知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

3690 records (took 0.054 seconds)

    CAPACITOR FOR DYNAMIC RANDOM ACCESS MEMORY, DRAM INCLUDING THE SAME AND METHODS OF FABRICATING THEREOF
    941.
    发明申请
    CAPACITOR FOR DYNAMIC RANDOM ACCESS MEMORY, DRAM INCLUDING THE SAME AND METHODS OF FABRICATING THEREOF 有权

    公开(公告)号：US20220246716A1

    公开(公告)日：2022-08-04

    申请号：US17591381

    申请日：2022-02-02

    Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

    Inventor： Hyunsoo JIN ,  Byung Jin CHO ,  Seongho KIM

    IPC: H01L49/02 ,  H01L27/108 ,  H01G4/10

    Abstract: Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.

    STEEP-SLOPE FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
    943.
    发明申请
    STEEP-SLOPE FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF 有权

    公开(公告)号：US20220223705A1

    公开(公告)日：2022-07-14

    申请号：US17437368

    申请日：2021-07-29

    Applicant: Korea Advanced Institute of Science and Technology

    Inventor： Yang-Kyu Choi ,  Myung-Su Kim

    IPC: H01L29/423 ,  G11C16/10 ,  H01L29/788 ,  H01L21/28 ,  H01L29/66

    Abstract: A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate.

    APPARATUS AND METHOD FOR TRAINING LOW BIT-PRECISION DEEP NEURAL NETWORK
    944.
    发明申请
    APPARATUS AND METHOD FOR TRAINING LOW BIT-PRECISION DEEP NEURAL NETWORK 有权

    公开(公告)号：US20220222523A1

    公开(公告)日：2022-07-14

    申请号：US17206164

    申请日：2021-03-19

    Applicant: Korea Advanced Institute of Science and Technology

    Inventor： Hoi Jun YOO ,  Dong Hyeon HAN

    IPC: G06N3/08 ,  G06N3/04

    Abstract: Disclosed herein are an apparatus and method for training a low-bit-precision deep neural network. The apparatus includes an input unit configured to receive training data to train the deep neural network, and a training unit configured to train the deep neural network using training data, wherein the training unit includes a training module configured to perform training using first precision, a representation form determination module configured to determine a representation form for internal data generated during an operation procedure for the training and determine a position of a decimal point of the internal data so that a permissible overflow bit in a dynamic fixed-point system varies randomly, and a layer-wise precision determination module configured to determine precision of each layer during an operation in each of a feed-forward stage and an error propagation stage and automatically change the precision of a corresponding layer based on the result of determination.

    Elasticity measurement device
    945.
    发明授权
    Elasticity measurement device 有权

    公开(公告)号：US11385149B2

    公开(公告)日：2022-07-12

    申请号：US16633205

    申请日：2018-07-24

    Applicant: Korea Advanced Institute of Science and Technology

    Inventor： Young-Ho Cho ,  Sunghyun Yoon

    IPC: G01N3/42 ,  G01N27/04 ,  G01N27/22 ,  G01N3/06 ,  G01N3/08

    Abstract: An elasticity measurement apparatus includes a lower layer structure having first and second openings, first and second deformable membranes covering the first and second openings to define first and second chamber and deformable by pressure within the first and second chambers respectively, a support layer structure on the lower layer structure to protrude and configured to support the first and second deformable membranes to be spaced apart from the elastic body, a driving portion to apply pressure within the first and second chambers to deform the first and second deformable membranes, and first and second deformation detecting portions to detect deformations of first and second deformable membranes. When the pressure within the first and second chambers is increased from a first pressure to a second pressure, the first deformable membrane is deformed with contacting the elastic body, while the second deformable membrane is deformed without contacting the elastic body.

    3D object acquisition method and apparatus using artificial light photograph
    947.
    发明授权
    3D object acquisition method and apparatus using artificial light photograph 有权

    公开(公告)号：US11380056B2

    公开(公告)日：2022-07-05

    申请号：US16622234

    申请日：2019-10-07

    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Min Hyuk Kim ,  Giljoo Nam

    IPC: G06K9/00 ,  G06T17/20 ,  G06T7/586

    Abstract: Disclosed are herein a three-dimensional (3D) object acquisition method and an object acquisition apparatus using artificial light photographs. A 3D object acquisition method according to an embodiment of the present invention includes receiving a plurality of images of a 3D object photographed by a camera, reconstructing spatially-varying bidirectional reflectance distribution functions for the 3D object based on the plurality of images received, estimating shading normals for the 3D object based on the reconstructed spatially-varying bidirectional reflectance distribution functions, and acquiring 3D geometry for the 3D object based on the estimated shading normals.

Patent Agency Ranking