-
公开(公告)号：US08389999B2
公开(公告)日：2013-03-05
申请号：US12892370
申请日：2010-09-28
申请人： Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
发明人： Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
IPC分类号： H01L29/04
CPC分类号： H01L21/3221
摘要： A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
摘要翻译： 提供了具有降低的位错密度的结晶材料结构及其制备方法。 结晶材料结构在高于结晶材料结构的脆性 - 延性转变温度的温度下进行退火。 在结晶材料结构上形成一个或多个应力元件，以消除位错或将其移动到较不有害的位置。
-
公开(公告)号：US07763095B2
公开(公告)日：2010-07-27
申请号：US11447223
申请日：2006-06-05
申请人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Mathew A. Marcus , Eicke R. Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Mathew A. Marcus , Eicke R. Weber
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
-
公开(公告)号：US08450704B2
公开(公告)日：2013-05-28
申请号：US12959795
申请日：2010-12-03
IPC分类号： A61N5/00
CPC分类号： C30B30/06 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
摘要翻译： 提供了一种修改半导体材料中位错分布的系统。 该系统包括一个或多个振动源，用于产生具有声子频率的振动模式的至少一个激励，以便增强通过晶格的位错运动。
-
公开(公告)号：US20110136348A1
公开(公告)日：2011-06-09
申请号：US12959795
申请日：2010-12-03
CPC分类号： C30B30/06 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： A system for modifying dislocation distributions in semiconductor materials is provided. The system includes one or more vibrational sources for producing at least one excitation of vibrational mode having phonon frequencies so as to enhance dislocation motion through a crystal lattice.
摘要翻译： 提供了一种修改半导体材料中位错分布的系统。 该系统包括一个或多个振动源，用于产生具有声子频率的振动模式的至少一个激励，以便增强通过晶格的位错运动。
-
公开(公告)号：US20110073869A1
公开(公告)日：2011-03-31
申请号：US12892370
申请日：2010-09-28
申请人： Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
发明人： Anthony Buonassisi , Mariana Bertoni , Ali Argon , Sergio Castellanos , Alexandria Fecych , Douglas Powell , Michelle Vogl
IPC分类号： H01L29/36 , H01L21/322
CPC分类号： H01L21/3221
摘要： A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
摘要翻译： 提供了具有降低的位错密度的结晶材料结构及其制备方法。 结晶材料结构在高于结晶材料结构的脆性 - 延性转变温度的温度下进行退火。 在结晶材料结构上形成一个或多个应力元件，以消除位错或将其移动到较不有害的位置。
-
公开(公告)号：US20100213406A1
公开(公告)日：2010-08-26
申请号：US12798956
申请日：2010-04-14
申请人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Matthew A. Marcus , Eicke R. Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei A. Istratov , Matthew D. Pickett , Matthew A. Marcus , Eicke R. Weber
IPC分类号： H01J7/18
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
摘要翻译： 本发明涉及通过金属合金簇对半导体中杂质的内部吸杂。 特别地，在硅中形成金属间簇，这种簇包含两个或多个过渡金属物质。 这样的簇具有低于主体材料的熔融温度，并且显示出在吸收硅中的杂质并将其收集到隔离的，较不有害的位置中是特别有效的。 还描述了一些金属合金簇的新型组合物。
-
公开(公告)号：US20060289091A1
公开(公告)日：2006-12-28
申请号：US11447223
申请日：2006-06-05
申请人： Anthony Buonassisi , Matthias Heuer , Andrei Istratov , Matthew Pickett , Mathew Marcus , Eicke Weber
发明人： Anthony Buonassisi , Matthias Heuer , Andrei Istratov , Matthew Pickett , Mathew Marcus , Eicke Weber
IPC分类号： C22C19/03
CPC分类号： H01L31/186 , H01L21/3225 , H01L31/028 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.
摘要翻译： 本发明涉及通过金属合金簇对半导体中杂质的内部吸杂。 特别地，在硅中形成金属间簇，这种簇包含两个或多个过渡金属物质。 这样的簇具有低于主体材料的熔融温度，并且显示出在吸收硅中的杂质并将其收集到隔离的，较不有害的位置中是特别有效的。 还描述了一些金属合金簇的新型组合物。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.016 秒)
