Abstract:
Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.
Abstract:
A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
Abstract:
The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.
Abstract:
The invention generally provides a method for depositing materials, and more particularly, embodiments of the invention relate to chemical vapor deposition processes and atomic layer deposition processes utilizing photoexcitation techniques to deposit barrier layers, seed layers, conductive materials, and dielectric materials. Embodiments of the invention generally provide methods of the assisted processes and apparatuses, in which the assisted processes may be conducted for providing uniformly deposited material.
Abstract:
A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.
Abstract:
Aspects of the invention include methods and apparatus for processing a batch of substrates. In one embodiment, a compressed substrate boat is configured to reduce pumping volume in a batch processing chamber. The compressed substrate boat comprises a stationary substrate boat and a movable substrate boat, each may be loaded/unloaded independently. The movable substrate boat and the stationary substrate boat may be interleaving with one another such that the distance between the substrates is reduced. In another embodiment, a substrate boat having removable substrate holder is configured to provide susceptors without dramatically increasing pumping volume. The removable substrate holder may be loaded/unloaded away from the substrate boat with susceptors. The removable substrate holder is engaged with the substrate boat such that substrates thereon are interleaving with the susceptors. Embodiments of the present invention reduces pumping volume and increases throughput, hence reduces cost of ownership during batch processing.
Abstract:
A gas valve for pulsing a gas comprises a housing assembly having at least one inlet port, an outlet port, and a selector plate mounted within the housing assembly and comprising at least one timing slot, wherein reciprocation motion of the selector plate periodically couples at least one inlet port to the outlet port through the timing slot.
Abstract:
A set of lift pins defines a storage location for a substrate in a substrate processing chamber. Each lift pin has an actuating mechanism including a translating mechanism that translates vertical actuation into horizontal motion. The actuating mechanism may include a base, a mechanism adapted to raise and lower the base, and a lever pivotally mounted on the base. The lift pin may be fixedly mounted on the lever. A stop may be adjacent the base and adapted to engage the lever to pivot the lever as the base is lowered.
Abstract:
The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.
Abstract:
A method and arrangement for lifting lowering and centering a substrate on a surface employs lift pins have conical tips. A capture range is provided by the conical tips to capture and center misaligned wafers. One or more of the pins are inclined in certain embodiments to enhance the alignment capability of the lift pins. The inclined lift pins, when retracting into a support member at an angle, move a supported substrate horizontally into proper alignment.