公开(公告)号：US06429465B1

公开(公告)日：2002-08-06

申请号：US09656442

申请日：2000-09-06

Applicant: Shigeru Yagi ,  Toshihiko Suzuki ,  Nobuyuki Torigoe ,  Seiji Suzuki ,  Takeshi Iwanaga

Inventor： Shigeru Yagi ,  Toshihiko Suzuki ,  Nobuyuki Torigoe ,  Seiji Suzuki ,  Takeshi Iwanaga

IPC: H01L3300

CPC classification number: C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A nitride semiconductor device of high quality and excellent crystallinity and the method of manufacturing the same, wherein a nitride series compound semiconductor having at least an element belonging to the group IIIA and nitrogen is grown directly on a substrate, X-ray diffraction peaks of the nitride series compound semiconductor consist only of the peaks from the C-face of the hexagonal system, and the half width of an X-ray rocking curve at (0002) peak in the C-surface is 0.2 degrees of less, and wherein the method includes a step of introducing an organic metal compound at least containing a group IIIA element and a plasma activated nitrogen source into a reaction vessel to grow a nitride series compound semiconductor on the surface of a substrate, in which the ratio for the amount of the group IIIA element and nitrogen atom supplied (ratio for the number of atoms) is group IIIA element: nitrogen atom=1:50,000 to 1:1,000,000.

Abstract translation: 具有高品质和优异结晶度的氮化物半导体器件及其制造方法，其中具有至少一种属于IIIA族的元素的氮化物系列化合物半导体和氮气直接在衬底上生长，其中X射线衍射峰 氮化物系化合物半导体仅由来自六方晶系的C面的峰组成，C面的（0002）峰的X射线摇摆曲线的半宽度为0.2度以下，其中， 包括将至少含有IIIA族元素和等离子体活性氮源的有机金属化合物引入反应容器中以在基板的表面上生长氮化物系化合物半导体的步骤，其中所述基团的量 提供的IIIA元素和氮原子（原子数的比例）为IIIA族元素：氮原子= 1:500〜1:1000000。

公开(公告)号：US06268884B1

公开(公告)日：2001-07-31

申请号：US08889128

申请日：1997-07-07

Applicant: Shigeru Yagi ,  Nobuyuki Torigoe

Inventor： Shigeru Yagi ,  Nobuyuki Torigoe

IPC: H04N5208

CPC classification number: H04N1/41 ,  H04N5/208

Abstract: Light from a subject is divided by an optical system, one of which is focused on a receiving surface of a first image sensing device. The first image sensing device generates pixel information having low pixel density and multi-value for the image of the subject. The other light is transmitted to outline extracting means to generate an outline image. The outline image is picked up by a second image sensing device to generate binary pixel information having high pixel density for the outline image. The pixel information of the image and the pixel information of the outline are transmitted to an image reproduction processor via a data processor compose an image of high pixel density.

Abstract translation: 来自被摄体的光被光学系统划分，其中一个被聚焦在第一图像感测装置的接收表面上。 第一图像感测装置生成具有低像素密度和对于被摄体图像的多值的像素信息。 另外的光被传送到轮廓提取装置以产生轮廓图像。 轮廓图像由第二图像感测装置拾取，以生成轮廓图像具有高像素密度的二进制像素信息。 图像的像素信息和轮廓的像素信息经由数据处理器被发送到图像再现处理器，构成高像素密度的图像。

公开(公告)号：US5986285A

公开(公告)日：1999-11-16

申请号：US962836

申请日：1997-11-03

Applicant: Shigeru Yagi

Inventor： Shigeru Yagi

IPC: H01L29/20 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/20 ,  H01L33/18 ,  H01L29/04

CPC classification number: H01L31/20 ,  H01L29/2006 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/0392 ,  H01L33/18 ,  Y02E10/50

Abstract: The present invention provides an amorphous optical semiconductor characterized by having a ratio of the sum total number of atoms of group III elements to the number of nitrogen atoms, in the range of 1:0.5 to 1:2 while including a hydrogen. Preferable is the amorphous optical semiconductor comprising: hydrogen in the range of not less than 1 atomic % to not more than 50 atomic %; at least one selected from the group consisting of Al, Ga and In; oxygen and carbon each of not more than 15 atomic %; and nitrogen. In addition, the present invention provides a microcrystalline compound comprising: a microcrystallire compound containing hydrogen in the range of not less than 0.5 atomic % to not more than 40 atomic %; Ga; and nitrogen in the structure thereof. Moreover, the present invention provides an optical semiconductor element using these optical semiconductors as a photoconductive subtance.

