摘要:
A back contact solar cell comprises an active semiconductor absorber for use in a back contact solar cell having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization is positioned over the backside of the active semiconductor absorber. The first interdigitated metallization forming base and emitter contact metallization of the back contact solar cell. A backplane is positioned over the backside of the active semiconductor absorber and the first interdigitated metallization. A second interdigitated metallization is positioned over the backplane. The second interdigitated metallization is connected to the first interdigitated metallization for extracting photovoltaic power from the active semiconductor absorber. The second interdigitated metallization has base and emitter busbars over the backplane for electrical connection. An electronic component is electrically connected to at least a base busbar and at least an emitter busbar of the second interdigitated metallization. The electronic component has a bypass switch.
摘要:
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.
摘要:
A three-dimensional structure having a mixture of inverted pyramidal cavities and substantially flat areas defines the frontside and backside of a substrate. The substantially flat areas have ridges forming base openings of the inverted pyramidal cavities and planar linear regions across the substrate. Pyramidal sidewalls define the pyramidal cavities from the ridges to pyramidal apices. Metallization contacts emitter regions on the frontside of the substantially flat areas.
摘要:
Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
摘要:
Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要:
It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.
摘要:
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided. Emitter and base contact regions are formed on a backside of a semiconductor wafer having a light receiving frontside and a backside opposite said frontside. A first level contact metallization is formed on the wafer backside and an electrically insulating backplane is attached to the semiconductor wafer backside. Isolation trenches are formed in the semiconductor wafer patterning the semiconductor wafer into a plurality of electrically isolated isles and the semiconductor wafer is thinned. A metallization structure is formed on the electrically insulating backplane electrically connecting the plurality of isles.
摘要:
Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided.
摘要:
Solar module structures 210 and 270 and methods for assembling solar module structures. The solar module structures 210 and 270 comprise three-dimensional thin-film solar cells 110 arranged in solar module structures 210 and 270. The three-dimensional thin-film solar cell comprises a three-dimensional thin-film solar cell substrate (124 and 122, respectively) with emitter junction regions 1352 and doped base regions 1360. The three-dimensional thin-film solar cell further includes emitter metallization regions and base metallization regions. The 3-D TFSC substrate comprises a plurality of single-aperture or dual-aperture unit cells. The solar module structures 270 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of dual-aperture unit cells may be used in solar glass applications. The solar module structures 210 using three-dimensional thin-film solar cells comprising three-dimensional thin-film solar cell substrates with a plurality of single-aperture unit cells may be used in building façade and rooftop installation applications as well as for centralized solar electricity generation.
摘要:
Methods and structures for extracting at least one electric parametric value from a back contact solar cell having dual level metallization are provided.