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公开(公告)号:US12293090B2
公开(公告)日:2025-05-06
申请号:US17939949
申请日:2022-09-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Vincent Tung Pham , Andrew Zhenwen Chang
Abstract: A storage device is disclosed. The storage device may include a storage for a data and a controller to manage access to the data in the storage. A mechanism may automatically manage a bias mode for a chunk of the data in the storage, the bias mode including one of a host bias mode and a device bias mode.
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公开(公告)号:US12293079B2
公开(公告)日:2025-05-06
申请号:US17665490
申请日:2022-02-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Veronica Lagrange Moutinho Dos Reis , Vishwanath Maram , Matthew Bryson , Gayathri Venkataraman
IPC: G06F3/06
Abstract: A method may include receiving, at a storage device, an input and/or output (I/O) request comprising a device indication performing a determination, at the storage device, that the device indication indicates the storage device, and servicing, by the storage device, the I/O request based on the determination. The device indication may include an address for the I/O request. The method may include installing a second storage device in the storage system. The second storage device may be installed seamlessly. The first and second storage devices may be peer devices. The method may further including receiving, at the first storage device, a second I/O request including a second device indication, performing a second determination, by the first storage device, that the second device indication indicates the second storage device, and forwarding, by the first storage device, the second I/O request to the second storage device based on the second determination.
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83.
公开(公告)号:US12292827B2
公开(公告)日:2025-05-06
申请号:US18238262
申请日:2023-08-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Seunghyun Choi , Keunsan Park , Heetak Shin , Junyeong Han , Gyeongmin Kim , Joon-Whan Bae , Jooyoung Hwang
Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.
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84.
公开(公告)号:US12292762B2
公开(公告)日:2025-05-06
申请号:US17704130
申请日:2022-03-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seungkwon Choi
Abstract: According to certain embodiments, an electronic device comprises: a front case including a seating portion, and a display module disposed in the seating portion; wherein the front case includes a first fiducial mark, wherein the first fiducial mark includes: a first fiducial gap; a first area surrounding at least a portion of the first fiducial gap having a first surface roughness; and a second area exclusive with the first area, having a second surface roughness that is different from the first surface roughness.
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公开(公告)号:US12291540B2
公开(公告)日:2025-05-06
申请号:US16831700
申请日:2020-03-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jiyoun Lee , Soyeon Kim , Yongsuk Cho , Jongwon Choi , Dmitry Kravchuk , Banglin Lee , Hyun Koo , Sunghun Lee , Yuri Cho
IPC: C07F15/00 , H10K50/11 , H10K85/30 , H10K101/10
Abstract: Provided are an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device: wherein, in Formula 1, Y2, ring CY1, ring CY2, T1, T2, A1 to A7, a1, and a2 are as defined in the specification.
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公开(公告)号:US12290778B2
公开(公告)日:2025-05-06
申请号:US17536048
申请日:2021-11-28
Applicant: Samsung Electronics Co., Ltd. , CSK Inc.
Inventor: Seo Young Maeng , Il Jun Jeon , Su Ji Gim , Jin Hong Kim , Young Seok Roh , Jong Yong Bae , Jung Joon Pyeon
IPC: B01D46/76 , B01D46/00 , B01D46/24 , B01D46/64 , B01D53/04 , C23C16/34 , C23C16/44 , C23C16/455 , H01L21/02
Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.
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公开(公告)号:US12290343B2
公开(公告)日:2025-05-06
申请号:US17748187
申请日:2022-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tak Hyung Lee , Byung Hoon Ko , Seung Woo Noh , Sang Yun Park , Jin Woo Choi
Abstract: An apparatus for estimating bio-information, may include: a main body; a photoplethysmogram (PPG) sensor disposed in the main body and configured to measure a PPG signal from an object of a user; an internal pressure sensor disposed in a closed space formed in the main body, and configured to measure a pressure applied to the closed space when the object applies force to a surface of the main body; and a processor configured to estimate the bio-information of the user based on the PPG signal and the pressure applied to the closed space.
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公开(公告)号:US12290342B2
公开(公告)日:2025-05-06
申请号:US17538388
申请日:2021-11-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chang Mok Choi , Tak Hyung Lee , Ho Jun Chang
Abstract: An apparatus for estimating bio-information, may include: a sensor part having a photoplethysmography (PPG) sensor configured to measure a PPG signal from an object of a user, and a force sensor configured to measure a contact force between the object and the PPG sensor; an output interface, which before the PPG signal is measured, is configured to output first guide information indicating a predetermined number of times the user is required to touch the sensor part, and second guide information indicating a number of times that the sensor part has been touched since the first guide information is output; and a processor configured to estimate bio-information of the user by using the PPG signal based on the number of times that the sensor has been touched since the first guide information is output, corresponding to the predetermined number of times the user is required to touch.
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公开(公告)号:US20250143002A1
公开(公告)日:2025-05-01
申请号:US18647396
申请日:2024-04-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyungsung CHU , In-Sang SONG
IPC: H01L27/146
Abstract: An image sensor module according to some example embodiments includes a reinforcement plate; a substrate on the reinforcement plate and defining a cavity; an image sensor chip in the cavity and configured to convert externally collected light to an electrical signal; an adhesive member along an upper edge of the image sensor chip; an optic filter on the adhesive member and defining an open region extending into a center of the optic filter, the optic filter covering an upper surface of the image sensor chip; and a bonding wire of which a first end is connected with the image sensor chip through the adhesive member and a second end is connected with the substrate.
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公开(公告)号:US20250142952A1
公开(公告)日:2025-05-01
申请号:US18796895
申请日:2024-08-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Haegeon JUNG , Dongkwon Kim , Myeongji Kim , Sangduk Park , Keunhee Bai , Gahyun Lim
IPC: H01L27/092 , H01L21/8238 , H01L23/528 , H01L25/18 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/66 , H01L29/775 , H01L29/786
Abstract: A method of manufacturing an integrated circuit device is provided. The method includes: providing a substrate including a base substrate layer, an insulating substrate layer, and a cover substrate layer that are sequentially stacked in a vertical direction; forming, on the substrate, a stacked structure including a plurality of sacrificial semiconductor layers and a plurality of nanosheet semiconductor layers that are alternately stacked one layer at a time; and forming a plurality of trench regions to define a plurality of fin-type active regions by etching the stacked structure and the substrate. The he forming of the plurality of trench regions includes, by using the insulating substrate layer as an etch stop layer, etching portions of the stacked structure and the cover substrate layer in the vertical direction up to an upper surface of the insulating substrate layer.
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