公开(公告)号：US5234535A

公开(公告)日：1993-08-10

申请号：US988655

申请日：1992-12-10

申请人： Klaus D. Beyer ,  Louis L. Hsu ,  Victor J. Silvestri ,  Andrie S. Yapsir

发明人： Klaus D. Beyer ,  Louis L. Hsu ,  Victor J. Silvestri ,  Andrie S. Yapsir

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/76251 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S438/981

摘要： A method of forming a thin silicon SOI layer by wafer bonding, the thin silicon SOI layer being substantially free of defects upon which semiconductor structures can be subsequently formed, is disclosed. The method comprises the steps of:a) providing a first wafer comprising a silicon substrate of a first conductivity type, a diffusion layer of a second conductivity type formed thereon and having a first etch characteristic, a thin epitaxial layer of the second conductivity type formed upon the diffusion layer and having a second etch characteristic different from the first etch characteristic of the diffusion layer, and a thin oxide layer formed upon the thin epitaxial layer;b) providing a second wafer comprising a silicon substrate having a thin oxide layer formed on a surface thereof;c) wafer bonding said first wafer to said second wafer;d) removing the silicon substrate of said first wafer in a controlled mechanical manner; ande) removing the diffusion layer of said first wafer using a selective dry low energy plasma process to expose the underlying thin epitaxial layer, the selective dry low energy plasma process providing an etch ratio of the first etch characteristic to the second etch characteristic such that the diffusion layer is removed with minimal formation of any shallow plasma radiation damage to the exposed underlying thin epitaxial layer.

公开(公告)号：US5232866A

公开(公告)日：1993-08-03

申请号：US781437

申请日：1991-10-23

申请人： Klaus D. Beyer ,  Victor J. Silvestri ,  Andrie S. Yapsir

发明人： Klaus D. Beyer ,  Victor J. Silvestri ,  Andrie S. Yapsir

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L21/768 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/764 ,  H01L21/7682

摘要： A method for isolating a film from a substrate 50 includes the steps of: providing an N+ layer 52 on the substrate 50; forming an insulation layer 54 onto the N+ doped layer 52; etching a pair of trenches 56, 58 through the insulation layer 52 to thereby form an isolation region 60 of insulation material; laterally etching a cavity 62 underneath the isolation region; and, forming a film 64 onto the isolation region.

公开(公告)号：US5391911A

公开(公告)日：1995-02-21

申请号：US231100

申请日：1994-04-22

申请人： Klaus D. Beyer ,  Andrie S. Yapsir

发明人： Klaus D. Beyer ,  Andrie S. Yapsir

IPC分类号： H01L21/764 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L27/04

CPC分类号： H01L21/76264 ,  H01L21/76289 ,  Y10S148/05 ,  Y10S148/164

摘要： A method and the resulting product for isolating lightly doped silicon islands from each other and from a common substrate. The substrate is covered with a first heavily doped epi layer. The first layer is covered with a lightly doped second epi layer. A pair of spaced deep trenches are provided which extend from the top surface of the second layer, through the first layer and into the substrate. The interior walls of the trenches are lined with oxide. A pair of heavily doped reach-through diffusions extending from said top surface to the first layer is oriented perpendicularly to the deep trenches and fully extends between the trenches. The heavily doped reach-through diffusions and the contiguous first layer are removed by a single anisotropic etching step to yield silicon islands isolated by air except where the islands contact the oxide-lined deep trenches. The air isolation preferably is partially replaced with other dielectric material.

摘要翻译： 一种方法和所得到的产品，用于将共同的衬底彼此分离轻掺杂的硅岛。 衬底被第一重掺杂外延层覆盖。 第一层被轻掺杂的第二外延层覆盖。 提供一对间隔的深沟槽，其从第二层的顶表面延伸穿过第一层并进入衬底。 沟槽的内壁衬有氧化物。 从所述顶表面延伸到第一层的一对重掺杂的贯穿扩散层垂直于深沟槽定向并在沟槽之间完全延伸。 通过单个各向异性蚀刻步骤去除重掺杂的通孔扩散和相邻的第一层，以产生除空气与氧化物衬里的深沟槽接触的空气，由空气隔离。 空气隔离优选地部分地被其它介电材料替代。

