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1.
公开(公告)号:US11851326B2
公开(公告)日:2023-12-26
申请号:US17660687
申请日:2022-04-26
申请人: BNNano, Inc.
CPC分类号: C01B21/0648 , C30B25/14 , C30B25/165 , C30B29/403 , C30B29/602 , B82Y30/00 , B82Y40/00 , C01P2002/76 , C01P2004/04 , C01P2004/13 , C01P2004/50 , C01P2004/84
摘要: A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.
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2.
公开(公告)号:US20220242730A1
公开(公告)日:2022-08-04
申请号:US17660687
申请日:2022-04-26
申请人: BNNano, Inc.
IPC分类号: C01B21/064 , C30B25/14 , C30B25/16 , C30B29/40 , C30B29/60
摘要: A composition (or an aggregate) comprising a h-BN/BNNT structure that comprises a boron nitride nanotube structure and at least a first hexagonal boron nitride structure. Also, a composition comprising at least a first epitaxial h-BN/BNNT structure and at least one metal adhered to the first epitaxial h-BN/BNNT structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a material comprising at least a first hexagonal boron nitride structure and at least a first boron nitride nanotube structure, wherein atoms in the first hexagonal boron nitride structure are epitaxially aligned with atoms in the first boron nitride nanotube structure that are closest to the first hexagonal boron nitride structure.
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3.
公开(公告)号:US11332369B2
公开(公告)日:2022-05-17
申请号:US15928969
申请日:2018-03-22
申请人: BNNano, Inc.
摘要: A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
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4.
公开(公告)号:US20190292051A1
公开(公告)日:2019-09-26
申请号:US15928969
申请日:2018-03-22
申请人: BNNano, Inc.
IPC分类号: C01B21/064 , C30B25/14 , C30B25/16 , C30B29/40 , C30B29/60
摘要: A composition (or an aggregate) comprising an epitaxial h-BN/BNNT structure that comprises a hexagonal boron nitride structure that is epitaxial with respect to a boron nitride nanotube structure. Also, a composition (or an aggregate) that comprises independent boron nitride nanotubes, in which a total mass percentage of independent hexagonal boron nitride and residual boron in the composition is not more than 35%. Also, a composition (or an aggregate) in which not more than 1% of independent boron nitride nanotubes and boron nitride nanotube structures have a dixie cup or bamboo defect. Also, a composition in which at least 50% of independent boron nitride nanotubes and boron nitride nanotube structures are single-wall. Also, a method of making a composition that comprises epitaxial h-BN/BNNT structures.
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