MEMS pressure sensor
    71.
    发明授权
    MEMS pressure sensor 有权
    MEMS压力传感器

    公开(公告)号:US08256298B2

    公开(公告)日:2012-09-04

    申请号:US12900398

    申请日:2010-10-07

    CPC classification number: G01L9/0019 G01L21/22

    Abstract: A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10−6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.

    Abstract translation: 用于感测MEMS器件的密封腔中的压力的​​MEMS压力传感器包括具有包括开口阵列的压力传感器谐振元件的谐振MEMS器件。 谐振MEMS器件的谐振频率是空腔中的压力的​​函数,谐振频率随压力而增加。 在0至0.1kPa的压力范围内,频率的平均变化至少为10-6 / Pa。 本发明基于对于快速振荡的认识,弹性力使谐振频率发生变化。 因此,可以通过对压力敏感的共振频率的装置感测压力。

    HEAT CONDUCTION-TYPE BAROMETRIC SENSOR UTILIZING THERMAL EXCITATION
    72.
    发明申请
    HEAT CONDUCTION-TYPE BAROMETRIC SENSOR UTILIZING THERMAL EXCITATION 有权
    热传导型热电偶传感器

    公开(公告)号:US20120118060A1

    公开(公告)日:2012-05-17

    申请号:US13060183

    申请日:2009-08-21

    Inventor: Mitsuteru Kimura

    CPC classification number: G01L21/14 G01L9/0019 G01L11/002

    Abstract: A heat conduction type barometric sensor has high sensitivity and high accuracy that has simple structure and circuit configuration and can measure a barometric pressure in the range of a very low barometric pressure to ≧1 atm using one sensor chip. The sensor includes a cantilever-shaped thin film provided with a thin-film temperature sensor, a heating element, and an excitation element. The excitation element utilizes warpage and bending based on a difference in thermal expansion between two main layers constituting the thin film during intermittent heating by a thin-film heater as the heating element. The two main layers are a silicon layer and a thermally oxidized film of silicon which are significantly different from each other in the coefficient of thermal expansion. A circuit in which the sensitivity is enhanced by the integration of a seebeck current for a predetermined period of time can be also provided.

    Abstract translation: 导热式气压传感器灵敏度高,精度高,结构简单,电路结构简单,可以使用一个传感器芯片测量大气压至≧1 atm范围内的大气压力。 传感器包括设置有薄膜温度传感器,加热元件和激励元件的悬臂形薄膜。 励磁元件基于由作为加热元件的薄膜加热器间歇加热期间构成薄膜的两个主层之间的热膨胀差异而使用翘曲和弯曲。 两个主要层是在热膨胀系数中彼此显着不同的硅层和硅的热氧化膜。 还可以提供通过在一段预定时间段内整合看见电流来提高灵敏度的电路。

    Pressure sensor with expanding member
    74.
    发明授权
    Pressure sensor with expanding member 失效
    带扩展构件的压力传感器

    公开(公告)号:US07418870B2

    公开(公告)日:2008-09-02

    申请号:US11352629

    申请日:2006-02-13

    CPC classification number: G01L15/00 G01L9/0019 G01L9/065 G01L9/125 G01L19/04

    Abstract: Systems and methodologies that provide for multi-parameter sensing via micro fabricated sensing structures operatively connected to oscillators, each micro-fabricated sensing structure in part defines a frequency of a respective associated oscillator. Output from such oscillators can be combined together, and then AC coupled with an incoming DC voltage that feeds the oscillators. The wiring arrangement includes two conducting paths/wires that carry a direct current to the oscillators as well as outputting the combined signal to external measurement devices. In addition, arrangements for pressure sensors are provided that mitigate errors from temperature variations and the induced stress/strains.

    Abstract translation: 通过可操作地连接到振荡器的微制造感测结构提供多参数感测的系统和方法,每个微制造的感测结构部分地限定相应的相关振荡器的频率。 来自这种振荡器的输出可以组合在一起,然后与馈送振荡器的输入DC电压耦合。 布线布置包括两个传导路径/导线,其将直流电流传送到振荡器,以及将组合的信号输出到外部测量装置。 此外,还提供了用于减轻温度变化和诱发的应力/应变的误差的压力传感器的布置。

    Pressure sensor
    75.
    发明授权
    Pressure sensor 失效
    压力传感器

    公开(公告)号:US07059192B2

    公开(公告)日:2006-06-13

    申请号:US10971885

    申请日:2004-10-22

    CPC classification number: G01L9/0016 G01L9/0019 G01L21/22

    Abstract: A pressure sensor is a micro-electro-mechanical vibrating device, with a silicon substrate (15; 15′) onto which a single-layer or multilayer vibrating assembly (121; 221; 321) is formed. It comprises an electrode (21; 21′), which makes the assembly to oscillate relative to the substrate at the resonance frequency or at another known frequency, and a detector for detecting the actual frequency and/or amplitude of said oscillation. The actual frequency and/or amplitude are affected by the conditions, in particular the pressure, of the external environment and the variations of the frequency and amplitude with respect to the values set by the electrode is used to measure pressure variations in the surrounding environment.

