公开(公告)号：US06828861B2

公开(公告)日：2004-12-07

申请号：US10604649

申请日：2003-08-07

Applicant: Jin Wook Cho ,  Hongxi Xue

Inventor： Jin Wook Cho ,  Hongxi Xue

IPC: H03F368

CPC classification number: H03F3/211 ,  H03F2200/75 ,  H03F2203/21112

Abstract: A power amplifier integrated circuit includes a plurality ofheterojunction bipolar transistors having a plurality of bases, a plurality of ballast resistors, and a capacitor. Each ballast resistor is connected between a base of the transistors and a DC node to which a DC voltage is applied. The capacitor is connected between an RF node, which supplies an RF signal, and the plurality of bases of the transistors. The capacitor provides a distinct path for the RF input signal having a substantially high capacitance, so that the RF input signal does not suffer significant signal loss.

Abstract translation: 功率放大器集成电路包括具有多个基极的多个单结双极晶体管，多个镇流电阻器和电容器。 每个镇流电阻器连接在晶体管的基极和施加有直流电压的直流节点之间。 电容器连接在提供RF信号的RF节点和晶体管的多个基极之间。 电容器为RF输入信号提供了一个不同的路径，具有大体积的高电容，使得RF输入信号不会遭受显着的信号损失。

公开(公告)号：US06816015B2

公开(公告)日：2004-11-09

申请号：US10400774

申请日：2003-03-27

Applicant: Shuyun Zhang ,  Robert Jeffery McMorrow

Inventor： Shuyun Zhang ,  Robert Jeffery McMorrow

IPC: H03F368

CPC classification number: H03F3/19 ,  H03F3/68

Abstract: An improved bipolar transistor power amplifier circuit including a bias input node, an RF input node, an RF output node, and a plurality of HBTs. Each HBT includes a base, an emitter, a collector, a base resistor connected to the base and selected to offset a portion of the voltage drop across the base and emitter of each transistor, an emitter resistor connected to the emitter, and a base capacitor having two electrodes one of which is coupled to the base. The HBTs are grouped together in two or more groups and each group includes a base resistor selected to offset another portion of the voltage drop across the base and emitter of the transistors. The base resistors are coupled to the bias input node, the collectors of each HBT are coupled to the RF output node, and the other electrode of each base capacitor is coupled to the RF input node resulting in a power amplifier with HBT base resistors which do not have to be large enough to provide all of the thermal protection and do not have to dissipate as much power resulting in a more compact layout.

Abstract translation: 一种改进的双极晶体管功率放大器电路，包括偏置输入节点，RF输入节点，RF输出节点和多个HBT。 每个HBT包括基极，发射极，集电极，基极电阻，其连接到基极并被选择以偏移每个晶体管的基极和发射极两端的电压降的一部分，连接到发射极的发射极电阻和基极电容 具有两个电极，其中一个电极耦合到基座。 HBT以两个或更多个组合在一起，并且每个组包括被选择为抵消跨晶体管的基极和发射极的电压降的另一部分的基极电阻。 基极电阻器耦合到偏置输入节点，每个HBT的集电极耦合到RF输出节点，每个基极电容器的另一个电极耦合到RF输入节点，从而产生具有HBT基极电阻器的功率放大器 不必足够大以提供所有的热保护，并且不必耗散尽可能多的功率，从而形成更紧凑的布局。

公开(公告)号：US06798294B2

公开(公告)日：2004-09-28

申请号：US10243358

申请日：2002-09-13

Applicant: Tapio Kuiri

Inventor： Tapio Kuiri

IPC: H03F368

CPC classification number: H03F3/211 ,  H03F2200/294 ,  H03F2200/372

Abstract: A low noise amplifier (500) is provided for amplifying signals in a frequency band. The low noise amplifier (500) comprises several amplifying elements (505, 506) that share a load impedance (503) and a degeneration impedance (504). One of the amplifying elements (505, 506) is activated at a time that the rest are deactivated. The activation and deactivation is done by feeding a bias to a bias port (501, 507) or grounding the same, respectively. A signal to be amplified is fed to the corresponding input (511, 512) depending on which of the amplifying elements (505, 506) is activated. An amplified signal is obtained at an output (513).

Abstract translation: 提供了用于放大频带中的信号的低噪声放大器（500）。 低噪声放大器（500）包括共享负载阻抗（503）和退化阻抗（504）的多个放大元件（505,506）。 放大元件（505,506）中的一个在其余部分被去激活的时间被激活。 激活和去激活分别通过将偏压馈送到偏压端口（501,507a）或将其接地。 根据哪个放大元件（505,506）被激活，被放大的信号被馈送到对应的输入端（511,512）。 在输出（513）处获得放大的信号。

公开(公告)号：US06731172B2

公开(公告)日：2004-05-04

申请号：US09761100

申请日：2001-01-16

Applicant: Philip H. Thompson

Inventor： Philip H. Thompson

IPC: H03F368

CPC classification number: H03H7/38 ,  H03F1/0288

Abstract: A Doherty amplifier system including a quarter wave transformer/combiner circuit which may be implemented as a low cost radio frequency integrated circuit, thereby absorbing and minimizing the effects of parasitics such as bond wires and stray capacitance. The quarter wave transformer/combiner circuit may be a lumped pi network configured as an integral number of sections coupled in parallel, with each such section comprising a series combination of a shunt inductance, series capacitance, and shunt inductance. The circuit may also provide bias voltage to the carrier and peaking amplifiers and/or maintain DC isolation therebetween. The circuit may also decrease the load impedance presented to the carrier amplifier as input power increases, thus allowing the efficiency of the system to be kept relatively constant over a prescribed power range.

