。 因此，传感器层形成在IC结构的层的顶部上。

    Magnetoresistive sensor
    6.
    发明授权
    Magnetoresistive sensor 有权
    磁阻传感器

    公开(公告)号：US08680857B2

    公开(公告)日：2014-03-25

    申请号：US13191730

    申请日：2011-07-27

    Applicant: Kim Phan Le ,  Frederik Willem Maurits Vanhelmont ,  Jaap Ruigrok ,  Andreas Bernardus Maria Jansman ,  Robert Hendrikus Margaretha van Veldhoven

    Inventor： Kim Phan Le ,  Frederik Willem Maurits Vanhelmont ,  Jaap Ruigrok ,  Andreas Bernardus Maria Jansman ,  Robert Hendrikus Margaretha van Veldhoven

    IPC: G01R33/02

    CPC classification number: G01R33/09 ,  G01R33/096

    Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

    Abstract translation: 公开了包括第一和第二磁阻元件的磁阻传感器。 每个磁阻元件在相应的第一端处耦合到公共接地端子，并且包括一个或多个磁阻片段，每个磁阻片段覆盖激励线圈的相应片段。 第一和第二磁阻元件中的每一个中的磁阻部分的电阻相同，并且与第一磁阻元件相对应的激励线圈的段的电阻与对应于第一磁阻元件的激励线圈的段的电阻相同 第二磁阻元件。

    Thin-film bulk-acoustic wave (BAW) resonators
    8.
    发明授权
    Thin-film bulk-acoustic wave (BAW) resonators 有权
    薄膜体声波（BAW）谐振器

    公开(公告)号：US08008993B2

    公开(公告)日：2011-08-30

    申请号：US12088721

    申请日：2006-09-28

    Applicant: Robert Frederick Milsom ,  Frederik Willem Maurits Vanhelmont ,  Andreas Bernardus Maria Jansman ,  Jaap Ruigrok ,  Hans-Peter Loebl

    Inventor： Robert Frederick Milsom ,  Frederik Willem Maurits Vanhelmont ,  Andreas Bernardus Maria Jansman ,  Jaap Ruigrok ,  Hans-Peter Loebl

    IPC: H03H9/15 ,  H03H9/54 ,  H03H3/02

    CPC classification number: H03H9/02118 ,  H03H9/0211 ,  H03H9/174 ,  H03H9/175

    Abstract: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15%, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

    Abstract translation: 一种薄膜体声波（BAW）谐振器，例如SBAR或FBAR，用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层（14），在第一表面上延伸的第一电极（16）和在第二表面上延伸的第二电极（12） 确定谐振器的基本厚度延伸（TE）模式的激励区域的第一和第二电极的重叠（R1）。 通过在与第一电极（16）相同的层中提供介电材料（18）并围绕该电极来减小谐振器的插入损耗。 构成电介质材料（18）的材料与包含其所包围的第一电极（16）的材料具有不同的质量，通常在5％至15％之间。 电介质材料（18）的质量可以低于或高于第一电极（16）的质量。 介电材料（18）的平面化增强了器件的性能。

    THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS
    9.
    发明申请
    THIN-FILM BULK-ACOUSTIC WAVE (BAW) RESONATORS 有权
    薄膜大声波（BAW）谐振器

    公开(公告)号：US20090153268A1

    公开(公告)日：2009-06-18

    申请号：US12088721

    申请日：2006-09-28

    Applicant: Robert Frederick Milsom ,  Frederik Willem Maurits Vanhelmont ,  Andreas Bernardus Maria Jansman ,  Jaap Ruigrok ,  Hans-Peter Loebl

    Inventor： Robert Frederick Milsom ,  Frederik Willem Maurits Vanhelmont ,  Andreas Bernardus Maria Jansman ,  Jaap Ruigrok ,  Hans-Peter Loebl

    IPC: H03H9/15 ,  H03H9/54 ,  H03H9/205 ,  H01L41/047

    CPC classification number: H03H9/02118 ,  H03H9/0211 ,  H03H9/174 ,  H03H9/175

    Abstract: A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15 %, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

    Abstract translation: 一种薄膜体声波（BAW）谐振器，例如SBAR或FBAR，用于在1 GHz频率工作的RF选择性滤波器。 BAW谐振器包括在相对侧上具有第一和第二表面的压电层（14），在第一表面上延伸的第一电极（16）和在第二表面上延伸的第二电极（12） 确定谐振器的基本厚度延伸（TE）模式的激励区域的第一和第二电极的重叠（R1）。 通过在与第一电极（16）相同的层中提供介电材料（18）并围绕该电极来减小谐振器的插入损耗。 构成电介质材料（18）的材料与其包围的第一电极（16）的材料具有不同的质量，通常在5％至15％之间。 电介质材料（18）的质量可以低于或高于第一电极（16）的质量。 介电材料（18）的平面化增强了器件的性能。

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