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公开(公告)号:US12131950B2
公开(公告)日:2024-10-29
申请号:US18542779
申请日:2023-12-18
申请人: SK hynix Inc.
发明人: Jae Man Yoon , Jin Hwan Jeon , Tae Kyun Kim , Jung Woo Park , Su Ock Chung , Jae Won Ha
IPC分类号: H01L21/76 , H01L21/768 , H10B12/00
CPC分类号: H01L21/76897 , H01L21/76831 , H10B12/0335 , H10B12/482
摘要: A semiconductor device and a method of fabricating the same are provided. According to the present invention, a semiconductor device comprises an active region formed in a substrate, and including flat surfaces and hole-shaped recess portions; upper-level plugs disposed over the flat surfaces; a spacer disposed between the upper-level plugs and providing a trench exposing the hole-shaped recess portions; a lower-level plug filling the hole-shaped recess portions; and a buried conductive line disposed over the lower-level plug and partially filling the trench.
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公开(公告)号:US12126200B2
公开(公告)日:2024-10-22
申请号:US18405055
申请日:2024-01-05
申请人: SK On Co., Ltd.
发明人: Chang Mook Hwang , Gyeong Min Ryu , Hyun Ji Kim , Ha Neul Song
CPC分类号: H02J7/0044 , H02J7/0013 , H02J7/0047 , H05K7/20909
摘要: The present disclosure relates to an apparatus for charging and discharging, comprising: a case; a first chamber and a second chamber positioned in the case along width direction of the case and configured to accommodate a first battery cell and a second battery cell respectively; a module chamber positioned inside the case and outside the first chamber and the second chamber; a charging/discharging module portion positioned in the module chamber and charging and discharging the first battery cell and the second battery cell; a module hole formed through one face of the case to communicate the module chamber with the outside of the case; and an air treatment portion provided inside the case to supply air to the module chamber at a temperature lower than an external temperature, which is a temperature outside the case.
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公开(公告)号:US12126102B2
公开(公告)日:2024-10-22
申请号:US17607009
申请日:2020-12-26
发明人: Peng Zhou
CPC分类号: H01R12/61 , G06F3/0412 , H10K59/40 , H10K77/111 , G06F3/0446
摘要: A flexible circuit board includes a first substrate, display panel signal traces, a touch chip, at least one second substrate, a touch auxiliary device, first touch signal traces and at least one second touch signal trace. The display panel signal traces, the touch chip and the at least one second substrate are located on the same side of the first substrate; and the touch auxiliary device is located on a second substrate. The first touch signal trace includes a first connection trace and a first transfer trace that are electrically connected to each other. The second touch signal trace includes a second connection trace and a second transfer trace that are electrically connected to each other. The first connection trace and the second connection trace are disposed on the first substrate, and the first transfer trace and the second transfer trace are disposed on the at least one second substrate.
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公开(公告)号:US12124718B2
公开(公告)日:2024-10-22
申请号:US17470531
申请日:2021-09-09
申请人: SK hynix Inc.
发明人: Heung Tae Jin
IPC分类号: G06F3/06
CPC分类号: G06F3/0635 , G06F3/0619 , G06F3/0659 , G06F3/0673
摘要: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, a memory system may store, for each of the plurality of memory dies, a program fail count indicating a cumulative number of occurrences of a program fail during a program operation for each memory die, and may change, for a target memory die among the plurality of memory dies, a first operation parameter among operation parameters applied to the target memory die when executing a program operation on the target memory die, based on a target program fail count which is the program fail count for the target memory die.
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公开(公告)号:US12124397B2
公开(公告)日:2024-10-22
申请号:US18173791
申请日:2023-02-24
申请人: SK hynix Inc.
发明人: Hong Ki Moon , Seok Bo Shim
IPC分类号: G06F13/42
CPC分类号: G06F13/4221
摘要: The present technology may include a first latch circuit configured to store, as first data, data that is transmitted through a first signal line, a second latch circuit configured to store, as a plurality of second data, the data that is transmitted through the first signal line by sorting the data by a plurality of second signal lines that are connected to the first signal line in common, and a data bus inversion engine configured to selectively perform a first mode in which the data bus inversion engine generates a data bus inversion flag by comparing the first data with current input data and a second mode in which the data bus inversion engine generates the data bus inversion flag by comparing the plurality of second data with the current input data.
