公开(公告)号：US20060110626A1

公开(公告)日：2006-05-25

申请号：US10995112

申请日：2004-11-24

Applicant: Abdelouahab Ziani ,  Michael Lathrop ,  Francois Dary

Inventor： Abdelouahab Ziani ,  Michael Lathrop ,  Francois Dary

IPC: G11B5/66 ,  C23C14/00

CPC classification number: C22C27/06 ,  B32B15/01 ,  B32B15/017 ,  C23C14/14 ,  C23C14/3414 ,  G11B5/7325 ,  G11B5/8404 ,  G11B5/851 ,  H01F10/005 ,  H01F41/183

Abstract: The invention provides a sputter target material. The sputter target material comprises an alloy system comprising Cr—C, Cr—M—C or Cr—M1—M2—C, wherein C comprises at least 0.5 and as much as 20 atomic percent; M comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Y, Zr, Nb, Mo, Hf, Ta, and W; M1 comprises at least 0.5 and as much as 20 atomic percent and is an element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W, and M2 comprises at least 0.5 and as much as 10 atomic percent and is an element selected from the group consisting of Li, Mg, Al, Sc, Mn, Y, and Te. A magnetic recording medium comprising a substrate and at least an underlayer comprising the sputter target material of the invention also is provided. A method of manufacturing a sputter target material further provided. The method can employ powder materials comprising a combination of elements can include a chromium alloy, a carbide or carbon containing master alloy.

Abstract translation: 本发明提供溅射靶材料。 溅射靶材料包括包含Cr-C，Cr-MC或Cr-M 1 -M 2 -C-的合金体系，其中C包含至少0.5和至多 为20原子％; M包含至少0.5原子％至多20原子％，并且是选自Ti，V，Y，Zr，Nb，Mo，Hf，Ta和W的元素; M 1至少包含0.5和20原子百分比，并且是选自Ti，V，Zr，Nb，Mo，Hf，Ta和W的元素，M < SUB> 2 包含至少0.5和高达10原子％，并且是选自Li，Mg，Al，Sc，Mn，Y和Te的元素。 还提供了包括基底和包括本发明的溅射靶材料的至少底层的磁记录介质。 进一步提供制造溅射靶材料的方法。 该方法可以使用包括元素组合的粉末材料可以包括铬合金，含碳化物或含碳的母合金。

公开(公告)号：US20060090998A1

公开(公告)日：2006-05-04

申请号：US11259409

申请日：2005-10-25

Applicant: Yoshinori Honda ,  Takayuki Ichihara ,  Hiroyuki Nakagawa ,  Kiwamu Tanahashi

Inventor： Yoshinori Honda ,  Takayuki Ichihara ,  Hiroyuki Nakagawa ,  Kiwamu Tanahashi

IPC: B05D5/12 ,  C23C14/32

CPC classification number: C23C14/3414 ,  G11B5/65 ,  G11B5/66 ,  G11B5/667 ,  G11B5/851

Abstract: A perpendicular magnetic recording medium is manufactured having excellent thermal stability and recording performances across the entire disk surface. In one embodiment, the recording layer includes at least two layers deposited by using a reactive sputtering method under an oxygen-containing atmosphere at a deposition rate larger than the second recording layer which is formed on the first recording layer while depositing the first recording layer on the intermediate layer.

Abstract translation: 制造了具有优异的热稳定性和整个盘表面的记录性能的垂直磁记录介质。 在一个实施例中，记录层包括通过使用反应溅射法在含氧气氛下以大于形成在第一记录层上的第二记录层的沉积速率沉积的至少两层，同时将第一记录层沉积在 中间层。

公开(公告)号：US07029772B2

公开(公告)日：2006-04-18

申请号：US09949018

申请日：2001-09-10

Applicant: Hiroshi Sakai ,  Tetsuya Osaka

Inventor： Hiroshi Sakai ,  Tetsuya Osaka

IPC: G11B5/66 ,  G11B5/70

CPC classification number: G11B5/667 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/851

Abstract: A magnetic recording medium that enables enhancement of squareness ratio and Hn and exhibits excellent noise characteristics and thermal stability is disclosed. A production process for the medium, and a magnetic recording and reproducing apparatus are also disclosed. The magnetic recording medium including a substrate 1, a carbon-containing carbon undercoat film 2 formed thereon, and a perpendicular magnetic film 3, in which most of easy-magnetization axes are oriented vertically with respect to the substrate, formed on the undercoat film. The perpendicular magnetic film is formed through a plurality of sputtering operations using at least one element selected from Pt and Pd and through a plurality of sputtering operations using a Co-containing material.

