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公开(公告)号：US20140042387A1
公开(公告)日：2014-02-13
申请号：US13615548
申请日：2012-09-13
申请人： Chih-Chung Yang , Che-Hao Liao , Shao-Ying Ting , Horng-Shyang Chen , Wen-Ming Chang , Yu-Feng Yao , Chih-Yen Chen , Hao-Tsung Chen
发明人： Chih-Chung Yang , Che-Hao Liao , Shao-Ying Ting , Horng-Shyang Chen , Wen-Ming Chang , Yu-Feng Yao , Chih-Yen Chen , Hao-Tsung Chen
CPC分类号： H01L33/18 , H01L33/08 , H01L33/24 , H01L33/44 , H01L33/502
摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.
摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从与列相邻的一侧逐渐变为远离柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。
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公开(公告)号：US20130285267A1
公开(公告)日：2013-10-31
申请号：US13530104
申请日：2012-06-21
申请人： Chih-Chung Yang , Hung-Yu Tseng , Wei-Fang Chen , Che-Hao Liao , Yu-Feng Yao
发明人： Chih-Chung Yang , Hung-Yu Tseng , Wei-Fang Chen , Che-Hao Liao , Yu-Feng Yao
CPC分类号： B82Y40/00 , B81C99/008
摘要： A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.
摘要翻译： 提供了纳米颗粒的制造方法。 提供具有多个支柱结构的基板，然后形成多个环形结构以围绕多个支柱结构。 每个环结构的内壁围绕每个支柱结构的侧壁。 每个柱结构的一部分被去除以减小每个柱结构的高度并暴露每个环结构的内壁。 环结构与柱结构分离以形成多个纳米颗粒。 在将环结构与衬底上的柱结构分离之前，对环结构进行表面改性。
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公开(公告)号：US20120070922A1
公开(公告)日：2012-03-22
申请号：US13048746
申请日：2011-03-15
申请人： Chih-Chung YANG , Cheng-Hung LIN , Chih-Yen CHEN , Che-Hao LIAO , Chieh HSIEH
发明人： Chih-Chung YANG , Cheng-Hung LIN , Chih-Yen CHEN , Che-Hao LIAO , Chieh HSIEH
CPC分类号： H01L33/0079 , B82Y40/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L33/20
摘要： The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.
摘要翻译： 本发明提供一种形成发光器件的方法。 提供第一基板。 在第一衬底上或在第一衬底上生长的半导体外延层上形成多个图案化掩模，或者蚀刻第一衬底以形成多个沟槽，随后进行外延横向过生长工艺以生长外延层 在第一个底物上。 在外延层上形成发光结构。 在发光结构上形成第一电极层。 发光结构被晶片结合到第二基板。 进行光电化学蚀刻工艺以从外延层剥离第一衬底。
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公开(公告)号：US08759814B2
公开(公告)日：2014-06-24
申请号：US13615548
申请日：2012-09-13
申请人： Chih-Chung Yang , Che-Hao Liao , Shao-Ying Ting , Horng-Shyang Chen , Wen-Ming Chang , Yu-Feng Yao , Chih-Yen Chen , Hao-Tsung Chen
发明人： Chih-Chung Yang , Che-Hao Liao , Shao-Ying Ting , Horng-Shyang Chen , Wen-Ming Chang , Yu-Feng Yao , Chih-Yen Chen , Hao-Tsung Chen
IPC分类号： H01L31/00
CPC分类号： H01L33/18 , H01L33/08 , H01L33/24 , H01L33/44 , H01L33/502
摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.
摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从相邻列的一侧逐渐变为离开立柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。
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公开(公告)号：US08753559B2
公开(公告)日：2014-06-17
申请号：US13530104
申请日：2012-06-21
申请人： Chih-Chung Yang , Hung-Yu Tseng , Wei-Fang Chen , Che-Hao Liao , Yu-Feng Yao
发明人： Chih-Chung Yang , Hung-Yu Tseng , Wei-Fang Chen , Che-Hao Liao , Yu-Feng Yao
CPC分类号： B82Y40/00 , B81C99/008
摘要： A fabrication method of nanoparticles is provided. A substrate having a plurality of pillar structures is provided and then a plurality of ring structures is formed to surround the plurality of the pillar structures. The inner wall of each ring structure surrounds the sidewall of each pillar structure. A portion of each pillar structure is removed to reduce the height of each pillar structure and to expose the inner wall of each ring structure. The ring structures are separated from the pillar structures to form a plurality of nanoparticles. Surface modifications are applied to the ring structures before the ring structures are separated from the pillar structures on the substrate.
