公开(公告)号：US5889359A

公开(公告)日：1999-03-30

申请号：US781961

申请日：1996-12-20

Applicant: Nobuya Seko

Inventor： Nobuya Seko

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J1/02 ,  H01J1/30

CPC classification number: H01J3/022

Abstract: There is provided a field-emission type cold cathode including (a) a substrate at least a surface of which has electrical conductivity, (b) an insulating layer formed on the substrate, (c) an electrically conductive gate electrode formed on the insulating layer, (d) an almost conical, sharp-pointed emitter electrode disposed in a hole formed through the gate electrode and insulating layer, (e) a focusing electrode formed on the insulating layer so that the focusing electrode is located in the same plane as the gate electrode and surrounds the gate electrode, and (f) a feeder line formed in the same plane as the gate electrode. The feeder line extends from the gate electrode into the focusing electrode and being shaped complementarily with the focusing electrode so that the focusing electrode is present at every radial directions as viewed from a center of the emitter electrode. The present invention provides an electron source which has small divergence and has high axis-symmetry, and which can be fabricated by conventional field-emission type cold cathode fabrication methods having no focusing electrodes. Hence, the present invention makes it possible to provide a high-quality cathode at lower cost suitable for an electron source for an electronic tube and an electron beam emitter.

Abstract translation: 提供场致发射型冷阴极，其包括（a）至少其表面具有导电性的基板，（b）形成在基板上的绝缘层，（c）形成在绝缘层上的导电栅电极 ，（d）设置在通过栅电极和绝缘层形成的孔中的几乎圆锥形的尖锐的发射电极，（e）形成在绝缘层上的聚焦电极，使得聚焦电极位于与 并且围绕栅电极，（f）与栅电极形成在同一平面上的馈线。 馈电线从栅电极延伸到聚焦电极中并且与聚焦电极互补成形，使得从发射电极的中心观察，聚焦电极在每个径向存在。 本发明提供一种发散小，轴对称性高的电子源，可以通过没有聚焦电极的常规场致发射型冷阴极制造方法制造。 因此，本发明使得可以以适合于电子管和电子束发射体的电子源的较低成本来提供高质量的阴极。

公开(公告)号：US5850120A

公开(公告)日：1998-12-15

申请号：US676452

申请日：1996-07-08

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J3/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J3/022 ,  H01J2201/30407

Abstract: An electron gun includes a field emission cold cathode (1) having a first electric potential, a primary gate electrode (2) having a first opening around the top of the cathode (1) and having a second electric potential which is higher than the first electric potential for causing an electron emission from the top of the cathode (1), and a second gate electrode (3) having a second opening around the top of the cathode (1) and having a third electric potential which is higher than the first electric potential and lower than the second electric potential, wherein a first voltage defined as a difference between the first and the second electric potentials varies in proportion to a second voltage defined as a difference between the first and the third electric potentials so as to provide a current-voltage characteristic having an apparent gamma-property. The apparent gamma-property is such that the luminous output of a fluorescent substance (7) of an anode (8) is directly proportional to a signal voltage.

Abstract translation: 电子枪包括具有第一电位的场发射冷阴极（1），具有围绕阴极（1）的顶部的第一开口的主栅电极（2），并且具有比第一电位高的第一电位 用于从阴极（1）的顶部引起电子发射的电位;以及第二栅电极（3），其具有围绕阴极（1）的顶部的第二开口，并且具有比第一栅极 电位低于第二电位，其中，被定义为第一和第二电位之间的差的第一电压与被定义为第一和第三电位之间的差的第二电压成比例地变化，从而提供 具有表观伽马性质的电流 - 电压特性。 表观γ特性使得阳极（8）的荧光物质（7）的发光输出与信号电压成正比。

公开(公告)号：US5837331A

公开(公告)日：1998-11-17

申请号：US614703

申请日：1996-03-13

Applicant: Eric P. Menu ,  John Song ,  Bernard F. Coll

Inventor： Eric P. Menu ,  John Song ,  Bernard F. Coll

IPC: C23C14/06 ,  C23C14/54 ,  C23C16/34 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H05H1/24 ,  B05D1/36 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/342 ,  C23C14/0605 ,  C23C14/548 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/319

Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Abstract translation: 通过包括以下步骤的方法形成非晶多层结构（100,200）：i）将沉积基板（101）定位在物理气相沉积设备（300,400,500）中，ii）将 物理气相沉积装置（300,400,500）内的多相材料iv）调节离子的总离子冲击能量以沉积具有对应于总离子冲击能量值的预定特性的层。

公开(公告)号：US5836796A

公开(公告)日：1998-11-17

申请号：US548039

申请日：1995-10-25

Applicant: Joel Danroc

Inventor： Joel Danroc

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2329/00

Abstract: Process for the production of a field effect electron source and source obtained by said process, application to display means by cathodoluminescence. On an insulating substrate (2), said source comprises at least one cathode conductor (4), an insulating layer (6) covering the latter, at least one grid (8) formed on the insulating layer, holes (10) being formed through said grid and the insulating layer, and microtips (12) made from an electron emitting, metallic material, formed in said holes and covered with a deposit (13) of carbon diamond or diamond like carbon particles formed by electrophoresis or by joint electrochemical deposition of metal and carbon diamond or diamond like carbon.

