摘要:
A high dynamic range sensitive sensor array is described which uses a combination of pixel structures, some of which incorporating phase domain integration techniques to accurately capture high and low intensity images. The sensor elements included as many of the pixel structures in the sensor array are not limited by dynamic range characteristics exhibited by prior art solid-state pixel structures and is thus capable of capturing a full spectrum of electromagnetic radiation to provide a high quality output image.
摘要:
An imaging device (1) including; a fluctuation correcting section (13) for correcting fluctuation of the input/output characteristics of the imaging element (4), and the linearizing section (14) for converting the signals outputted from the imaging element (4) into the state where the output signals are uniformly converted by one conversion characteristic. The fluctuation correcting section (13) is provided with a first correcting section (13a) for correcting fluctuation based on a computing equation obtained by modeling a plurality of kinds of conversion characteristic, and a second correcting section (13b) for correcting the output signals in a region close to a switch point of a plurality of kinds of conversion characteristics among the output signals whose fluctuations are corrected by the first correcting section (13a), by using model equations of two characteristics on the sides of the switch point, so that the output signal overlaps the characteristic of the imaging element (4).
摘要:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.
摘要:
A signal charge corresponding to an incident light quantity is accumulated in a first node of each pixel circuit. An accumulated charge exhaust circuit includes each of first nodes of the plurality of pixel circuits belonging to the same pixel group, and a second node connected through discharge gates functioning as variable resistance elements. Second node functions as a floating drain during an ON period of a control switch, while accumulating the signal charge overflowing from each pixel circuit, in a capacitor during an OFF period of control switch provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate is lowered in response to an increase of the signal charge accumulated in capacitor, so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.
摘要:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.
摘要:
There is provided a solid-state image sensing device including a pixel section in which cells are arrayed, each cell including a photoelectric conversion unit, a reading circuit reading out, to a detection unit, signal charges obtained by the photoelectric conversion unit, an amplifying circuit amplifying and outputting a voltage corresponding to the signal charges, and a reset circuit resetting the signal charges, an exposure time control circuit controlling an exposure time and controlling the exposure time to be equal for all cells, an A/D conversion circuit A/D-converting a signal output from the pixel section by changing a resolution of a signal level, line memories storing an A/D-converted signal, and a signal processing circuit processing output signals from the line memories to have a linear gradient with respect to an optical input signal amount by controlling an amplification factor in accordance with a resolution of a pixel output signal after A/D-conversion.
摘要:
A sense node voltage relating to light intensity incident upon a light-detecting element is measured. To realize this measurement, a first integration reset pulse is generated to enable a resetting of the sense node voltage to a voltage value substantially equal to a reset voltage value associated with the first integration reset pulse, an edge of the first integration reset pulse triggering a beginning of a first integration period. Thereafter, a second integration reset pulse is generated to enable a resetting of the sense node voltage to a voltage value substantially equal to a reset voltage value associated with the second integration reset pulse, an edge of the second integration reset pulse triggering a beginning of a second integration period. Subsequent to the generation of the first integration reset pulse and prior to the generation of the second integration reset pulse, a plurality of intra-period reset pulses is generated to enable resetting of the sense node voltage to a plurality of voltage values, each voltage value being substantially equal to a reset voltage value associated with the generated intra-period reset pulse. The sense node voltage generated in response to incident light intensity is measured only once during an integration period, wherein this measurement takes place subsequent to the generation of the plurality of intra-period reset pulses and prior to the generation of the second integration reset pulse.
摘要:
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components.
摘要:
A high dynamic range sensitive sensor array is described which uses a combination of pixel structures, some of which incorporating phase domain integration techniques to accurately capture high and low intensity images. The sensor elements included as many of the pixel structures in the sensor array are not limited by dynamic range characteristics exhibited by prior art solid-state pixel structures and is thus capable of capturing a full spectrum of electromagnetic radiation to provide a high quality output image.
摘要:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.