Abstract translation: 公开了能够提高矩形比和Hn并且显示出优异的噪声特性和热稳定性的磁记录介质。 还公开了介质的制造方法以及磁记录和再现装置。 包含基板1，形成在其上的含碳碳基底涂层膜2的磁记录介质以及在底涂层上形成大部分易磁化轴相对于基板垂直取向的垂直磁性膜3。 通过使用选自Pt和Pd中的至少一种元素和通过使用含Co材料的多次溅射操作的多次溅射操作形成垂直磁性膜。

公开(公告)号：US20060078683A1

公开(公告)日：2006-04-13

申请号：US11285254

申请日：2005-11-22

Applicant: Ryoichi Mukai

Inventor： Ryoichi Mukai

IPC: G11B5/66 ,  B05D5/12 ,  B05D1/36

CPC classification number: G11B5/7325 ,  G11B5/656 ,  G11B5/66 ,  G11B5/8404 ,  G11B5/851

Abstract: A first group of atoms is first deposited for forming a multilayered structure film. The atoms are subjected to heat treatment to form a first polycrystalline layer. A second group of atoms is deposited on the surface of the first polycrystalline layer so as to form a second polycrystalline layer having a thickness larger than the thickness of the first polycrystalline layer. A third group of atoms is deposited on the surface of the second polycrystalline layer so as to form a magnetic polycrystalline layer. The method enables a reliable prevention of migration of atoms in the first group during the deposition of the first group. This enables establishment of fine and uniform crystal grains in the first polycrystalline layer. Migration can still be suppressed during the deposition of the second group. Fine and uniform crystal grains can thus be established in the second polycrystalline layer.

Abstract translation: 首先沉积第一组原子以形成多层结构膜。 对原子进行热处理以形成第一多晶层。 第二组原子沉积在第一多晶层的表面上，以便形成厚度大于第一多晶层的厚度的第二多晶层。 第三组原子沉积在第二多晶层的表面上以形成磁性多晶层。 该方法能够可靠地防止在第一组沉积期间第一组中原子的迁移。 这使得能够在第一多晶层中形成精细且均匀的晶粒。 在第二组的沉积期间迁移仍然可以被抑制。 因此可以在第二多晶层中建立精细均匀的晶粒。

公开(公告)号：US20060076233A1

公开(公告)日：2006-04-13

申请号：US11246344

申请日：2005-10-06

Applicant: Yoshinori Honda ,  Ikuko Takekuma ,  Ichiro Tamai

Inventor： Yoshinori Honda ,  Ikuko Takekuma ,  Ichiro Tamai

IPC: C23C14/00

CPC classification number: G11B5/851 ,  C23C14/0057 ,  C23C14/568 ,  G11B5/667

Abstract: A reactive sputtering method is provided for producing a magnetic layer in a stable manner with good reproducibility. One aspect of the invention is to form a magnetic layer for a magnetic recording medium without adversely affecting magnetic properties. Carbon oxide gas is added at the time of reactive sputtering. In one embodiment, a method for producing a magnetic recording medium includes forming at least a soft magnetic layer and a magnetic layer above a substrate, wherein forming said magnetic layer includes sputtering with argon gas and carbon oxide gas.

