公开(公告)号：US08704601B2

公开(公告)日：2014-04-22

申请号：US13516230

申请日：2010-12-15

Applicant: Sang Wook Nam ,  Yong Hoon Song ,  Sung Ho Lee ,  Jae Jun Lee ,  Eun II Cho

Inventor： Sang Wook Nam ,  Yong Hoon Song ,  Sung Ho Lee ,  Jae Jun Lee ,  Eun II Cho

IPC: H03F3/04

CPC classification number: H03F3/2176 ,  H03F1/223 ,  H03F3/195 ,  H03F3/45179 ,  H03F2200/06 ,  H03F2200/405 ,  H03F2200/54

Abstract: The present invention includes a class-E power amplifier, comprising a driver stage (DS) including a first power amplifier with transistors, to which an input signal is inputted; a main stage (MS), including a second power amplifier with transistors, whose input is connected to the output of the DS; and a first LC resonator whose one end is connected to the output of the DS and the other end to the ground as an AC equivalent circuit and a second LC resonator whose one end is connected to the input of the MS and the other end to the ground as an AC equivalent circuit. In accordance with the present invention, as the voltage stress is reduced on the CMOS class-E power amplifier, the application of the high power supply voltage may be allowed and therefore the load impedance may be high while the same efficiency is maintained.

Abstract translation: 本发明包括一个E类功率放大器，包括一个驱动级（DS），该驱动级包括一个输入信号的晶体管的第一功率放大器; 主级（MS），包括具有晶体管的第二功率放大器，其输入连接到DS的输出; 以及第一LC谐振器，其一端连接到DS的输出端，另一端连接到地面作为AC等效电路，第二LC谐振器的一端连接到MS的输入端，另一端连接到 作为交流等效电路接地。 根据本发明，由于CMOS E类功率放大器的电压应力降低，可以允许施加高电源电压，因此负载阻抗可能高，同时保持相同的效率。