公开(公告)号：US20170275762A1

公开(公告)日：2017-09-28

申请号：US14882401

申请日：2015-10-13

申请人： ASCEN TOOL INC

发明人： George Xinsheng Guo

IPC分类号： C23C16/54 ,  C23C14/34 ,  C23C14/35 ,  H01J37/32

CPC分类号： C23C16/54 ,  C23C14/3407 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  H01J37/3244 ,  H01J37/32743 ,  H01J37/3402 ,  H01J37/3417 ,  H01J37/3423 ,  H01J37/3438

摘要： The present application discloses a new type of deposition source, where individual sources are placed in a substantial closed loop. The closed polygon deposition sources have no end in circumference and enable better deposition uniformity. A closed loop deposition sources minimize the edge effects in sputtering, chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD) and increase deposition material utilization.