Abstract translation: 用于生产通过所述方法获得的场效应电子源和源的方法，通过阴极发光应用于显示装置。 在绝缘基板（2）上，所述源极包括至少一个阴极导体（4），覆盖其上的绝缘层（6），形成在绝缘层上的至少一个格栅（8），穿过 所述栅格和绝缘层，以及由电子发射金属材料制成的微尖端（12），形成在所述孔中并覆盖有通过电泳形成的碳金刚石或类金刚石碳颗粒沉积物（13），或通过电化学沉积 金属和碳金刚石或类似钻石的碳。

公开(公告)号：US5834790A

公开(公告)日：1998-11-10

申请号：US824610

申请日：1997-03-27

Applicant: Kenichiro Suzuki

Inventor： Kenichiro Suzuki

IPC: H01J1/304 ,  B81B1/00 ,  H01J3/02 ,  H01L29/06

CPC classification number: B82Y15/00 ,  B81B1/008 ,  H01J3/022

Abstract: A vacuum microdevice having a field-emission cold cathode includes a first electrode having a projection portion formed on its surface, the projection having a sharp tip, an insulating film formed in the region of the first electrode, excluding the sharp tip of the projection portion, a second electrode formed in a region on the insulating film, excluding the sharp tip of the projection portion, to planarize the surface of the second electrode, and a structural substrate bonded to the lower surface of the first electrode and having a recess portion in the bonding surface with the lower surface of the first electrode, the recess portion having a size large enough to cover a recess reflecting the sharp tip of the projection portion formed on the lower surface of the first electrode. The interior of the recess portion formed in the structural substrate communicates with the atmosphere outside the device. A support structure is formed on the surface of the second electrode to surround each projection portion formed on the first electrode. With this structure, a vacuum microdevice which can suppress variations in characteristics due to voids, and exhibit excellent long-term reliability can be provided.

Abstract translation: 具有场发射冷阴极的真空微型装置包括具有形成在其表面上的突起部分的第一电极，具有尖锐尖端的突起，在第一电极的区域中形成的绝缘膜，除了突起部分的尖端 ，形成在所述绝缘膜上的除了所述突起部分的尖锐尖端之外的区域中的第二电极，以平坦化所述第二电极的表面;以及结构基底，其结合到所述第一电极的下表面，并且具有凹部 与第一电极的下表面的接合表面，凹部具有足够大的尺寸以覆盖形成在第一电极的下表面上的突出部的尖端的凹部。 形成在结构基材中的凹部的内部与装置外部的大气连通。 在第二电极的表面上形成支撑结构，以围绕形成在第一电极上的每个突出部分。 通过这种结构，可以提供能够抑制由空隙引起的特性变化并且显示优异的长期可靠性的真空微型装置。

公开(公告)号：US5828162A

公开(公告)日：1998-10-27

申请号：US546396

申请日：1995-10-20

Applicant: Joel Danroc ,  Danh Tran Van

Inventor： Joel Danroc ,  Danh Tran Van

IPC: H01J31/12 ,  G09F9/313 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J19/00

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: A field effect electron source includes a grid electrode formed over an insulating layer that covers a cathode electrode formed on an insulating substrate. Holes are provided in the grid electrode-insulating layer structure, the holes extending to the cathode electrode formed on the insulating substrate. Electron emitting microheaps are formed within the holes above the exposed portions of the cathode electrode on the substrate. These microheaps each include at least a macropile of carbon diamond or diamond like carbon powder grains surrounded by the sidewalls of the hole.