Abstract translation: 提供了以良好的再现性稳定地制造磁性层的反应性溅射方法。 本发明的一个方面是形成用于磁记录介质的磁性层，而不会不利地影响磁特性。 在反应溅射时加入碳氧化物气体。 在一个实施例中，制造磁记录介质的方法包括至少在基板上形成软磁性层和磁性层，其中形成所述磁性层包括用氩气和碳氧化物气体溅射。

公开(公告)号：US20060024531A1

公开(公告)日：2006-02-02

申请号：US11188884

申请日：2005-07-26

Applicant: Motoyoshi Murakami

Inventor： Motoyoshi Murakami

IPC: B05D5/12 ,  G11B5/66

CPC classification number: H01F41/18 ,  B82Y10/00 ,  G11B5/65 ,  G11B5/743 ,  G11B5/82 ,  G11B5/851 ,  G11B11/10504 ,  G11B11/10515 ,  G11B11/10582 ,  G11B11/10584 ,  G11B11/10586 ,  G11B2005/0021 ,  G11B2005/0029 ,  H01F10/126

Abstract: A magnetic recording medium is disclosed which eliminates the difficulty of stably forming tiny recording magnetic domains during high density recording. The magnetic recording medium is constituted such that at least a recording layer is provided on a disk substrate, and the recording layer is bonded with hydrogen and is in a localized and stable state of coupling with a rare earth metal, as well as a method for manufacturing this medium. As a result, the magnetic anisotropy of the recording layer is increased and a stable film structure can be formed, which stabilizes the recording magnetic domains even when the mark length is reduced, and greatly increases recording density without reducing the reproduction signal amplitude.

Abstract translation: 公开了一种磁记录介质，其消除了在高密度记录期间稳定地形成微小记录磁畴的难度。 磁记录介质构成为至少在盘基片上设置记录层，记录层与氢键合，并且与稀土金属的局部稳定的状态结合，以及用于 制造这种介质。 结果，记录层的磁各向异性增加，并且可以形成稳定的膜结构，即使当标记长度减小时也能稳定记录磁畴，并且在不降低再现信号幅度的情况下大大提高记录密度。

公开(公告)号：US20060003190A1

公开(公告)日：2006-01-05

申请号：US11221270

申请日：2005-09-07

Applicant: E. Abarra ,  Akihiro Inomata ,  Antony Ajan

Inventor： E. Abarra ,  Akihiro Inomata ,  Antony Ajan

IPC: G11B5/66

CPC classification number: G11B5/732 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/84 ,  G11B5/851

Abstract: A magnetic recording medium is provided with an hcp Co alloy magnetic layer with the crystallographic c-axes tilted at an angle from a substrate surface and fixed relative to a recording direction. The tilt is induced by epitaxial growth of the hcp Co alloy on an obliquely evaporated nonmagnetic polycrystalline underlayer, so that the magnetic recording medium exhibits thermal stability and improved overwrite with a single pole-type head.

公开(公告)号：US06979388B2

公开(公告)日：2005-12-27

申请号：US10758932

申请日：2004-01-16

Applicant: Ernesto E. Marinero ,  Timothy Martin Reith ,  Hal Jerves Rosen ,  Brian R. York

Inventor： Ernesto E. Marinero ,  Timothy Martin Reith ,  Hal Jerves Rosen ,  Brian R. York

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/44 ,  C23C14/50 ,  G11B5/64 ,  G11B5/851 ,  H01F41/18

CPC classification number: C23C14/345 ,  C23C14/34 ,  C23C14/50 ,  G11B5/656 ,  G11B5/851 ,  H01F41/18 ,  H01F41/183 ,  H01J37/3473 ,  Y10S428/90

Abstract: A method of influencing variations in composition of thin films is described. The elemental plasma field distribution in sputtering systems is manipulated by generating a nonuniform electric field along a surface of the substrate to alter the composition by differentially re-sputtering the target elements. The nonuniform electric field is used to modulate the kinetic energy of the ions generated in the plasma which strike the thin film's surface. By applying varying electric potentials at a plurality of points on a conductive surface of a substrate, the electric field across the surface of the substrate can be modulated in a variety of patterns. In the preferred embodiment a radial voltage gradient is applied to a conductive surface of a disk on which a magnetic thin film is being formed to radially modulate the platinum content of the magnetic film.

