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71.发明授权Optoelectronic semiconductor chip having a plurality of active regions arranged alongside one another 有权具有彼此并排设置的多个有源区的光电子半导体芯片公开(公告)号：US09299897B2
公开(公告)日：2016-03-29
申请号：US14428333
申请日：2013-09-19
发明人： Lutz Höppel , Alexander F. Pfeuffer
CPC分类号： H01L33/56 , H01L27/156 , H01L33/0016 , H01L33/08 , H01L33/405 , H01L33/44 , H01L33/60
摘要： An optoelectronic semiconductor chip is disclosed. The optoelectronic semiconductor chip includes a semiconductor layer sequence having an active zone suitable for emitting radiation, a carrier substrate, and a mirror layer, the mirror layer being arranged between the semiconductor layer sequence and the carrier substrate, wherein the semiconductor layer sequence is subdivided into a plurality of active regions arranged alongside one another, wherein the plurality of active regions are separated from one another in each case by a trench in the semiconductor layer sequence, wherein the trench in each case severs the semiconductor layer sequence and the mirror layer, wherein the mirror layer has side surfaces facing a trench and side surfaces facing an outer side of the semiconductor chip, wherein the side surfaces of the mirror layer that face an outer side of the semiconductor chip have a metallic encapsulation layer.
摘要翻译： 公开了一种光电半导体芯片。 光电子半导体芯片包括具有适于发射辐射的有源区的半导体层序列，载体衬底和镜像层，镜层布置在半导体层序列和载体衬底之间，其中半导体层序列被细分为 多个有源区域彼此并排布置，其中多个有源区域在每种情况下都分别由半导体层序列中的沟槽分开，其中沟槽在每种情况下都分开半导体层序列和镜面层，其中 镜层具有面向沟槽的侧表面和面向半导体芯片的外侧的侧表面，其中面对半导体芯片的外侧的镜面层的侧表面具有金属封装层。
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公开(公告)号：US09117970B2
公开(公告)日：2015-08-25
申请号：US13574333
申请日：2011-01-21
CPC分类号： H01L33/34 , H01L33/0016
摘要： A light emitting device (10) comprises a body (11) comprising a substrate (12) of a p-type semiconductor material. The substrate has an upper surface (14) and having formed therein on one side of the upper surface and according to a bulk semi-conductor fabrication process utilizing lateral active area isolation techniques: a first n+-type island (16) to form a first junction (24) between the first island and the substrate; and a second n+-type island (18) spaced laterally from the first island (16). The substrate provides a laterally extending link (20) between the islands having an upper surface. The upper surface of the link, an upper surface of the island (16) and an upper surface of the island (18) collectively form a planar interface (21) between the body (11) and an isolation layer (19) of the device. The device comprises a terminal arrangement to apply a reverse bias to the first junction, to cause the device to emit light. The device is configured to facilitate the transmission of the emitted light.
摘要翻译： 发光器件（10）包括包括p型半导体材料的衬底（12）的主体（11）。 衬底具有上表面（14），并且在上表面的一侧上形成并且根据利用横向有源区隔离技术的体半导体制造工艺：第一n +型岛（16），以形成第一 第一岛和基底之间的接合部（24）; 以及与第一岛（16）横向间隔开的第二n +型岛（18）。 衬底在具有上表面的岛之间提供横向延伸的连杆（20）。 链节的上表面，岛（16）的上表面和岛（18）的上表面在主体（11）和装置的隔离层（19）之间共同形成平面界面（21） 。 该装置包括用于向第一结施加反向偏压以使器件发光的端子装置。 该装置被配置为便于发射的光的传输。
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公开(公告)号：US09105828B2
公开(公告)日：2015-08-11
申请号：US14334164
申请日：2014-07-17
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，包括第一表面，与第一表面相对的第二表面和发光层; p侧电极，设置在包括发光层的区域中的半导体层的第二表面上; 在不包括发光层的区域中设置在半导体层的第二表面上的n侧电极; 绝缘膜比半导体层更柔性，设置在第二表面上的绝缘膜和半导体层的侧表面，绝缘膜具有到达p侧电极的第一开口和到达p侧电极的第二开口， 侧电极; p侧互连层，设置在绝缘膜上并连接到p侧电极; 以及设置在绝缘膜上并连接到n侧电极的n侧互连层。
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公开(公告)号：US20150179872A1
公开(公告)日：2015-06-25
申请号：US14409340
申请日：2013-05-30
发明人： Zi-Hui Zhang , Swee Tiam Tan , Xiaowei Sun , Hilmi Volkan Demir
CPC分类号： H01L33/0016 , H01L33/005 , H01L33/04 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/40
摘要： A light emitting device comprising a plurality of current spreading layers including a first P doped layer, a first N doped layer and a second P doped layer, wherein the N doped layer having a doping level and thickness configured for substantial depletion or full depletion.
摘要翻译： 一种包括多个电流扩展层的发光器件，包括第一P掺杂层，第一N掺杂层和第二P掺杂层，其中所述N掺杂层具有被配置为实质耗尽或完全耗尽的掺杂水平和厚度。
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公开(公告)号：US20140329348A1
公开(公告)日：2014-11-06
申请号：US14334164
申请日：2014-07-17
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/0008 , H01L33/0016 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/56 , H01L2933/0016 , H01L2933/005 , H01L2933/0066 , Y10S438/94
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode.
