公开(公告)号：US09017933B2

公开(公告)日：2015-04-28

申请号：US13072662

申请日：2011-03-25

申请人： Junjun Liu ,  Dorel I. Toma ,  Hongyu Yue

发明人： Junjun Liu ,  Dorel I. Toma ,  Hongyu Yue

IPC分类号： G03F7/40 ,  H01L21/67 ,  B08B7/00

CPC分类号： H01L21/67028 ,  B08B7/0042 ,  B08B7/005 ,  B08B7/0057 ,  H01L21/67115 ,  Y10S430/145

摘要： A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.

摘要翻译： 描述了一种用于处理衬底上的电介质膜的方法，特别是用于将低k电介质膜与随后形成的金属互连集成的方法。 该方法包括在基板上制备电介质膜，其中介电膜是介电常数小于或等于约4的低k电介质膜。此后，该方法还包括对 电介质膜，使用光刻工艺和蚀刻工艺在电介质膜中形成图案，从衬底去除不需要的残留物，并在电介质膜上进行最终的固化过程，其中最终的固化过程包括用紫外线（UV ）辐射。

公开(公告)号：US08242460B2

公开(公告)日：2012-08-14

申请号：US13072668

申请日：2011-03-25

申请人： Hongyu Yue ,  Junjun Liu ,  Jacques Faguet ,  Dorel I. Toma

发明人： Hongyu Yue ,  Junjun Liu ,  Jacques Faguet ,  Dorel I. Toma

IPC分类号： H01J37/20

CPC分类号： H01L21/67028 ,  B08B7/0042 ,  B08B7/005 ,  B08B7/0057 ,  H01L21/67115 ,  Y10S430/145

摘要： A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.

摘要翻译： 描述了用于处理电介质膜的处理模块，特别是用于将例如低介电常数（低k）电介质膜暴露于紫外线（UV））辐射的处理模块。 处理模块包括处理室，耦合到处理室并被配置为支撑衬底的衬底保持器，以及耦合到处理室并被配置为将电介质膜暴露于电磁（EM）辐射的辐射源。 辐射源包括UV源，其中UV源具有UV灯，以及用于将来自UV灯的反射的UV辐射引导到衬底的反射器。 反射器具有二向色反射器和设置在UV灯和衬底之间的非吸收反射器，并被配置为将来自UV灯的UV辐射反射到二向色反射器，其中非吸收反射器基本上防止来自UV灯的直接UV辐射 紫外灯到底物。

公开(公告)号：US20110237080A1

公开(公告)日：2011-09-29

申请号：US13072662

申请日：2011-03-25

申请人： Junjun LIU ,  Dorel I. TOMA ,  Hongyu YUE

发明人： Junjun LIU ,  Dorel I. TOMA ,  Hongyu YUE

IPC分类号： H01L21/302

CPC分类号： H01L21/67028 ,  B08B7/0042 ,  B08B7/005 ,  B08B7/0057 ,  H01L21/67115 ,  Y10S430/145

摘要： A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.

摘要翻译： 描述了一种用于处理衬底上的电介质膜的方法，特别是用于将低k电介质膜与随后形成的金属互连集成的方法。 该方法包括在基板上制备电介质膜，其中介电膜是介电常数小于或等于约4的低k电介质膜。此后，该方法还包括对 电介质膜，使用光刻工艺和蚀刻工艺在电介质膜中形成图案，从衬底去除不需要的残留物，并在电介质膜上进行最终的固化过程，其中最终的固化过程包括用紫外线（UV ）辐射。

公开(公告)号：US07858533B2

公开(公告)日：2010-12-28

申请号：US12043772

申请日：2008-03-06

申请人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

发明人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/268 ,  H01L21/31695

摘要： A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

摘要翻译： 描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括使低k电介质 膜对红外（IR）辐射和紫外线（UV）辐射。

公开(公告)号：US08444848B2

公开(公告)日：2013-05-21

申请号：US12697985

申请日：2010-02-01

申请人： Hongyu H. Yue ,  Junjun Liu ,  Dorel I. Toma

发明人： Hongyu H. Yue ,  Junjun Liu ,  Dorel I. Toma

IPC分类号： B23H7/02 ,  B23H7/38

CPC分类号： C25F3/02 ,  C25F7/00

摘要： An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.

