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公开(公告)号:US20210358532A1
公开(公告)日:2021-11-18
申请号:US17391639
申请日:2021-08-02
Inventor: Chia-Fu Lee , Hon-Jarn Lin , Po-Hao Lee , Ku-Feng Lin , Yi-Chun Shih , Yu-Der Chih
Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
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公开(公告)号:US20200066335A1
公开(公告)日:2020-02-27
申请号:US16544309
申请日:2019-08-19
Inventor: Yu-Der Chih , Chia-Fu Lee , Yi-Chun Shih , Hon-Jarn Lin , Ku-Feng Lin
Abstract: A method for sensing logical states of memory cells in multiple segments in a memory device, each cell having a high- and low-resistance state, resulting in different cell current levels for the different resistance states. The method includes determining target reference current levels for the respective segments, at least two of the target reference current levels being different from each other; generating a reference current for each segment with the target reference current level for that segment; comparing the cell current level for each cell to the reference current level for the segment the cell is in; and determining the logical states of the memory cells based on the comparison.
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公开(公告)号:US20190385656A1
公开(公告)日:2019-12-19
申请号:US16431158
申请日:2019-06-04
Inventor: Chia-Fu Lee , Hon-Jarn Lin , Po-Hao Lee , Ku-Feng Lin , Yi-Chun Shih , Yu-Der Chih
Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
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