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76.发明授权Light-emitting chip, light-emitting device, print head and image forming apparatus 有权发光芯片，发光装置，打印头和图像形成装置公开(公告)号：US08786646B2
公开(公告)日：2014-07-22
申请号：US13084058
申请日：2011-04-11
申请人： Taku Kinoshita , Yoshinao Kondoh , Seiji Ohno
发明人： Taku Kinoshita , Yoshinao Kondoh , Seiji Ohno
IPC分类号： B41J2/385 , G03G15/04 , H01L27/15 , G03G15/32 , B41J2/41 , B41J2/45 , G03G13/04 , G01D15/06 , G11B3/00 , H01L29/205 , H01L29/207 , H01L33/00
CPC分类号： G03G15/04036 , G03G15/04054 , G03G15/326 , H01L27/15 , H01L27/153 , H01L33/0016
摘要： A light-emitting chip includes: a substrate; plural light-emitting elements arrayed in line on the substrate, each of the light-emitting elements including a light-emitting region having a length in an array direction of the array different from a length in a direction orthogonal to the array direction; and a light-up current supplying interconnection including plural connecting portions, each of the connecting portions being provided on the light-emitting region of a corresponding one of the light-emitting elements in a shorter direction of the light-emitting region either the array direction or the direction orthogonal to the array direction, each of the connecting portions being connected to an electrode provided on the light-emitting region, the light-up current supplying interconnection supplying a current for lighting up to the plural light-emitting elements through the plural connecting portions.
摘要翻译： 发光芯片包括：基板; 在基板上排列成多个发光元件，每个发光元件包括沿阵列方向的长度在与阵列方向正交的方向上的长度不同的发光区域; 以及包括多个连接部分的点亮电流供应互连，每个连接部分在发光区域的较短方向上的相应一个发光元件的发光区域上设置阵列方向 或与阵列方向正交的方向，每个连接部分连接到设置在发光区域上的电极，所述点亮电流供应互连件通过所述多个发光元件提供用于点亮多个发光元件的电流 连接部分。
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77.发明授权Light-emitting element, self-scanning light-emitting element array, optical writing head, and image forming apparatus 有权发光元件，自扫描发光元件阵列，光学写入头和图像形成装置公开(公告)号：US08759859B2
公开(公告)日：2014-06-24
申请号：US13562673
申请日：2012-07-31
申请人： Taku Kinoshita , Kazutaka Takeda , Takashi Kondo , Hideo Nakayama
发明人： Taku Kinoshita , Kazutaka Takeda , Takashi Kondo , Hideo Nakayama
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0016 , H01L33/10 , H01L33/14 , H01L33/20 , H01L33/30
摘要： Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.
摘要翻译： 公开了一种发光元件，包括半导体衬底，形成在半导体衬底上的岛结构，至少包括电流限制层和p型和n型半导体层，形成在岛状结构中的发光晶闸管， 具有pnpn结构，以及形成在岛状结构中并具有pnpn结构的移位晶闸管，其中具有使得沟槽部分至少达到电流限制层的深度的沟槽部分形成在所述移位晶闸管的形成区域 岛结构和发光晶闸管的形成区域，以及从岛状结构的侧面选择性地氧化的氧化区域和沟槽部分的侧面形成在电流限制层中。
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公开(公告)号：US20140036949A1
公开(公告)日：2014-02-06
申请号：US13948084
申请日：2013-07-22
发明人： Gabriel Walter , Nick Holonyak, JR. , Milton Feng , Chao-Hsin Wu
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/0016 , H01L33/06 , H01L33/30 , H01S5/0425 , H01S5/06203 , H01S5/06213 , H01S5/18311 , H01S5/1835 , H01S5/34313
摘要： A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween.
摘要翻译： 一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域， 至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。
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公开(公告)号：US20120249009A1
公开(公告)日：2012-10-04
申请号：US13506626
申请日：2012-05-03
申请人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
发明人： Gabriel Walter , Milton Feng , Nick Holonyak, JR. , Han Wui Then , Chao-Hsin Wu
CPC分类号： H01S5/06203 , B82Y20/00 , H01L33/0016 , H01L33/30 , H01L33/38 , H01S5/06213 , H01S5/183 , H01S5/1835 , H01S5/34313
摘要： A method including: providing a transistor structure that includes a base region of first semiconductor type between semiconductor emitter and collector regions of second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with emitter, base, and collector regions; applying electrical signals, including a high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including a high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.
摘要翻译： 一种方法，包括：提供晶体管结构，所述晶体管结构包括在半导体发射极和第二半导体类型的集电极区之间的第一半导体类型的基极区; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量的电信号，以在量子尺寸区域辅助下产生从基极区域输出的自发光发射，包括高频的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。
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80.发明申请公开(公告)号：US20120242771A1
公开(公告)日：2012-09-27
申请号：US13189943
申请日：2011-07-25
申请人： Hideki FUKUNAGA
发明人： Hideki FUKUNAGA
CPC分类号： H01L33/0016 , B41J2/451 , H01L33/08 , H01L33/105
摘要： A light-emitting thyristor includes a substrate, a first semiconductor multi-layered mirror of a first conductivity type that is formed on the substrate, a gate layer that is formed on the first semiconductor multi-layered mirror by stacking a plurality of semiconductor light-emitting layers having different peak values of an emission wavelength, and a second semiconductor multi-layered mirror of a second conductivity type that is formed on the gate layer.
摘要翻译： 发光晶闸管包括基板，形成在基板上的第一导电类型的第一半导体多层反射镜，通过堆叠多个半导体发光晶体管形成在第一半导体多层反射镜上的栅极层， 具有不同发射波长峰值的发光层和形成在栅极层上的第二导电类型的第二半导体多层反射镜。
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