摘要翻译： 描述了使用电化学蚀刻来切割工件的设备及其使用方法。 该设备包括配置成容纳电化学溶液的电化学浴，配置成将工件支撑并浸入电化学浴中的支撑装置，以及非接触式切割装置，其被配置成延伸到电化学浴中并通过电化学蚀刻沿切割工件 切割机 该装置还包括电磁（EM）辐射源，其构造成在沿着切割平面切割期间照亮形成在工件中形成的放射切割槽内的相对侧壁之间形成的切割表面。

公开(公告)号：US07977256B2

公开(公告)日：2011-07-12

申请号：US12043814

申请日：2008-03-06

申请人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

发明人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/3105

摘要： A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.

摘要翻译： 描述了在衬底上形成多孔低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于大约4的值。该方法包括将低k 介电膜对红外（IR）辐射，并调节低k电介质膜内的残留量的交联抑制剂，如孔产生材料。

公开(公告)号：US20090226694A1

公开(公告)日：2009-09-10

申请号：US12043835

申请日：2008-03-06

申请人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

发明人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

IPC分类号： B32B3/26 ,  C08J7/06

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  Y10T428/249953

摘要： A method of preparing a porous SiCOH-containing low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

摘要翻译： 描述了在衬底上制备含多孔SiCOH的低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括将 低k电介质膜对红外（IR）辐射和紫外线（UV）辐射。

公开(公告)号：US20090104571A1

公开(公告)日：2009-04-23

申请号：US11873977

申请日：2007-10-17

申请人： Junjun LIU ,  Dorel I. TOMA

发明人： Junjun LIU ,  Dorel I. TOMA

IPC分类号： G03F7/20

CPC分类号： H01L21/76835 ,  H01L21/31127 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  Y10S430/106 ,  Y10S430/128 ,  Y10S430/146

摘要： A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation.

摘要翻译： 描述了在衬底上选择性地去除牺牲材料的方法。 该方法包括在衬底上形成牺牲层。 此后，通过将牺牲层选择性地暴露于UV辐射，牺牲层在比通过热分解牺牲层所需的温度低的温度下选择性地分解。

公开(公告)号：US08895942B2

公开(公告)日：2014-11-25

申请号：US12211640

申请日：2008-09-16

申请人： Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

发明人： Junjun Liu ,  Jacques Faguet ,  Eric M. Lee ,  Dorel I. Toma ,  Hongyu Yue

IPC分类号： H01L21/67 ,  B23K26/08 ,  B23K26/12 ,  C23C16/56

CPC分类号： H01L21/67115 ,  B23K26/082 ,  B23K26/12 ,  B23K26/127 ,  C23C16/56

摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

摘要翻译： 描述了用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于约4的值。该系统包括一个或多个工艺模块配置 用于将低k电介质膜暴露于诸如红外（IR）辐射和紫外（UV）辐射的电磁（EM）辐射。

公开(公告)号：US08039049B2

公开(公告)日：2011-10-18

申请号：US11239294

申请日：2005-09-30

申请人： Eric M. Lee ,  Dorel I. Toma

发明人： Eric M. Lee ,  Dorel I. Toma

IPC分类号： C23C16/00

CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828

摘要： A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.

摘要翻译： 用于处理间歇处理系统中的电介质膜的方法和系统包括将电介质膜的至少一个表面暴露于包含含C x H y的化合物的处理化合物，其中x和y表示大于或等于1的整数。 当处理化合物被引入时，多个晶片被加热。 介电膜可以包括具有或不具有在干蚀刻处理之后形成的蚀刻特征的孔的低介电常数膜。