Abstract translation: 本发明提供了一种非晶体光学半导体，其特征在于，在包含氢的同时，将III族元素的原子总数与氮原子数之比在1：0.5〜1：2的范围内。 优选的是非晶态半导体，其特征在于，含有1原子％以上且50原子％以下的氢; 选自Al，Ga和In中的至少一种; 氧和碳各自不超过15原子％; 和氮气。 此外，本发明提供一种微晶化合物，其包含：含有不小于0.5原子％至40原子％以下的氢的微晶化合物; Ga 和氮的结构。 此外，本发明提供一种使用这些光半导体作为光电导特性的光学半导体元件。

公开(公告)号：US5871085A

公开(公告)日：1999-02-16

申请号：US689151

申请日：1996-07-30

Applicant: Shigeru Yagi

Inventor： Shigeru Yagi

IPC: B65G15/28 ,  B65G21/06 ,  B65G23/08 ,  B65G23/10 ,  B65G23/12 ,  B65G23/22 ,  B65G23/44 ,  B65G23/04

CPC classification number: B65G23/22 ,  B65G23/08 ,  B65G23/12

Abstract: The belt driving device of the present invention has left and right frames (5, 15) which upper ends are connected by a slide bed (16), an endless belt (20) being latched by a head pulley (21) which is disposed on a head end of frames (5, 15) and a tail pulley (21) disposed on a tail end thereof, and an actuator unit (12) of the belt detachably mounted on the frame under side. A drive pulley (30) is disposed in the actuator unit (12) and is supported by a frame body with a rubber spring so as to contact with an outer surface on the return side belt and inner pulleys (23, 24) are disposed on the frame under side at the actuator unit attaching position so as to contact with the return side belt inner surface. The drive pulley (30) is always pressed and energized to the inner pulley side by the rubber spring and the belt supported between the inner pulley and the drive pulley (30) is friction actuated by pressing the drive pulley from the belt outside. The take-up device can be eliminated from the device by pressing the drive pulley to the belt side.

Abstract translation: 本发明的带驱动装置具有通过滑动床（16）连接上端的左右框架（5,15），环形带（20）由头带轮（21）锁定，头带轮（21）设置在 框架（5,15）的头端和设置在其尾端上的尾部滑轮（21），以及可拆卸地安装在框架下侧的皮带的致动器单元（12）。 驱动滑轮（30）设置在致动器单元（12）中，并且由橡胶弹簧由框架主体支撑以便与返回侧带的外表面接触并且内滑轮（23,24）设置在 所述框架在所述致动器单元安装位置的下侧，以便与所述返回侧带内表面接触。 驱动皮带轮（30）总是通过橡胶弹簧被按压并向内滑轮侧通电，并且通过从皮带外部按压驱动皮带轮而将支撑在内滑轮和驱动滑轮（30）之间的皮带摩擦致动。 通过将驱动皮带轮按压到皮带侧，可以从装置中取出卷取装置。

公开(公告)号：US5635327A

公开(公告)日：1997-06-03

申请号：US448989

申请日：1995-05-24

Applicant: Yuzuru Fukuda ,  Shigeru Yagi ,  Taketoshi Higashi

Inventor： Yuzuru Fukuda ,  Shigeru Yagi ,  Taketoshi Higashi

IPC: G03G5/08 ,  G03G5/082 ,  G03G5/14 ,  G03G5/147

CPC classification number: G03G5/08221 ,  G03G5/08235 ,  G03G5/144 ,  G03G5/14704 ,  G03G5/14769 ,  G03G5/14791 ,  G03G5/08285

Abstract: An electrophotographic photoreceptor and process for preparing the same, the photoreceptor comprising a conductive substrate having thereon a photoconductive layer and a surface layer in this order, the photoconductive layer comprising amorphous silicon containing at least one of hydrogen and a halogen, and the surface layer comprising a dried and/or cured product under a reduced pressure of an inorganic or organic high molecular weight material containing fine particles of a conductive metal oxide dispersed therein.

Abstract translation: 一种电子照相感光体及其制备方法，该感光体包括其上具有光电导层和表面层的导电基底，光电导层包含含有氢和卤素中的至少一种的非晶硅，表面层包含 在含有分散在其中的导电金属氧化物的微粒的无机或有机高分子量材料的减压下的干燥和/或固化产物。

公开(公告)号：US5631087A

公开(公告)日：1997-05-20

申请号：US479566

申请日：1995-06-07

Applicant: Yuzuru Fukuda ,  Shigeru Yagi ,  Tsuyoshi Ohta ,  Masato Ono

Inventor： Yuzuru Fukuda ,  Shigeru Yagi ,  Tsuyoshi Ohta ,  Masato Ono

IPC: G03G5/02 ,  G03G5/082 ,  B23B9/00

CPC classification number: G03G5/0217 ,  G03G5/08285 ,  Y10T428/30

Abstract: An electrostatic image-bearing dielectric member comprises a support and a dielectric layer formed on the support. The dielectric layer is formed of at least one of amorphous carbon, diamond-like carbon and diamond. The dielectric layer may contain not larger than 60 atomic percent of at least one of hydrogen and fluorine. An intermediate layer may be provided between the support and the dielectric layer in order to improve the adhesion therebetween.

