公开(公告)号：US20240347320A1

公开(公告)日：2024-10-17

申请号：US18755874

申请日：2024-06-27

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32146

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a bias power supply, and a radio-frequency power supply. The bias power supply is electrically coupled to the substrate support and generates electrical bias energy. The radio-frequency power supply is electrically connected to a radio-frequency electrode and generates source radio-frequency power to generate plasma from a gas within the chamber. The bias power supply changes a bias frequency of the electrical bias energy at least once during a process. The radio-frequency power supply changes a source frequency of the source radio-frequency power to reduce a degree of reflection of the source radio-frequency power within a waveform period of the electrical bias energy during the process.

公开(公告)号：US20240112895A1

公开(公告)日：2024-04-04

申请号：US18538165

申请日：2023-12-13

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32697 ,  H01L21/67248 ,  H01L21/6833 ,  H01J37/32642 ,  H01J2237/002 ,  H01J2237/24585

Abstract: The plasma processing apparatus includes a chamber body, a stage, a gas supply mechanism, a DC power supply, a radio-frequency power supply, and a controller. The gas supply is configured to supply a heat transfer gas to the upper surface of the electrostatic chuck. The controller is configured to control the DC power supply. The controller controls the DC power supply to apply, to the electrostatic chuck, a voltage derived by combining an output of a first function that outputs a smaller value as the absolute value of a self-bias voltage generated according to the plasma becomes larger and an output of a second function that outputs a larger value as the pressure of the heat transfer gas supplied to the upper surface of the electrostatic chuck by the gas supply increases.

公开(公告)号：US20240062991A1

公开(公告)日：2024-02-22

申请号：US18380239

申请日：2023-10-16

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32146 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/327

Abstract: A plasma processing apparatus comprises a chamber, a substrate support, a plasma generator, a bias power supply and a chuck power supply. The substrate support includes a base and a dielectric part. The base includes a base member and an electrode. The base member is made of a dielectric or an insulator. The electrode is formed on an upper surface of the base member. The electrode forms an upper surface of the base. The dielectric part provides a supporting surface on which a substrate is placed. The dielectric part extends from the upper surface of the base to the supporting surface and is made of only a dielectric. The bias power supply and the chuck power supply are electrically connected to the electrode of the base.

公开(公告)号：US20240006154A1

公开(公告)日：2024-01-04

申请号：US18448077

申请日：2023-08-10

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shin HIROTSU ,  Takenobu IKEDA ,  Koichi NAGAMI ,  Shinji HIMORI

IPC: H01J37/32 ,  H05H1/00 ,  H01H1/46

CPC classification number: H01J37/32183 ,  H01J37/32715 ,  H01H1/46 ,  H05H1/01 ,  H01J37/32568

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US20230402269A1

公开(公告)日：2023-12-14

申请号：US18238522

申请日：2023-08-28

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32715 ,  H01J37/32642 ,  H01J37/32568 ,  H01J37/3244 ,  H01J2237/1502 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; an edge ring disposed on the substrate support to surround a substrate on the substrate support; an actuator configured to vertically move the edge ring; a gas supply configured to supply a cleaning gas into the plasma processing chamber; a power source configured to supply a power to the substrate support; and a controller configured to: (a) maintain the edge ring at a first position spaced apart from the substrate support; and (b) supply a power to the substrate support while supplying the cleaning gas into the plasma processing chamber to generate a local plasma in a gap between the edge ring maintained at the first position and the substrate support, thereby cleaning the edge ring and the substrate support.

公开(公告)号：US20230369020A1

公开(公告)日：2023-11-16

申请号：US18227320

申请日：2023-07-28

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32568 ,  H01J2237/327 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply provides a pulse of bias energy to a bias electrode in each of a plurality of pulse periods. The radio-frequency power supply sets, based on a change in a degree of reflection of the source radio-frequency power, a source frequency of the source radio-frequency power in each of a plurality of phase periods in each of a plurality of overlap periods. Each of the plurality of overlap periods overlaps a corresponding pulse period of the plurality of pulse periods. The degree of reflection is identified with the source frequency being set differently in identical phase periods in two or more preceding overlap periods.

公开(公告)号：US20230360882A1

公开(公告)日：2023-11-09

申请号：US18350207

申请日：2023-07-11

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32 ,  H01J37/248

CPC classification number: H01J37/32082 ,  H01J37/248 ,  H01J37/32568

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

公开(公告)号：US20220384150A1

公开(公告)日：2022-12-01

申请号：US17828103

申请日：2022-05-31

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support including a bias electrode, an RF power source configured to generate RF power to generate plasma in the plasma processing chamber, an edge ring disposed to surround a substrate on the substrate support, a ring electrode disposed to surround the edge ring, a first bias RF power source and a second bias RF power source. The first bias RF power source is configured to supply a first bias RF power to the bias electrode, the first bias RF power having a first frequency and a first power level. The second bias RF power source is configured to supply a second bias RF power to the ring electrode, the second bias RF power having the first frequency and a second power level and the second bias RF power being synchronized with the first bias RF power.

公开(公告)号：US20220238313A1

公开(公告)日：2022-07-28

申请号：US17719858

申请日：2022-04-13

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: In an apparatus for plasma processing according to an exemplary embodiment, a radio frequency power source generates radio frequency power which is supplied for generation of a plasma. A bias power source supplies bias power to a lower electrode of a substrate support. The bias power varies a potential of a substrate within a cycle thereof. The radio frequency power is supplied in at least a part of a first period in the cycle, in which the potential of the substrate is relatively high. A power level of the radio frequency power is lowered in a second period in the cycle, in which the potential of the substrate is relatively low. In the first period and the second period, the sheath adjuster adjusts a position in a vertical direction of an upper end of a sheath above an edge ring.

公开(公告)号：US20220037129A1

公开(公告)日：2022-02-03

申请号：US17380624

申请日：2021-07-20

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source supplies radio frequency power. The bias power source supplies an electric to a bias electrode. An edge ring receives a part of the electric bias or another electric bias. An outer ring extends outside the edge ring in a radial direction and receives a part of the radio frequency power. A level of the radio frequency power is changed in synchronization with the electric bias within each cycle of the electric bias.