Abstract:
A MEMS pressure sensor for sensing the pressure in a sealed cavity of a MEMS device, comprises a resonant MEMS device having a pressure sensor resonator element which comprises an array of openings. The resonant frequency of the resonant MEMS device is a function of the pressure in the cavity, with resonant frequency increasing with pressure. Over the pressure range 0 to 0.1 kPa, the average change in frequency is at least 10−6/Pa. The invention is based on the recognition that for fast oscillation, the elastic force causes the resonance frequency to shift. Therefore, it is possible to sense the pressure by a device with resonance frequency that is sensitive to the pressure.
Abstract:
A heat conduction type barometric sensor has high sensitivity and high accuracy that has simple structure and circuit configuration and can measure a barometric pressure in the range of a very low barometric pressure to ≧1 atm using one sensor chip. The sensor includes a cantilever-shaped thin film provided with a thin-film temperature sensor, a heating element, and an excitation element. The excitation element utilizes warpage and bending based on a difference in thermal expansion between two main layers constituting the thin film during intermittent heating by a thin-film heater as the heating element. The two main layers are a silicon layer and a thermally oxidized film of silicon which are significantly different from each other in the coefficient of thermal expansion. A circuit in which the sensitivity is enhanced by the integration of a seebeck current for a predetermined period of time can be also provided.
Abstract:
A differential pressure sensing system is provided. The sensing system includes a membrane layer having a channel extending diametrically therein, and including one or more cavities provided radially outbound of the channel and at least one resonant beam disposed in the channel and configured to oscillate at a desired frequency. The system further includes sensing circuitry configured to detect oscillation of the at least one resonant beam indicative of deformation in the membrane layer.
Abstract:
Systems and methodologies that provide for multi-parameter sensing via micro fabricated sensing structures operatively connected to oscillators, each micro-fabricated sensing structure in part defines a frequency of a respective associated oscillator. Output from such oscillators can be combined together, and then AC coupled with an incoming DC voltage that feeds the oscillators. The wiring arrangement includes two conducting paths/wires that carry a direct current to the oscillators as well as outputting the combined signal to external measurement devices. In addition, arrangements for pressure sensors are provided that mitigate errors from temperature variations and the induced stress/strains.
Abstract:
A pressure sensor is a micro-electro-mechanical vibrating device, with a silicon substrate (15; 15′) onto which a single-layer or multilayer vibrating assembly (121; 221; 321) is formed. It comprises an electrode (21; 21′), which makes the assembly to oscillate relative to the substrate at the resonance frequency or at another known frequency, and a detector for detecting the actual frequency and/or amplitude of said oscillation. The actual frequency and/or amplitude are affected by the conditions, in particular the pressure, of the external environment and the variations of the frequency and amplitude with respect to the values set by the electrode is used to measure pressure variations in the surrounding environment.
Abstract:
An electronic component includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a cavity that penetrates from the first surface to the second surface of the semiconductor substrate, and an electrical mechanical element that has a movable portion formed above the first surface of the semiconductor substrate so that the movable portion is arranged above the cavity. The electronic component further includes an electric conduction plug, which penetrates from the first surface to the second surface of the semiconductor substrate, and which is electrically connected to the electrical mechanical element.
Abstract:
A sensor to reduce the loads due to different thermal expansions between a chip containing the sensing element, said chip preferably consisting of silicon, and the housing, typically made of steel, which can falsify the measuring results. The chip includes central and lateral fixations, which are mechanically decoupled from each other and are arranged on that end of the sensing element where the force application occurs.
Abstract:
Electro-mechanical structures and methods for forming same are disclosed. The structures are integratable onto an integrated circuit. The structures have a deformeable element formed in a plane substantially perpendicular to the substrate of the integrated circuit.
Abstract:
The workable range is extended into lower pressure region for micromechanical pressure sensors of the kind having a vibrating mass in proximity of a stationary surface by increasing the amount of squeeze damping. The amount of squeeze damping is increased by using the symmetry of a circular disk-shaped vibrating mass and restricting or changing the flow path of the gas in and out of a squeeze damping space. A circular vibrating mass is supported through an annular spring by a support ring attached to the substrate surface by a plurality of mesas which serve to block the gas flow into and out of the squeeze damping space between the mass and the substrate surface. The amount of squeeze damping may be increased by providing the support ring which completely encloses the squeeze damping space with the vibrating mass having a hole through which the gas may enter and leave the space. A top electrode may be provided above and in close proximity of the vibrating mass to achieve smaller clearances between the substrate electrode and the mass. The vibrating mass may be caused to vibrate parallel to the surface of the substrate in conjunction with a top electrode to measure higher pressures.
Abstract:
A method of forming apparatus including a force transducer on a silicon substrate having an upper surface, the silicon substrate including a dopant of one of the n-type or the p-type, the force transducer including a cavity having spaced end walls and a beam supported in the cavity, the beam extending between the end walls of the cavity, the method including the steps of: (a) implanting in the substrate a layer of a dopant of said one of the n-type or the p-type; (b) depositing an epitaxial layer on the upper surface of the substrate, the epitaxial layer including a dopant of the other of the n-type or the p-type; (c) implanting a pair of spaced sinkers through the epitaxial layer and into electrical connection with said layer, each of the sinkers including a dopant of the one of the n-type or the p-type; (d) anodizing the substrate to form porous silicon of the sinkers and the layer; (e) oxidizing the porous silicon to form silicon dioxide; and (f) etching the silicon dioxide to form the cavity and beam.