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    Overhead aircraft luggage bin with safety mechanism
    3.
    发明授权
    Overhead aircraft luggage bin with safety mechanism 失效
    架空飞机行李箱带安全机构

    公开(公告)号：US5988565A

    公开(公告)日：1999-11-23

    申请号：US30215

    申请日：1998-02-25

    Applicant: Benjamin Hall Thomas ,  Calvin Mackie

    Inventor： Benjamin Hall Thomas ,  Calvin Mackie

    IPC: B64D11/00

    CPC classification number: B64D11/003

    Abstract: A safety mechanism for an overhead aircraft luggage bin for preventing baggage from falling from the bin when the door cover of the bin is opened. The safety mechanism includes a roll-up screen mounted on the door cover which cooperates with a latch mounted on the lower edge of the opening to the bin. The latch and roll-up screen mechanism are operatively associated whereby when the door cover is in covered or closed position, the screen is rolled up and latched to the latch. When the door cover is moved to the uncovered position the screen is unrolled and covers the opening to the bin to prevent any luggage from falling from the housing. The screen can be unlatched so as to remove the screen from the opening.

    Abstract translation: 一种架空飞机行李箱的安全机构，用于防止在打开箱的门盖时行李从箱中掉落。 安全机构包括安装在门盖上的卷起筛，其与安装在通向箱的开口的下边缘上的闩锁配合。 闩锁和卷绕屏幕机构可操作地相关联，由此当门盖处于被遮盖或关闭位置时，屏幕被卷起并锁定到锁闩。 当门盖移动到未覆盖位置时，屏幕展开并覆盖到箱子的开口，以防止任何行李从壳体掉落。 屏幕可以解锁，以便从开口中移除屏幕。

    Orthopedic Device For Use With An Orthopedic Cast
    5.
    发明申请
    Orthopedic Device For Use With An Orthopedic Cast 审中-公开
    矫形矫形器用于矫形外科手术

    公开(公告)号：US20140330185A1

    公开(公告)日：2014-11-06

    申请号：US14270009

    申请日：2014-05-05

    Applicant: Mohammad Taslim ,  Benjamin Hall ,  Zubin Joy ,  Bhavik Raval ,  Justin Tufariello ,  Lawrence Wong ,  Melissa Davis

    Inventor： Mohammad Taslim ,  Benjamin Hall ,  Zubin Joy ,  Bhavik Raval ,  Justin Tufariello ,  Lawrence Wong ,  Melissa Davis

    IPC: A61F5/058

    CPC classification number: A61F5/05816 ,  A61F13/041 ,  A61F13/046

    Abstract: The present invention is generally directed to an orthopedic device for use with an orthopedic cast, which can alleviate the itching sensation that can develop when a patient wears a cast, among other advantages, such as cooling the skin below the cast, reducing the moisture in the region between the skin and the cast, as well as in some cases reducing the risk of infection. As discussed in more detail below, the orthopedic device can include a sleeve that can be mounted onto a body part, e.g., a broken limb, between the skin and a surgical cast. The sleeve is sufficiently flexible so as to substantially conform to the contour of the body part. The sleeve includes a plurality of internal channels for receiving a gas from an external source, e.g., a canister of pressurized gas, and for delivering at least a portion of the received gas via a plurality of openings onto the skin below the cast. The sleeve can include a two opposed layers between which the internal channels are formed.

    Abstract translation: 本发明总体上涉及一种用于整形外科的整形外科装置，其可以减轻当患者穿着铸件时可能发展的瘙痒感，以及其它优点，例如冷却铸件下面的皮肤，减少水分 皮肤和铸件之间的区域，以及在某些情况下降低感染的风险。 如下面更详细讨论的那样，整形外科装置可以包括可以在皮肤和外科手术套之间安装到身体部分（例如破碎的肢体）上的套筒。 套筒具有足够的柔性，从而基本上符合身体部位的轮廓。 套筒包括多个内部通道，用于从外部源（例如，加压气体罐）接收气体，并且用于经由多个开口将接收到的气体的至少一部分输送到铸件下面的皮肤上。 套筒可以包括形成内部通道的两个相对的层。

    Semiconductor array tester
    6.
    发明申请
    Semiconductor array tester 有权
    半导体阵列测试仪

    公开(公告)号：US20050128469A1

    公开(公告)日：2005-06-16

    申请号：US10733903

    申请日：2003-12-11

    Applicant: Benjamin Hall ,  Martin Hu ,  Mike White ,  Chung-En Zah

    Inventor： Benjamin Hall ,  Martin Hu ,  Mike White ,  Chung-En Zah

    IPC: G01N21/21 ,  G01N21/62 ,  G01N21/95 ,  G02B27/28 ,  H01S5/00 ,  H01S5/40 ,  H01S5/50 ,  G01N21/88

    CPC classification number: G01N21/21 ,  H01S5/0014 ,  H01S5/4025 ,  H01S5/4031

    Abstract: An array tester (10) characterizes individual ones (111) of a semiconductor devices of an array (11) based on polarization-resolving an optical far-field measurement of the individual chips (111) as a function of angular position. Two pairs of TM and TE detectors (41a-b and 42a-b) or one pair displaceable by ninety degrees, move in vertical and horizontal arc paths or fixed around a fixed position of a selected device of an array to sample the far-fields.

    Abstract translation: 阵列测试器（10）通过基于偏振分辨作为角位置的函数的各个芯片（111）的光学远场测量来表征阵列（11）的半导体器件的各个（111）。 两对TM和TE检测器（41 a-b和42 a-b）或一对可移位九十度的对在垂直和水平弧形路径上移动或固定在阵列的选定器件的固定位置，以对远场进行采样。

    Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
    9.
    发明申请
    Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom 有权

    公开(公告)号：US20060056475A1

    公开(公告)日：2006-03-16

    申请号：US10944649

    申请日：2004-09-16

    Applicant: Catherine Caneau ,  Benjamin Hall ,  Nobuhiko Nishiyama ,  Chung-En Zah

    Inventor： Catherine Caneau ,  Benjamin Hall ,  Nobuhiko Nishiyama ,  Chung-En Zah

    IPC: H01S5/00

    CPC classification number: H01S5/183 ,  B82Y20/00 ,  H01S5/34306 ,  H01S5/34313

    Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96. The manufacture of the high index layers with such a band gap creates a sufficient difference in the indices of refraction of the alternating layers in the DBR, while keeping optical absorption low to maintain the reflectivity at least up to the desired maximum temperature, and obviates the need for using a DBR either bonded to the InP substrate, or grown metamorphically on it.

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