公开(公告)号：US20240069777A1

公开(公告)日：2024-02-29

申请号：US18238282

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunsan Park ,  Gyeongmin Kim ,  Joon-Whan Bae ,  Heetak Shin

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0652 ,  G06F3/0679 ,  G06F3/0604

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller including an internal buffer including zone buffers, and configured to: allocate a plurality of zones to a storage space, select two or more erase units to be allocated to each zone based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, based on reads for sequential logical addresses being requested by the external host device, read first data corresponding to the sequential logical addresses from the nonvolatile memory device, and output the first data to the external host device, and based on the reads being requested, perform a prefetch operation by reading second data corresponding to next sequential logical addresses, and storing the second data in the internal buffer, without receiving a next read request from the external host device.

公开(公告)号：US09147475B2

公开(公告)日：2015-09-29

申请号：US13945460

申请日：2013-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Jung ,  Heetak Shin ,  Jinwoo Jung ,  Wan-Soo Choi

IPC: G11C11/56 ,  G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/32 ,  G11C2211/5622 ,  G11C2211/5641

Abstract: A storage device is provided which includes a plurality of memory chips each nonvolatile memory cells divided into a first memory region and a second memory region; and a memory controller configured to buffer data provided from the exterior and to control the plurality of memory chips to perform a buffer-program operation and a main-program operation. The buffered data is stored at the first memory region at the buffer-program operation and data stored at the first memory region is written at the second memory region at the main-program operation. During a main-program operation of a first memory chip among the plurality of memory chips, the memory controller buffers data to be written at a second memory chip.

Abstract translation: 提供存储装置，其包括多个存储器芯片，每个非易失性存储器单元分成第一存储区域和第二存储器区域; 以及存储器控制器，被配置为缓冲从外部提供的数据并且控制所述多个存储器芯片以执行缓冲器程序操作和主程序操作。 缓冲数据以缓冲器程序操作存储在第一存储器区域，并且存储在第一存储器区域的数据被写入主程序操作的第二存储器区域。 在多个存储器芯片中的第一存储器芯片的主程序操作期间，存储器控制器缓冲要写入第二存储器芯片的数据。

公开(公告)号：US12298902B2

公开(公告)日：2025-05-13

申请号：US18237806

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Whan Bae ,  Junyeong Han ,  Kui-Yon Mun ,  Heetak Shin

IPC: G06F12/00 ,  G06F3/06 ,  G06F11/10 ,  G06F11/14 ,  G06F12/02

Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.

公开(公告)号：US12292827B2

公开(公告)日：2025-05-06

申请号：US18238262

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghyun Choi ,  Keunsan Park ,  Heetak Shin ,  Junyeong Han ,  Gyeongmin Kim ,  Joon-Whan Bae ,  Jooyoung Hwang

IPC: G06F11/10 ,  G06F3/06 ,  G06F11/14 ,  G06F12/02

Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.

公开(公告)号：US20240070033A1

公开(公告)日：2024-02-29

申请号：US18238301

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong HAN ,  Kui-Yon Mun ,  Jooyoung Hwang ,  Keunsan Park ,  Gyeongmin Kim ,  Heetak Shin ,  Seunghyun Choi

IPC: G06F11/14 ,  G06F3/06

CPC classification number: G06F11/1451 ,  G06F3/0619 ,  G06F3/0647 ,  G06F3/0652 ,  G06F3/0656 ,  G06F3/0679

Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.