Abstract:
A lens arrangement is presented. The lens arrangement comprises a first element having a concave reflective surface and defining an optical axis of the lens arrangement, and a second substantially flat and at least partially reflective element spaced-apart from the first element along the optical axis. The second element is configured to allow light passage therethrough and is oriented with respect to the optical axis and the first element such that at a predetermined angle of incidence of an input light beam onto the second element, the input light beam is reflected onto the reflective surface of the first element and reflected therefrom to pass through the second element.
Abstract:
Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
Abstract:
An optical system for use in measurements in a sample comprising a light source (102) operable to produce an incident light beam propagating in a certain direction towards the sample (S) through an illumination channel (IC), a detector unit (104) for collecting light coming from the sample through a detection channel (DC), and generating data indicative of the collected light, a light directing assembly (106) operable to direct the incident beam onto a certain location on the sample's plane with a plurality of incident angles, and to direct light returned from the illuminated location to the detector unit (104), the light directing assembly (106) comprising a plurality of beam deflector elements (108 A-D), at least one of the deflector elements being movable and position of said at least one movable deflector element defining one of the selected incident angles.
Abstract:
A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of incident radiation. An optical model is provided, which is based on at least some of the features of the structure defined by a certain process of its manufacturing, and on the relation between a range of the wavelengths of incident radiation to be used for measurements and a pitch of the structure under measurements. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is a grid cycles containing area and is substantially larger than a surface area of the structure defined by one grid cycle, is located and spectrophotometric measurements are applied to the measurement area, by illuminating it with incident radiation of a preset substantially wide wavelength range. A light component substantially specularly reflected from the measurement area is detected, and measured data representative of photometric intensities of each wavelength within the wavelength range is obtained. The measured and theoretical data are analyzed and the optical model is optimized until the theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.
Abstract:
A lens arrangement is presented. The lens arrangement comprises a first element having a concave reflective surface and defining an optical axis of the lens arrangement, and a second substantially flat and at least partially reflective element spaced-apart from the first element along the optical axis. The second element is configured to allow light passage therethrough and is oriented with respect to the optical axis and the first element such that at a predetermined angle of incidence of an input light beam onto the second element, the input light beam is reflected onto the reflective surface of the first element and reflected therefrom to pass through the second element.
Abstract:
A lens arrangement is presented. The lens arrangement comprises a first element having a concave reflective surface and defining an optical axis of the lens arrangement, and a second substantially flat and at least partially reflective element spaced-apart from the first element along the optical axis. The second element is configured to allow light passage therethrough and is oriented with respect to the optical axis and the first element such that at a predetermined angle of incidence of an input light beam onto the second element, the input light beam is reflected onto the reflective surface of the first element and reflected therefrom to pass through the second element.
Abstract:
Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.
Abstract:
A method and system are presented for measuring in an electrically conductive film of a specific sample including data indicative of a free space response of an RF sensing coil unit to AC voltage applied to the RF sensing coil. The sensing coil is located proximate to the sample at a distance h substantially not exceeding 0.2 r wherein r is the coil radius; an AC voltage in a range from 100 MHz to a few GHz is applied to the sensing coil to cause generation of an eddy current passage through the conductive film; a response of the sensing coil to an effect of the electric current through the conductive film onto a magnetic field of the coil is detected and the measured data indicative of the response is generated. The thickness of the film is determined by utilizing the data indicative of the free space measurements to analyze the measured date. The method thus provides for measuring in conductive films with a sheet resistance Rs in a range from about 0.009 to about 2 Ohm/m2.
Abstract translation:提供了一种用于在特定样品的导电膜中测量的方法和系统,包括指示RF感测线圈单元的自由空间响应与施加到RF感测线圈的AC电压的数据。 感测线圈以基本上不超过0.2r的距离h定位在样本附近,其中r是线圈半径; 在感测线圈上施加从100MHz到几GHz范围内的AC电压,以产生通过导电膜的涡流通路; 检测到感测线圈对通过导电膜的电流对线圈的磁场的影响的响应,并且生成表示响应的测量数据。 通过利用表示自由空间测量的数据来分析测量日期来确定膜的厚度。 因此,该方法提供了在约0.009至约2Ohm / m 2的范围内的薄层电阻Rs的导电膜中的测量。
Abstract:
A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at least some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range. Light component substantially specularly reflected from the measurement area is detected and measured data representative of photometric intensities of each wavelength within the wavelength range is obtained. The measured and theoretical data are analyzed and the optical model is optimized until the theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.
Abstract:
Photovoltaic thin film quality control is obtained where the thin film is supported by a support and a section of the film is illuminated by a polychromatic or monochromatic illumination source. The illumination is positioned in certain locations including locations where the layer stack includes a reduced number of thin film layers. Such locations may be discrete sampled points located within scribe lines, contact frames or dedicated measurement targets. The light collected from such discrete sampled points is transferred to a photo-sensitive sensor through an optical switch. The spectral signal of the light reflected, transmitted or scattered by the sampled points is collected by the sensor and processed by a controller in such a way that parameters of simplified stacks are used for accurate determination of desired parameters of the full cell stack. In this way the photovoltaic thin film parameters applicable to the quality control are derived e.g. thin film thickness, index of refraction, extinction coefficient, absorption coefficient, energy gap, conductivity, crystallinity, surface roughness, crystal phase, material composition and photoluminescence spectrum and intensity. Manufacturing equipment parameters influencing the material properties may be changed to provide a uniform thin film layer with pre-defined properties.