摘要翻译： 提供了纳米颗粒的制造方法。 提供具有多个柱结构的基板，然后形成多个环形结构以围绕多个柱结构。 每个环结构的内壁围绕每个支柱结构的侧壁。 每个柱结构的一部分被去除以减小每个柱结构的高度并暴露每个环结构的内壁。 环结构与柱结构分离以形成多个纳米颗粒。 在将环结构与衬底上的柱结构分离之前，对环结构进行表面改性。
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公开(公告)号：US08153457B1
公开(公告)日：2012-04-10
申请号：US13048746
申请日：2011-03-15
申请人： Chih-Chung Yang , Cheng-Hung Lin , Chih-Yen Chen , Che-Hao Liao , Chieh Hsieh
发明人： Chih-Chung Yang , Cheng-Hung Lin , Chih-Yen Chen , Che-Hao Liao , Chieh Hsieh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , B82Y40/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L33/20
摘要： The invention provides a method for forming a light emitting device. A first substrate is provided. A plurality of patterned masks is formed on the first substrate, or on a semiconductor epitaxial layer grown on the first substrate, or the first substrate is etched to form a plurality of trenches, followed by performing an epitaxial lateral overgrowth process to grow an epitaxy layer over the first substrate. A light emitting structure is formed on the epitaxy layer. A first electrode layer is formed on the light emitting structure. The light emitting structure is wafer bonded to a second substrate. A photoelectrochemical etching process is performed to lift off the first substrate from the epitaxy layer.
摘要翻译： 本发明提供一种形成发光器件的方法。 提供第一基板。 在第一衬底上或在第一衬底上生长的半导体外延层上形成多个图案化掩模，或者蚀刻第一衬底以形成多个沟槽，随后进行外延横向过生长工艺以生长外延层 在第一个底物上。 在外延层上形成发光结构。 在发光结构上形成第一电极层。 发光结构被晶片结合到第二基板。 进行光电化学蚀刻工艺以从外延层剥离第一衬底。
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公开(公告)号：US20110175126A1
公开(公告)日：2011-07-21
申请号：US13008702
申请日：2011-01-18
申请人： Hung-Chih YANG , Ming-Chi Hsu , Ta-Cheng Hsu , Chih-Chung Yang , Tsung-Yi Tang , Yung-Sheng Chen , Wen-Yu Shiao , Che-Hao Liao , Yu-Jiun Shen , Sheng-Horng Yen
发明人： Hung-Chih YANG , Ming-Chi Hsu , Ta-Cheng Hsu , Chih-Chung Yang , Tsung-Yi Tang , Yung-Sheng Chen , Wen-Yu Shiao , Che-Hao Liao , Yu-Jiun Shen , Sheng-Horng Yen
IPC分类号： H01L31/0352 , B82Y99/00
摘要： A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.
摘要翻译： 提供了一种发光二极管器件，其包括：衬底，其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构，所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层，其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm，并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。
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公开(公告)号：US20130256650A1
公开(公告)日：2013-10-03
申请号：US13481856
申请日：2012-05-27
申请人： Chih-Chung Yang , Horng-Shyang Chen , Shao-Ying Ting , Che-Hao Liao , Chih-Yen Chen , Chieh Hsieh , Hao-Tsung Chen , Yu-Feng Yao , Dong-Ming Yeh
发明人： Chih-Chung Yang , Horng-Shyang Chen , Shao-Ying Ting , Che-Hao Liao , Chih-Yen Chen , Chieh Hsieh , Hao-Tsung Chen , Yu-Feng Yao , Dong-Ming Yeh
CPC分类号： H01L33/025 , H01L33/22 , H01L33/382 , H01L2933/0091
摘要： A semiconductor device and fabrication method thereof are provided, wherein the fabrication method of the semiconductor device includes the following steps. Forming a semiconductor layer on a substrate, wherein the semiconductor layer has a top surface and a bottom surface that is opposite to the top surface. The bottom surface is in contact with the substrate, and the top surface has a plurality of pits, the pits are extended from the top surface toward the bottom surface. Preparing a solution, wherein the solution includes a plurality of nanoparticles. Filling the nanoparticles into the pits. Forming a conducting layer on the semiconductor layer after filling the nanoparticles into the pits.
摘要翻译： 提供了半导体器件及其制造方法，其中半导体器件的制造方法包括以下步骤。 在基板上形成半导体层，其中半导体层具有与顶表面相对的顶表面和底表面。 底表面与基底接触，并且顶表面具有多个凹坑，凹坑从顶表面向底表面延伸。 制备溶液，其中溶液包括多个纳米颗粒。 将纳米颗粒填充到凹坑中。 在将纳米颗粒填充到凹坑中之后，在半导体层上形成导电层。
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