Abstract:
Provided is a method of driving an electron emission apparatus used in displays, imaging devices, flat-surface light sources and the like which can restrain a change with time. The method drives the electron emission apparatus including a plurality of electron emission devices each having an electron supply layer formed of silicon, a silicon-based mixture or a compound thereof, an insulator layer formed on the electron supply layer and a thin film metal electrode formed on the insulator layer, the plurality of electron emission devices being sealed and comprises: a driving step for supplying power between the electron supply layer and the thin film metal electrode to cause electrons to be emitted from the electron emission device and a reactivating step for applying a reactivating voltage at a level equal to or higher than an applied voltage value which causes discontinuity in differential value of the device current flowing between the electron supply layer and the thin film metal electrode with respect to the applied voltage after the driving step.
Abstract:
There is provided an electron emitting device, including a substrate, a pair of electrodes formed on the substrate and spaced apart from each other, a pair of electrically conductive layers formed on the electrodes, respectively, a distance between the electrically conductive layers being shorter than a distance between the electrodes, and an electron emitting layer formed between the electrically conductive layers and containing carbon and tin.
Abstract:
An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
Abstract:
A surface electron emission device array and a TFT inspection system for inspecting a TFT array using a surface electron emission device array may be provided. The TFT inspection system may include a surface electron emission device array, which may have a first electrode disposed to face the TFT array in a first direction, a second electrode disposed in a second direction intersecting the first direction in a region corresponding to a region in which the first electrode and a corresponding pixel electrode of the TFT array may be formed, and an insulating layer interposed between the first electrode and the second electrode.
Abstract:
A photonic assisted emitter including an at least partially transparent electron source layer, a thin metal layer; and a tunneling layer disposed between said at least partially transparent electron source layer and said thin metal layer.
Abstract:
An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
Abstract:
An electron-emitting apparatus includes an emitter section made of a dielectric material, lower electrodes, upper electrodes having micro through holes, insulating layers disposed on the upper surface of the emitter section and between the adjacent upper electrodes, and focusing electrodes to which a predetermine potential is applied and which are disposed on the insulating layers. The electron-emitting apparatus applies a negative potential to the upper electrode to accumulate electrons in the emitter section and then applies a positive potential to the upper electrode. As a result, the polarization of the emitter section is reversed, and the accumulated electrons are emitted through the micro through holes in the upper electrodes by Coulomb repulsion. Owing to electric fields generated by the focusing electrodes, the emitted electrons travel in the upward direction of the upper electrode without spreading into a shape of a cone.
Abstract:
An electron source apparatus includes a plurality of electron emission portions arranged in a matrix on a Si substrate, and a plurality of emitter lines and a plurality of gate lines that are orthogonal to each other, and each of the plurality of electron emission portions being controlled by signals from the plurality of emitter lines and the plurality of gate lines to perform an independent electron emission operation. Furthermore, device isolation regions are provided surrounding the respective plurality of emitter lines, contact holes are formed in the respective plurality of emitter lines, a plurality of emitter line mounting electrodes that correspond to the respective plurality of emitter lines are provided in a region outside regions that are surrounded by the device isolation regions, and conductors that are connected to the respective plurality of emitter line mounting electrodes are connected via the contact holes to the respective plurality of emitter lines corresponding to the respective plurality of emitter line mounting electrodes. Accordingly, the electron source apparatus can achieve high density and size reduction.
Abstract:
An electron emission device is provided which has sufficient on/off characteristics and is capable of efficiently emitting electrons with a low voltage. An electron emission device includes a substrate, a cathode electrode, a gate electrode, which are arranged on the substrate, an insulation layer covering the surface of the cathode electrode, and a dipole layer formed by terminating the surface of the insulation layer with hydrogen.
Abstract:
A display having hot electron type electron sources displaying an image by a line sequential scanning scheme is provided to prevent poor brightness uniformity along scan lines. The hot electron type electron source is provided with a top electrode bus line serving as a scan line and a bottom electrode bus line serving as a data line. The top electrode bus line has a sheet resistance lower than that of the bottom electrode. The wire sheet resistance of the scam line can be reduced to several m/square. When forming a 40 inch large screen FED using the hot electron type electron sources, a voltage drop amount produced in the scan line can be suppressed below an allowable range. As a result, high quality image without poor brightness uniformity can be obtained.