Invention Application
US20070184637A1 GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
有权
平面减少偏差密度的增长通过液相蒸发相外延的M-PLANE GALLIUM NITRIDE
- Patent Title: GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
- Patent Title (中): 平面减少偏差密度的增长通过液相蒸发相外延的M-PLANE GALLIUM NITRIDE
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Application No.: US11697457Application Date: 2007-04-06
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Publication No.: US20070184637A1Publication Date: 2007-08-09
- Inventor: Benjamin Haskell , Melvin McLaurin , Steven DenBaars , James Speck , Shuji Nakamura
- Applicant: Benjamin Haskell , Melvin McLaurin , Steven DenBaars , James Speck , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
Public/Granted literature
- US07956360B2 Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy Public/Granted day:2011-06-07
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