公开(公告)号：US5227658A

公开(公告)日：1993-07-13

申请号：US781429

申请日：1991-10-23

申请人： Klaus D. Beyer ,  San-Mei Ku ,  Victor J. Silvestri ,  Andrie S. Yapsir

发明人： Klaus D. Beyer ,  San-Mei Ku ,  Victor J. Silvestri ,  Andrie S. Yapsir

IPC分类号： H01L21/76 ,  H01L21/764 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/764

摘要： A method for isolating areas of silicon from a substrate 50 includes the steps of: providing a buried N+ region 52 in the substrate; forming an intrinsic epitaxial layer 12 onto the N+ region; etching trenches 18, 20 through the intrinsic epitaxial layer to thereby form a desired isolation region 16 of intrinsic epitaxial material; laterally etching a cavity 22 underneath the desired isolation region; and, forming an insulation layer 24 of insulation material along the bottom of the desired isolation region exposed by the former etching steps.

公开(公告)号：US5394294A

公开(公告)日：1995-02-28

申请号：US992185

申请日：1992-12-17

申请人： Shaw-Ning Mei ,  Dominic J. Schepis ,  Andrie S. Yapsir

发明人： Shaw-Ning Mei ,  Dominic J. Schepis ,  Andrie S. Yapsir

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/08 ,  H01G1/11

CPC分类号： H01L27/0805 ,  H01L27/0218

摘要： An integrated circuit decoupling capacitor is divided into a plurality of discrete segments. The segments are connected electrically in parallel and are redundant to an extent that if one segment (or if desired more than one segment) fails, the remaining segments have sufficient capacitance to provide the required decoupling function. Each decoupling capacitor segment has a fuse connected in series with it. The fuse opens in response to a fault in a decoupling capacitor segment that would otherwise cause that segment to short the power supply to ground.

摘要翻译： 集成电路去耦电容器被分成多个离散段。 这些段并联电连接并且是冗余的，如果一个段（或者如果期望的多于一个段）失败，则剩余段具有足够的电容以提供所需的解耦功能。 每个去耦电容器段具有与其串联的保险丝。 保险丝响应于去耦电容器段中的故障而断开，否则将导致该段将电源短路到地。

公开(公告)号：US5306659A

公开(公告)日：1994-04-26

申请号：US37855

申请日：1993-03-29

申请人： Klaus D. Beyer ,  Andrie S. Yapsir

发明人： Klaus D. Beyer ,  Andrie S. Yapsir

IPC分类号： H01L21/764 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76264 ,  H01L21/76289 ,  Y10S148/05 ,  Y10S148/164

摘要： A method and the resulting product for isolating lightly doped silicon islands from each other and from a common substrate. The substrate is covered with a first heavily doped epi layer. The first layer is covered with a lightly doped second epi layer. A pair of spaced deep trenches are provided which extend from the top surface of the second layer, through the first layer and into the substrate. The interior walls of the trenches are lined with oxide. A pair of heavily doped reach-through diffusions extending from said top surface to the first layer is oriented perpendicularly to the deep trenches and fully extends between the trenches. The heavily doped reach-through diffusions and the contiguous first layer are removed by a single anisotropic etching step to yield silicon islands isolated by air except where the islands contact the oxide-lined deep trenches. The air isolation preferably is partially replaced with other dielectric material.

摘要翻译： 一种方法和所得到的产品，用于将共同的衬底彼此分离轻掺杂的硅岛。 衬底被第一重掺杂外延层覆盖。 第一层被轻掺杂的第二外延层覆盖。 提供一对间隔的深沟槽，其从第二层的顶表面延伸穿过第一层并进入衬底。 沟槽的内壁衬有氧化物。 从所述顶表面延伸到第一层的一对重掺杂的贯穿扩散层垂直于深沟槽定向并在沟槽之间完全延伸。 通过单个各向异性蚀刻步骤去除重掺杂的通孔扩散和相邻的第一层，以产生除空气与氧化物衬里的深沟槽接触的空气，由空气隔离。 空气隔离优选地部分地被其它介电材料替代。