Abstract translation: Doherty放大器系统包括四分之一波长变换器/组合器电路，其可被实现为低成本射频集成电路，从而吸收和最小化寄生效应如接合线和杂散电容的影响。 四分之一波长变压器/组合器电路可以是被配置为并联耦合的整数个部分的集总pi网络，每个这样的部分包括并联电感，串联电容和分流电感的串联组合。 该电路还可以向载波提供偏置电压并使峰值放大器和/或维持它们之间的DC隔离。 当输入功率增加时，该电路还可以降低呈现给载波放大器的负载阻抗，从而允许系统在规定功率范围内保持相对恒定的效率。

公开(公告)号：US06720827B2

公开(公告)日：2004-04-13

申请号：US10387672

申请日：2003-03-13

Applicant: Taesub Ty Yoon

Inventor： Taesub Ty Yoon

IPC: H03F368

CPC classification number: H03F3/505 ,  H03F3/085 ,  H03F3/45475 ,  H03F3/45973

Abstract: A differential transimpedance amplifier includes a differential transconductance stage to provide a current to a differential transimpedance stage. The differential transimpedance stage includes two gain stages and provides a voltage. A first feedback element is coupled in parallel with the differential transimpedance stage.

Abstract translation: 差分跨阻放大器包括差分跨导级以向差分跨阻级提供电流。 差分跨阻级包括两个增益级并提供一个电压。 第一反馈元件与差动跨阻级并联耦合。

公开(公告)号：US06710662B2

公开(公告)日：2004-03-23

申请号：US10245832

申请日：2002-09-16

Applicant: Sung-ho Wang

Inventor： Sung-ho Wang

IPC: H03F368

CPC classification number: H03F1/0277 ,  H03F1/22 ,  H03F1/3205 ,  H03F3/189

Abstract: A power amplifier includes drains and sources of a plurality of transistors connected to each other to produce a plurality of common drains and a plurality of common sources, wherein the common drains are connected at a common drain point and wherein the common drain point is connected via an RF choke to a power supply voltage terminal and wherein the common sources are grounded; an output terminal connected to the RF choke; a plurality of bias terminals each coupled via a resistor to the gate of one of the plurality of transistors wherein each of the gates of the plurality of transistors is also capacitively coupled to a radio frequency input.

Abstract translation: 功率放大器包括彼此连接的多个晶体管的漏极和源极，以产生多个公共漏极和多个公共源，其中公共漏极在公共漏极点处连接，并且其中公共漏极点经由 将RF扼流器连接到电源电压端子，并且其中所述公共源接地; 连接到RF扼流圈的输出端子; 多个偏置端子，每个偏置端子经由电阻器耦合到多个晶体管中的一个晶体管的栅极，其中多个晶体管的每个栅极也电容耦合到射频输入。

公开(公告)号：US06690233B2

公开(公告)日：2004-02-10

申请号：US09746530

申请日：2000-12-21

Applicant: Wendell B. Sander

Inventor： Wendell B. Sander

IPC: H03F368

CPC classification number: H03C5/00 ,  H03F1/0222 ,  H03F1/0294

Abstract: The present invention, generally speaking, provides a highly efficient RF power amplifier having a large output dynamic range. The amplifier avoid the large power dissipation that occurs in the LINC combiner at lower output levels. In general, this is achieved by using power-controlled switch-mode power amplifiers to vary output power at large power outputs, and reverting to LINC only at low output powers. Thus the present invention achieves the desirable combination of high efficiency at all output powers, while maintaining the fine output power control of the LINC method. More particularly, the power amplifier is based on a highly efficient structure in which amplitude modulation/power control of the output of an RF amplifier is achieved by operating the amplifier in switch mode and varying the power supply of the amplifier, as described more fully in U.S. patent application Ser. No. 09/637,269 entitled High-Efficiency Modulating RF Amplifier, filed Aug. 10, 2000 and incorporated herein by reference. Such an amplifier behaves quite linearly at high power but may exhibit non-linearity at lower output powers. Good linearity throughout a wide dynamic range, and particularly at low output power, may be achieved by phasing and combining the outputs of two (or more) such amplifiers. At high and medium power, the outputs are combined in-phase, allowing for low-loss, high-efficiency operation. At low power, the outputs are phased such that power subtraction occurs. In this manner, each amplifier may be operated at a power level that exhibits good linearity while producing an output signal of a lower power level that would normally fall within a region of substantial non-linearity.