    Abstract translation: 压力传感器是微电子机械振动装置,其上形成有单层或多层振动组件(121; 221; 321)的硅衬底(15; 15')。 它包括一个电极(21; 21'),它使组件以共振频率或另一已知频率相对于衬底振荡;以及检测器,用于检测所述振荡的实际频率和/或振幅。 实际的频率和/或振幅受外部环境的条件,特别是压力的影响,并且相对于由电极设定的值的频率和振幅的变化用于测量周围环境中的压力变化。

    Resonator chip sensor for pressure and force with mechanically separate partial regions (slots) and a soft membrane
    77.
    发明申请
    Resonator chip sensor for pressure and force with mechanically separate partial regions (slots) and a soft membrane 审中-公开
    用于压力和力的谐振器芯片传感器,具有机械分离的部分区域(狭槽)和软膜

    公开(公告)号:US20040011144A1

    公开(公告)日:2004-01-22

    申请号:US10416369

    申请日:2003-05-12

    CPC classification number: G01L9/0019 G01L1/183

    Abstract: A sensor to reduce the loads due to different thermal expansions between a chip containing the sensing element, said chip preferably consisting of silicon, and the housing, typically made of steel, which can falsify the measuring results. The chip includes central and lateral fixations, which are mechanically decoupled from each other and are arranged on that end of the sensing element where the force application occurs.

    Abstract translation: 一种传感器,用于减少由于包含感测元件的芯片,所述芯片优选由硅构成的芯片与通常由钢制成的壳体之间的不同热膨胀的负载,这可能会损坏测量结果。 芯片包括中心和侧向固定,它们彼此机械地分离并且布置在感测元件的施加力的地方。

    Integratable transducer structure
    78.
    发明授权
    Integratable transducer structure 有权
    可集成传感器结构

    公开(公告)号:US06552404B1

    公开(公告)日:2003-04-22

    申请号:US09836809

    申请日:2001-04-17

    CPC classification number: G01L9/0073 G01L9/0019

    Abstract: Electro-mechanical structures and methods for forming same are disclosed. The structures are integratable onto an integrated circuit. The structures have a deformeable element formed in a plane substantially perpendicular to the substrate of the integrated circuit.

    Abstract translation: 公开了机电结构及其形成方法。 该结构可集成到集成电路上。 该结构具有形成在基本上垂直于集成电路的基板的平面中的可变形元件。

    Micromechanical pressure sensor-with improved range
    79.
    发明授权
    Micromechanical pressure sensor-with improved range 失效
    微机械压力传感器 - 具有改进的范围

    公开(公告)号:US5939635A

    公开(公告)日:1999-08-17

    申请号:US982769

    申请日:1997-12-02

    Inventor: Jacob H. Martin

    CPC classification number: G01L9/0019 G01L21/22

    Abstract: The workable range is extended into lower pressure region for micromechanical pressure sensors of the kind having a vibrating mass in proximity of a stationary surface by increasing the amount of squeeze damping. The amount of squeeze damping is increased by using the symmetry of a circular disk-shaped vibrating mass and restricting or changing the flow path of the gas in and out of a squeeze damping space. A circular vibrating mass is supported through an annular spring by a support ring attached to the substrate surface by a plurality of mesas which serve to block the gas flow into and out of the squeeze damping space between the mass and the substrate surface. The amount of squeeze damping may be increased by providing the support ring which completely encloses the squeeze damping space with the vibrating mass having a hole through which the gas may enter and leave the space. A top electrode may be provided above and in close proximity of the vibrating mass to achieve smaller clearances between the substrate electrode and the mass. The vibrating mass may be caused to vibrate parallel to the surface of the substrate in conjunction with a top electrode to measure higher pressures.

    Abstract translation: 通过增加挤压阻尼量,将可操作范围扩展到具有振动质量接近固定表面的微机械压力传感器的较低压力区域。 通过使用圆盘形振动块的对称性并限制或改变气体进出挤压阻尼空间的流动路径来增加挤压阻尼量。 圆形振动块通过环形弹簧被支撑环支撑,所述支撑环通过多个台面连接到基板表面,所述多个台面用于阻挡气体进入和离开质量块和基板表面之间的挤压阻尼空间。 可以通过提供完全包围挤压阻尼空间的支撑环来增加挤压阻尼的量,振动块具有一个孔,气体可通过该孔进入并离开该空间。 顶部电极可以设置在振动块的上方并且紧邻振动块,以在基板电极和质量块之间实现更小的间隙。 振动块可能会与顶部电极一起平行于衬底的表面振动,以测量更高的压力。

    Transducer having a resonating silicon beam and method for forming same

    公开(公告)号:US5834333A

    公开(公告)日:1998-11-10

    申请号:US957401

    申请日:1997-10-23

    CPC classification number: G01P15/0802 G01L1/183 G01L9/0019 G01L9/0045

    Abstract: A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.

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