公开(公告)号：US07375383B2

公开(公告)日：2008-05-20

申请号：US11714890

申请日：2007-03-07

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L29/22 ,  H01L33/00

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US07332365B2

公开(公告)日：2008-02-19

申请号：US10848937

申请日：2004-05-18

Applicant: Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

Inventor： Shuji Nakamura ,  Steven DenBaars ,  John Edmond ,  Chuck Swoboda ,  Umesh Mishra

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/465 ,  H01L33/0079 ,  H01L33/105 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L2933/0016

Abstract: A method according to the present invention for fabricating high light extraction photonic devices comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.

Abstract translation: 根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜面层，使得外延半导体结构夹在第一镜面层和衬底之间 。 倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。 然后通过向衬底引入蚀刻环境，从衬底去除衬底。 第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。 根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

公开(公告)号：US20070190758A1

公开(公告)日：2007-08-16

申请号：US11673426

申请日：2007-02-09

Applicant: John Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven DenBaars ,  Shuji Nakamura

Inventor： John Kaeding ,  Hitoshi Sato ,  Michael Iza ,  Hirokuni Asamizu ,  Hong Zhong ,  Steven DenBaars ,  Shuji Nakamura

IPC: H01L21/04 ,  H01L29/15

CPC classification number: H01L21/2654 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract translation: （Al，In，Ga，B）N半导体晶体中受控p型导电性的方法。 实例包括在{011}方向沉积在{100} MgAl 2+ 4+尖晶石衬底上的{10 11} GaN膜。 可以有意地将Mg原子并入生长的半极性氮化物薄膜中以在半导体晶体的带结构中引入可用的电子态，导致p型导电性。 也可以使用导致类似的合适电子状态引入的其它杂质原子，例如Zn或C。

公开(公告)号：US20070184637A1

公开(公告)日：2007-08-09

申请号：US11697457

申请日：2007-04-06

Applicant: Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

Inventor： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/0242 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract translation: 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：US20070178689A1

公开(公告)日：2007-08-02

申请号：US11714890

申请日：2007-03-07

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L21/44

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US20070121690A1

公开(公告)日：2007-05-31

申请号：US10581940

申请日：2003-12-09

Applicant: Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

Inventor： Tetsuo Fujii ,  Yan Gao ,  Evelyn Hu ,  Shuji Nakamura

IPC: H01S5/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) (42) of the LED and a surface of the N-face (42) is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face (42) is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

Abstract translation: 一种氮化镓（GaN）基发光二极管（LED），其中通过LED的氮面（N面）（42）提取光，并且将N面（42）的表面粗糙化成一个或多个 六角形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面（42）的表面粗糙化，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US07220658B2

公开(公告)日：2007-05-22

申请号：US10537644

申请日：2003-07-15

Applicant: Benjamin A Haskell ,  Michael D. Craven ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

Inventor： Benjamin A Haskell ,  Michael D. Craven ,  Paul T. Fini ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01L21/20

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.

Abstract translation: 通过氢化物气相外延（HVPE）的非极性a面平面氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

公开(公告)号：US20070111531A1

公开(公告)日：2007-05-17

申请号：US11621482

申请日：2007-01-09

Applicant: Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

Inventor： Troy Baker ,  Benjamin Haskell ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC: H01L21/302

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  Y10S438/938

Abstract: A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate

Abstract translation: 一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。 平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{10 11}氮化镓（GaN），（2）{10 22}氮化镓 “100”蓝宝石衬底，以及（4）在{1 100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）

公开(公告)号：US20070102721A1

公开(公告)日：2007-05-10

申请号：US11593268

申请日：2006-11-06

Applicant: Steven DenBaars ,  Shuji Nakamura ,  Hisashi Masui ,  Natalie Fellows ,  Akihiko Murai

Inventor： Steven DenBaars ,  Shuji Nakamura ,  Hisashi Masui ,  Natalie Fellows ,  Akihiko Murai

IPC: H01L33/00

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/20 ,  H01L33/26 ,  H01L33/60

Abstract: An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

Abstract translation: 一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料 表面，进入成形塑料光学元件被抽取到空气中。

公开(公告)号：US07208393B2

公开(公告)日：2007-04-24

申请号：US11140893

申请日：2005-05-31

Applicant: Benjamin A. Haskell ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

Inventor： Benjamin A. Haskell ,  Melvin B. McLaurin ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

IPC: H01L21/36 ,  H01L21/20

CPC classification number: C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

Abstract: A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

Abstract translation: 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。