Abstract translation: 本发明一般地提供了具有大输出动态范围的高效RF功率放大器。 放大器避免了LINC组合器在较低输出电平下发生的大功耗。 一般来说，这是通过使用功率控制开关模式功率放大器来改变大功率输出的输出功率而实现的，并且仅在低输出功率下才能还原到LINC。 因此，在保持LINC​​方法的精细输出功率控制的同时，本发明在所有输出功率下实现了高效率的期望组合。 更具体地，功率放大器基于高效率的结构，其中通过以开关模式操作放大器并改变放大器的电源来实现RF放大器的输出的幅度调制/功率控制，如下文更全面地描述的 美国专利申请 2000年8月10日提交的题为“高效率调制RF放大器”的No.09 / 637,269，并入本文作为参考。 这种放大器在高功率下行为相当线性，但是在较低的输出功率下可能呈现非线性。 可以通过两个（或多个）这样的放大器的输出相位和组合来实现在宽动态范围内，特别是在低输出功率下的良好线性度。 在高功率和中等功率下，输出同相并联，允许低损耗，高效率的操作。 在低功率时，输出被分阶段实现功率相减。 以这种方式，每个放大器可以以显示良好线性度的功率电平工作，同时产生通常落在基本非线性区域内的较低功率电平的输出信号。

公开(公告)号：US06661290B2

公开(公告)日：2003-12-09

申请号：US10050590

申请日：2002-01-18

Applicant: Masayuki Sugiura

Inventor： Masayuki Sugiura

IPC: H03F368

CPC classification number: H03F3/211 ,  H03F1/302 ,  H03F3/19 ,  H03F2203/21178

Abstract: The present invention includes: a plurality of high-frequency amplifier sections, each being composed of bipolar transistors; capacitors, each corresponding to one of the high-frequency amplifier sections, one end of each capacitor being connected to the bases of the bipolar transistors in the corresponding high-frequency amplifier section, and the other end thereof being connected to a high-frequency signal source; and bias circuits, each corresponding to one of the high-frequency amplifier sections, supplying a bias voltage to the bases of the bipolar transistors of the corresponding high-frequency amplifier section. Each bias circuit has a bias voltage lowering section, which is located close to the bipolar transistors of the corresponding high-frequency amplifier section to reduce the bias voltage in response to a rise in temperature of the bipolar transistors.

Abstract translation: 本发明包括：多个高频放大器部分，每个高频放大器部分由双极晶体管组成; 电容器，各自对应于高频放大器部分中的一个，每个电容器的一端连接到相应的高频放大器部分中的双极晶体管的基极，另一端连接到高频信号 资源; 以及各自对应于高频放大器部分之一的偏置电路，将偏置电压提供给相应的高频放大器部分的双极晶体管的基极。 每个偏置电路具有偏置电压降低部分，该偏置电压降低部分位于相应的高频放大器部分的双极晶体管附近，以响应双极晶体管的温度升高来降低偏置电压。

公开(公告)号：US06642794B2

公开(公告)日：2003-11-04

申请号：US09920117

申请日：2001-08-01

Applicant: Jan Mulder ,  Dominicus Martinus Wilhelmus Leenaerts ,  Edwin Van Der Heijden

Inventor： Jan Mulder ,  Dominicus Martinus Wilhelmus Leenaerts ,  Edwin Van Der Heijden

IPC: H03F368

CPC classification number: H03F3/343 ,  H03F1/22 ,  H03F2200/372

Abstract: An amplifier, in particular an RF amplifier is described having an amplifier input, the amplifier comprises: a first controllable semiconductor having a first controllable mainstream path coupled to first source means for controlling the first mainstream path, and having a first biased control input; and a second controllable semiconductor having a second controllable mainstream path coupled to second source means for controlling the second mainstream path, and having a second control input coupled to the first main stream path and to the amplifier input. Both the first and second mainstream paths are coupled to a common load, and the first and second source means are arranged for controlling input impedance and noise impedance respectively of the amplifier input. This amplifier arrangement allows independent control and optimisation of both the amplifier input impedance and the noise impedance.

公开(公告)号：US06639464B2

公开(公告)日：2003-10-28

申请号：US10310064

申请日：2002-12-05

Applicant: Richard Hellberg

Inventor： Richard Hellberg

IPC: H03F368

CPC classification number: H03F3/24 ,  H03F1/0288 ,  H03F2200/102 ,  H03F2200/451

Abstract: A composite amplifier includes a main power amplifier (10) and an auxiliary power amplifier (12), which are connected to a load (26) over a Doherty output network. An attenuator (34) is provided for activating the auxiliary power amplifier (12) before the main amplifier (10) is saturated. Preferably the input drive voltage to the auxiliary power amplifier (12) is increased along a smooth curve as the input signal amplitude to the composite amplifier increases.