Abstract translation: 场效应电子源包括在覆盖形成在绝缘基板上的阴极电极的绝缘层上形成的栅电极。 在栅电极绝缘层结构中设置孔，孔延伸到形成在绝缘基板上的阴极电极。 电子发射微胶片形成在衬底上的阴极电极的暴露部分上方的孔内。 这些微盖板每个包括由孔的侧壁包围的至少一个碳金刚石或金刚石像碳粉颗粒的大孔。

公开(公告)号：US5825134A

公开(公告)日：1998-10-20

申请号：US870972

申请日：1997-06-06

Applicant: Fuminori Ito

Inventor： Fuminori Ito

IPC: H01J9/44 ,  G09G3/22 ,  H01J1/304 ,  H01J3/02 ,  H01J23/04

CPC classification number: G09G3/22 ,  H01J3/022

Abstract: A field emission cathode has an emitter tip, on a conductive layer, disposed within holes that are formed through an insulating layer deposited on the conductive layer and a gate layer deposited on the insulating layer, respectively. A method according to the present invention comprises the step of applying to the gate layer an activation voltage to activate the emitter tip before operating the field emission cathode with operating gate voltages. The activation voltage is greater than any one of the operating gate voltages but less than a dielectric breakdown voltage.

Abstract translation: 场致发射阴极具有位于导电层上的发射极尖端，该发射极尖端设置在分别通过沉积在导电层上的绝缘层和沉积在绝缘层上的栅极层形成的孔内。 根据本发明的方法包括在操作具有操作栅极电压的场发射阴极之前，向栅极层施加激活电压以激活发射极尖端的步骤。 激活电压大于任何一个工作栅极电压但小于绝缘击穿电压。

公开(公告)号：US5814931A

公开(公告)日：1998-09-29

申请号：US734695

申请日：1996-10-21

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J1/304 ,  D06M13/00 ,  G09G1/00 ,  G09G3/22 ,  H01J3/02 ,  H01J3/18 ,  H01J29/04 ,  H01J29/62 ,  H04N3/26 ,  H01J1/46

CPC classification number: H01J3/022

Abstract: The invention forms on a substrate an electron emission area composed of at least a single micro cold cathode which is composed of an emitter and a gate electrode, arranges plural focusing electrodes surrounding this electron emission area in the periphery of the electron emission area, and connects with each other the focusing electrodes facing each other around the electron emission area. An electron beam having a vertically long spot near the cathode is formed by making more intense the horizontal focusing when the electron beam is scanning the peripheral part of the screen on the basis of a horizontal and a vertical synchronizing signal. Thus the invention can correct distortion of the electron beam caused by deflection and can achieve and excellent resolution all over the display screen, and furthermore, can compose a cathode ray tube using this cold cathode as an electron source.

Abstract translation: 本发明在基板上形成由至少由发射极和栅电极构成的单个微冷阴极构成的电子发射区域，在电子发射区域的周围配置围绕该电子发射区域的多个聚焦电极，并连接 彼此相对地围绕电子发射区域彼此面对着聚焦电极。 当电子束基于水平和垂直同步信号扫描屏幕的周边部分时，通过使水平聚焦更强烈地形成具有靠近阴极的垂直长点的电子束。 因此，本发明可以校正由偏转引起的电子束的变形，并且可以在整个显示屏上实现和优异的分辨率，此外，可以构成使用该冷阴极作为电子源的阴极射线管。

公开(公告)号：US5801477A

公开(公告)日：1998-09-01

申请号：US383410

申请日：1995-01-31

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L.ltoreq.(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”，其中L i =（s + r）/ 2。

公开(公告)号：US5786657A

公开(公告)日：1998-07-28

申请号：US840763

申请日：1997-04-16

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J3/022

Abstract: In a field emission electron gun including emitters (104) on predetermined parts of a substrate (409), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode, the emitters are formed on the substrate except a center part of the substrate. The first gate electrode has an inner peripheral surface which defines a hole (107) exposing a center portion of the insulator film that is positioned on the center part of the substrate. A second gate electrode (102) is formed on the insulator film to surround an outer peripheral surface of the first gate electrode with a distance left between the outer peripheral surface of the first gate electrode and the second gate electrode. A third gate electrode (106) may be formed on the center portion of the insulator film with another distance left between the inner peripheral surface of the first gate electrode and the third gate electrode.

Abstract translation: 在包括在基板（409）的预定部分上的发射体（104）的场致发射电子枪中，在所述基板的剩余部分上的绝缘膜（105），所述绝缘膜上的第一栅电极（101） 在每个发射极和第一栅电极之间留有空间的发射极，除了衬底的中心部分之外，发射体形成在衬底上。 第一栅电极具有内周面，其限定了露出位于基板的中心部分的绝缘膜的中心部分的孔（107）。 第二栅电极（102）形成在绝缘膜上，以围绕第一栅电极的外周表面，其间距离留在第一栅电极的外周表面和第二栅电极之间。 第三栅电极（106）可以形成在绝缘膜的中心部分上，在第一栅电极的内周表面和第三栅电极之间留有另一距离。