Abstract translation: 描述了影响薄膜组成变化的方法。 溅射系统中的元素等离子体场分布通过沿着衬底的表面产生不均匀的电场来操纵，以通过差别地再次溅射靶元素来改变组成。 不均匀电场用于调制在等离子体中产生的离子的动能，其冲击薄膜的表面。 通过在衬底的导电表面上的多个点处施加变化的电势，可以以各种图案调制穿过衬底表面的电场。 在优选实施例中，径向电压梯度被施加到其上形成有磁性薄膜的盘的导电表面以径向调制磁性膜的铂含量。

公开(公告)号：US20050277002A1

公开(公告)日：2005-12-15

申请号：US10866795

申请日：2004-06-15

Applicant: Abdelouahab Ziani ,  Yuanda Cheng ,  Bernd Kunkel ,  Michael Bartholomeusz

Inventor： Abdelouahab Ziani ,  Yuanda Cheng ,  Bernd Kunkel ,  Michael Bartholomeusz

IPC: C22C19/07 ,  C23C14/20 ,  C23C14/34 ,  G11B5/64 ,  G11B5/66 ,  G11B5/85 ,  G11B5/851 ,  C23C14/32 ,  G11B5/706

CPC classification number: G11B5/851 ,  C22C19/07 ,  C23C14/3414 ,  G11B5/656

Abstract: A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X1, where X1 is an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X2, wherein X2 is selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X3, wherein X3 is an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.

Abstract translation: 溅射靶，其中溅射靶由Co组成，大于0且高达24原子％的Cr，大于0且高达20原子％的Pt，大于0和高达20原子百分比的B，以及 大于0且高达10原子％X 1，其中X 1是选自Ag，Ce，Cu，Dy，Er，Eu的元素 ，Gd，Ho，In，La，Lu，Mo，Nd，Pr，Sm，Tl，W和Yb。 溅射靶还包括X 2，其中X 2选自W，Y，Mn和Mo。此外，溅射靶更进一步 其中X 3为选自Ti，V，Zr，Nb，Ru，Rh，Pd等的元素，其含量为0〜7原子％X 3， Hf，Ta和Ir。 由溅射靶溅射的薄膜的矫顽力值在1000奥斯特和4000奥斯特德之间。

公开(公告)号：US20050274601A1

公开(公告)日：2005-12-15

申请号：US11141046

申请日：2005-06-01

Applicant: Kenichi Moriwaki ,  Kazuyuki Usuki ,  Junji Nakada

Inventor： Kenichi Moriwaki ,  Kazuyuki Usuki ,  Junji Nakada

IPC: G11B5/73 ,  C23C14/20 ,  C23C14/32 ,  C23C14/35 ,  C23C14/56 ,  G11B5/851

CPC classification number: C23C14/562 ,  C23C14/205 ,  C23C14/352 ,  G11B5/7315 ,  G11B5/7325 ,  G11B5/7379 ,  G11B5/851 ,  Y02T50/67

Abstract: A method for manufacturing a magnetic recording medium, the method comprising forming a magnetic layer on at least one side of a flexible polymer support by a sputtering method, wherein the flexible polymer support contains at least one of polyethylene terephthalate, polyethylene naphthalate, polyamide and polyimide, the forming of a magnetic layer is carried out while carrying the flexible polymer support along a roll having a maximum surface roughness of from 0.01 to 0.4 μm, and a deposition rate in the sputtering method for forming of a magnetic layer is from 0.5 to 17 nm/sec.

Abstract translation: 一种制造磁记录介质的方法，所述方法包括通过溅射法在柔性聚合物载体的至少一侧上形成磁性层，其中柔性聚合物载体包含聚对苯二甲酸乙二醇酯，聚萘二甲酸乙二醇酯，聚酰胺和聚酰亚胺中的至少一种 在沿着最大表面粗糙度为0.01〜0.4μm的辊的同时承载柔性聚合物载体的同时进行磁性层的形成，并且在形成磁性层的溅射法中的沉积速率为0.5〜17 nm / sec。