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公开(公告)号:US12122013B2
公开(公告)日:2024-10-22
申请号:US17077360
申请日:2020-10-22
申请人: SK enpulse Co., Ltd.
发明人: Jong Wook Yun , Jang Won Seo , Hyeyoung Heo , Eun Sun Joeng
CPC分类号: B24B37/24 , B24B37/22 , B24B37/26 , C08G18/10 , C08G18/72 , C08G18/3203 , C08K5/12 , C08K5/18
摘要: The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.
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公开(公告)号:US12111687B2
公开(公告)日:2024-10-08
申请号:US16913366
申请日:2020-06-26
发明人: Sunhwan Kim , Jung Hee Ki , Han Jun Kim , Dae Seong Oh , Jin Woo Lee , Sang Hun Choi
IPC分类号: G06F1/16 , B29C48/00 , B29C48/91 , B29C55/00 , B29C55/08 , C08G73/14 , G02B1/04 , G02B1/14 , B29K77/00
CPC分类号: G06F1/1609 , B29C48/0018 , B29C48/91 , B29C55/005 , B29C55/08 , C08G73/14 , G02B1/04 , G02B1/14 , B29K2077/00 , B29K2995/0018 , B29K2995/0069 , C08J2377/10 , C08J2379/08
摘要: Embodiments relate to a base film that is colorless, transparent, and excellent in mechanical properties and optical properties, particularly with low moisture permeability, a process for preparing the same, and a cover window and a display device comprising the same. The cover window comprises a base film comprising a polyamide-based polymer and having a moisture permeability of 300 g/m2·day or less; and a functional layer.
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公开(公告)号:US12107256B2
公开(公告)日:2024-10-01
申请号:US18093215
申请日:2023-01-04
申请人: SK ON CO., LTD.
发明人: Sang Min Park , Tae Kyoung Lee , Sang Bok Kim , Jik Soo Kim , Sang Hye Shin , Yu Na Shim , Jeong Bae Yoon
IPC分类号: H01M4/131 , H01M4/04 , H01M4/133 , H01M4/1391 , H01M4/1393 , H01M4/525 , H01M10/0525
CPC分类号: H01M4/131 , H01M4/0471 , H01M4/133 , H01M4/1391 , H01M4/1393 , H01M4/525 , H01M10/0525
摘要: The cathode active material for a lithium secondary battery according to embodiments of the present invention includes lithium-transition metal composite oxide particles including a plurality of primary particles, and the lithium-transition metal composite oxide particles have a lithium-potassium-containing portion formed between the primary particles. Thereby, it is possible to improve life-span properties and capacity properties by preventing the layer structure deformation of the primary particles and removing residual lithium.
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公开(公告)号:US12107235B2
公开(公告)日:2024-10-01
申请号:US17740778
申请日:2022-05-10
发明人: Lingcong Li , Fei Chen , Shanghui Tao , Ji Yang , Rukun Yang , Xueke Wu
IPC分类号: B65H75/24 , B65H54/70 , H01M10/0587 , H01M10/052
CPC分类号: H01M10/0587 , B65H54/707 , H01M10/052
摘要: A variable-diameter adsorption winding needle mechanism and a winding machine are provided. The variable-diameter adsorption winding needle mechanism includes a winding needle assembly, a first adsorption winding needle, a second adsorption winding needle and a pin assembly. A plurality of adsorption holes are provided on the outer peripheral surfaces of the first adsorption winding needle and the second adsorption winding needle. At the same time, the winding needle assembly is also used to drive, under the driving of the pin assembly, the first adsorption winding needle and the second adsorption winding needle to move close to or away from each other.
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公开(公告)号:US12106904B2
公开(公告)日:2024-10-01
申请号:US17860367
申请日:2022-07-08
申请人: SK hynix Inc.
发明人: Se-Hun Kang , Han-Joon Kim , Ki-Vin Im
CPC分类号: H01G4/10 , H01L28/40 , H01L29/517 , H10B12/30
摘要: A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.
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