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    LIGHT EMITTING DIODE STRUCTURE
    2.
    发明申请
    LIGHT EMITTING DIODE STRUCTURE 有权
    发光二极管结构

    公开(公告)号：US20150021639A1

    公开(公告)日：2015-01-22

    申请号：US14019553

    申请日：2013-09-06

    申请人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

    发明人： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

    IPC分类号： H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/42

    摘要： A light emitting diode structure including a substrate, a semiconductor epitaxial layer and a reflective conductive structure layer is provided. The semiconductor epitaxial layer is disposed on the substrate and exposes a portion of the substrate. The reflective conductive structure layer covers a part of the semiconductor epitaxial layer and the portion of the substrate exposed by the semiconductor epitaxial layer.

    摘要翻译： 提供了包括衬底，半导体外延层和反射导电结构层的发光二极管结构。 半导体外延层设置在衬底上并暴露衬底的一部分。 反射导电结构层覆盖半导体外延层的一部分和由半导体外延层曝光的基板的部分。

    LIGHT EMITTING DEVICE
    3.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20140307442A1

    公开(公告)日：2014-10-16

    申请号：US13950305

    申请日：2013-07-25

    申请人： Shao-Ying Ting

    发明人： Shao-Ying Ting

    IPC分类号： F21K99/00

    CPC分类号： F21K9/232 ,  F21K9/64 ,  F21K9/65

    摘要： A light emitting device includes a light emitting diode (LED) module and a rotatable wavelength converting structure. The LED module includes a substrate and a plurality of LED chips. The LED chips are disposed on the substrate, and each of the LED chips has a light emitting surface. The rotatable wavelength converting structure is disposed on the LED module and has a plurality of wavelength converting blocks with at least two different colors. Each of the LED chips at least corresponds to one wavelength converting block. The wavelength converting blocks are disposed on the light emitting surfaces of the LED chips. The rotatable wavelength converting structure rotates relative to the LED module so as to change the wavelength converting blocks that the LED chips correspond to.

    摘要翻译： 发光器件包括发光二极管（LED）模块和可旋转波长转换结构。 LED模块包括基板和多个LED芯片。 LED芯片设置在基板上，并且每个LED芯片都具有发光表面。 可旋转的波长转换结构设置在LED模块上并且具有至少两种不同颜色的多个波长转换块。 每个LED芯片至少对应于一个波长转换块。 波长转换块设置在LED芯片的发光表面上。 可旋转波长转换结构相对于LED模块旋转，以便改变LED芯片对应的波长转换块。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140042387A1

    公开(公告)日：2014-02-13

    申请号：US13615548

    申请日：2012-09-13

    申请人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

    发明人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

    IPC分类号： H01L33/04 ,  H01L33/44

    CPC分类号： H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502

    摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

    摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从与列相邻的一侧逐渐变为远离柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。

    LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20140307429A1

    公开(公告)日：2014-10-16

    申请号：US14225455

    申请日：2014-03-26

    申请人： Shao-Ying Ting

    发明人： Shao-Ying Ting

    IPC分类号： F21K99/00

    CPC分类号： F21V3/06 ,  F21K9/232 ,  F21K9/60 ,  F21K9/61 ,  F21Y2115/10

    摘要： A light emitting device includes a base, a light guiding lamp cover, a light-emitting diode (LED) module and a wavelength converting structure. The light guiding lamp cover is disposed on the base and an accommodating space is defined by the light guiding lamp cover and the base together. The light guiding lamp cover has an inner surface, an outer surface and a bottom surface connecting the inner surface and the outer surface. A curvature of the inner surface is greater than a curvature of the outer surface. The LED module is disposed on the base and located inside the accommodating space. The wavelength converting structure is disposed on the LED module and located inside the accommodating space.

    摘要翻译： 发光器件包括基底，导光灯罩，发光二极管（LED）模块和波长转换结构。 导光灯盖设置在基座上，并且由导光灯盖和基座一起限定容纳空间。 导光灯罩具有连接内表面和外表面的内表面，外表面和底表面。 内表面的曲率大于外表面的曲率。 LED模块设置在基座上并位于容纳空间内。 波长转换结构设置在LED模块上并位于容纳空间内。

    Semiconductor light-emitting device and manufacturing method thereof
    7.
    发明授权
    Semiconductor light-emitting device and manufacturing method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US08759814B2

    公开(公告)日：2014-06-24

    申请号：US13615548

    申请日：2012-09-13

    申请人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

    发明人： Chih-Chung Yang ,  Che-Hao Liao ,  Shao-Ying Ting ,  Horng-Shyang Chen ,  Wen-Ming Chang ,  Yu-Feng Yao ,  Chih-Yen Chen ,  Hao-Tsung Chen

    IPC分类号： H01L31/00

    CPC分类号： H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502

    摘要： A semiconductor light-emitting device and a manufacturing method thereof are provided, wherein the semiconductor light-emitting device includes a first type doped semiconductor structure, a light-emitting layer, a second type doped semiconductor layer, a first conductive layer and a dielectric layer. The first type doped semiconductor structure includes a base and a plurality of columns extending outward from the base. Each of the columns includes a top surface and a plurality of sidewall surfaces. The light-emitting layer is disposed on the sidewall surfaces and the top surface, wherein the surface area of the light-emitting layer gradually changes from one side adjacent to the columns to a side away from the columns. The dielectric layer exposes the first conductive layer locating on the top surface of each of the columns, wherein the dielectric layer includes at least one of a plurality of quantum dots, phosphors, and metal nanoparticles.

    摘要翻译： 提供一种半导体发光器件及其制造方法，其中半导体发光器件包括第一掺杂半导体结构，发光层，第二掺杂半导体层，第一导电层和介电层 。 第一类型掺杂半导体结构包括从基底向外延伸的基部和多个列。 每个柱包括顶表面和多个侧壁表面。 发光层设置在侧壁表面和顶表面上，其中发光层的表面积从相邻列的一侧逐渐变为离开立柱的一侧。 电介质层暴露位于每个列的顶表面上的第一导电层，其中介电层包括多个量子点，磷光体和金属纳米颗粒中的至少一个。