公开(公告)号：US08853811B2

公开(公告)日：2014-10-07

申请号：US13290733

申请日：2011-11-07

Applicant: Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

Inventor： Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L21/02129 ,  H01L21/223 ,  H01L21/2255 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/09

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

Abstract translation: 提供了一种半导体图像传感器装置。 图像传感器装置包括基板。 图像传感器装置包括设置在基板中的第一像素和第二像素。 第一和第二像素是相邻像素。 图像传感器装置包括设置在基板中以及第一和第二像素之间的隔离结构。 图像传感器装置包括设置在基板中以及第一和第二像素之间的掺杂隔离装置。 掺杂隔离装置以保形方式围绕隔离结构。

公开(公告)号：US08377733B2

公开(公告)日：2013-02-19

申请号：US12890913

申请日：2010-09-27

Applicant: Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

Inventor： Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14625 ,  H01L27/14685

Abstract: The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.

Abstract translation: 本公开提供了一种显示出提高的量子效率的图像传感器装置。 例如，提供了背面照明（BSI）图像传感器装置，其包括具有前表面和后表面的基板; 设置在所述基板的前表面的感光区域; 以及设置在基板的背面上的抗反射层。 当在小于700nm的波长下测量时，抗反射层的折射率大于或等于约2.2，消光系数小于或等于约0.05。

公开(公告)号：US20120038015A1

公开(公告)日：2012-02-16

申请号：US12890913

申请日：2010-09-27

Applicant: Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

Inventor： Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC: H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14625 ,  H01L27/14685

Abstract: The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.

Abstract translation: 本公开提供了一种显示出提高的量子效率的图像传感器装置。 例如，提供了背面照明（BSI）图像传感器装置，其包括具有前表面和后表面的基板; 设置在所述基板的前表面的感光区域; 以及设置在基板的背面上的抗反射层。 当在小于700nm的波长下测量时，抗反射层的折射率大于或等于约2.2，消光系数小于或等于约0.05。

公开(公告)号：US09059057B2

公开(公告)日：2015-06-16

申请号：US13492258

申请日：2012-06-08

Applicant: Chun-Han Tsao ,  Chih-Yu Lai ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Shyh-Fann Ting ,  Chia-Shiung Tsai

Inventor： Chun-Han Tsao ,  Chih-Yu Lai ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Shyh-Fann Ting ,  Chia-Shiung Tsai

IPC: H01L31/102 ,  H01L21/00 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01L31/02164 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/148 ,  H01L51/4273

Abstract: An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

Abstract translation: 一种包括具有阵列区域和黑色电平校正区域的半导体衬底的图像传感器装置。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氧化硅，带负电荷。 第二压应力层含有氮化硅，带负电荷。 在黑色电平校正区域的至少一部分上形成金属屏蔽。 图像传感器装置包括形成在金属屏蔽和第二压缩应力层上的第三压缩应力层。 第三压缩应力层含有氧化硅。 金属屏蔽层的侧壁由第三压应力层保护。

公开(公告)号：US20130329102A1

公开(公告)日：2013-12-12

申请号：US13492258

申请日：2012-06-08

Applicant: Chun-Han TSAO ,  Chih-Yu LAI ,  Chih-Hui HUANG ,  Cheng-Ta WU ,  Yeur-Luen TU ,  Ching-Chun WANG ,  Shyh-Fann TING ,  Chia-Shiung TSAI

Inventor： Chun-Han TSAO ,  Chih-Yu LAI ,  Chih-Hui HUANG ,  Cheng-Ta WU ,  Yeur-Luen TU ,  Ching-Chun WANG ,  Shyh-Fann TING ,  Chia-Shiung TSAI

IPC: H04N5/335

CPC classification number: H01L31/02164 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/148 ,  H01L51/4273

Abstract: An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

Abstract translation: 一种包括具有阵列区域和黑色电平校正区域的半导体衬底的图像传感器装置。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氧化硅，带负电荷。 第二压应力层含有氮化硅，带负电荷。 在黑色电平校正区域的至少一部分上形成金属屏蔽。 图像传感器装置包括形成在金属屏蔽和第二压缩应力层上的第三压缩应力层。 第三压缩应力层含有氧化硅。 金属屏蔽层的侧壁由第三压应力层保护。

公开(公告)号：US20130113061A1

公开(公告)日：2013-05-09

申请号：US13290733

申请日：2011-11-07

Applicant: Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

Inventor： Chih-Yu Lai ,  Yeur-Luen Tu ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Chia-Shiung Tsai ,  Luan C. Tran

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0232

CPC classification number: H01L27/1463 ,  H01L21/02129 ,  H01L21/223 ,  H01L21/2255 ,  H01L21/76224 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/09

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.