Abstract translation: 静电图像承载电介质构件包括支撑体和形成在支撑体上的电介质层。 电介质层由无定形碳，类金刚石碳和金刚石中的至少一种形成。 电介质层可以含有不大于60原子％的氢和氟中的至少一种。 可以在支撑体和电介质层之间设置中间层，以改善它们之间的粘合性。

公开(公告)号：US5459009A

公开(公告)日：1995-10-17

申请号：US624533

申请日：1990-12-10

Applicant: Yuzuru Fukuda ,  Masayuki Nishikawa ,  Masato Ono ,  Noriyoshi Takahashi ,  Shigeru Yagi ,  Ken-ichi Karakida

Inventor： Yuzuru Fukuda ,  Masayuki Nishikawa ,  Masato Ono ,  Noriyoshi Takahashi ,  Shigeru Yagi ,  Ken-ichi Karakida

IPC: G03G5/082 ,  G03G5/00

CPC classification number: G03G5/08278

Abstract: A process for producing an electrophotographic photoreceptor comprising the steps of forming a photoconductive layer on a conductive substrate in a reaction chamber, and after the photoconductive layer is formed, forming a surface protection layer on the photoconductive layer by introducing into the reaction chamber a gaseous mixture comprising (i) a first component, fluorohydrocarbon gas, and (ii) a second component silicon, hydride gas, or a hydrocarbon gas and/or hydrogen gas and decomposing the gaseous mixture by glow discharge, wherein the surface protection layer thus formed comprises amorphous silicon carbide when the second component is a silicon hydride gas or amorphous carbon when the second component is a hydrocarbon gas and/or hydrogen gas. The surface protection layer exhibits sufficient hardness to protect the photoconductive layer from frictional scratches and other related damage.

Abstract translation: 一种电子照相感光体的制造方法，包括以下步骤：在反应室中的导电性基板上形成光电导层，在形成光电导层之后，在光电导层上形成表面保护层，将反应室内的气体混合物 包括（i）第一组分，氟代烃气体和（ii）第二组分硅，氢化物气体或烃气体和/或氢气，并通过辉光放电分解气体混合物，其中由此形成的表面保护层包含无定形 当第二组分是烃气体和/或氢气时，当第二组分是氢化硅气体或无定形碳时，碳化硅。 表面保护层表现出足够的硬度，以保护光电导层不受摩擦划痕和其他相关损害。

公开(公告)号：US5132200A

公开(公告)日：1992-07-21

申请号：US586160

申请日：1990-09-21

Applicant: Yuzuru Fukuda ,  Shigeru Yagi ,  Ken Ebihara ,  Yasunobu Iwata

Inventor： Yuzuru Fukuda ,  Shigeru Yagi ,  Ken Ebihara ,  Yasunobu Iwata

IPC: G03G5/08 ,  G03G5/043 ,  G03G5/047 ,  G03G5/082

CPC classification number: G03G5/0433 ,  G03G5/047 ,  G03G5/082

Abstract: An electrophotographic photoreceptor is disclosed, comprising at least a substrate having thereon a charge transporting layer and a charge generating layer, wherein said charge transporting layer is a porous anodized aluminum film which is formed by anodizing a substrate at least a surface of which comprises aluminum or an aluminum alloy by using an alternating current having an effective voltage of from 3 to 40 V or an electrical current of alternating waveform having substantially the equal action. And the electrophotographic photoreceptor can be produced by a process comprising subjecting a substrate at least a surface of which comprises aluminum or an aluminum alloy to anodic oxidation in an electrolytic solution by using an alternating current having an effective voltage of from 3 to 40 V or an electrical current of alternating waveform having substantially the equal action to form as a charge transporting layer a porous anodized aluminum film on the substrate and then forming a charge generating layer thereon. The porous anodized aluminum film has sufficient softness to be freed from heat cracks and exhibits satisfactory adhesion to a charge generating layer and excellent mechanical strength.

Abstract translation: 公开了一种电子照相感光体，其至少包括其上具有电荷传输层和电荷产生层的基底，其中所述电荷输送层是多孔阳极氧化铝膜，其通过阳极氧化底物而形成，所述基底的至少表面包括铝或 通过使用具有3至40V的有效电压的交流电或具有基本上相同作用的交变波形的电流来获得铝合金。 并且电子照相感光体可以通过以下方法制造，该方法包括使至少其表面包含铝或铝合金的基材在电解液中进行阳极氧化，方法是使用有效电压为3-40V的交流电或 交替波形的电流具有基本上相同的作用，以在电荷输送层上形成多孔阳极氧化铝膜，然后在其上形成电荷产生层。 多孔阳极氧化铝膜具有足够的柔软度以免除热裂纹，并且对电荷产生层表现出令人满意的粘附性和优异的机械强度。

公开(公告)号：US5120626A

公开(公告)日：1992-06-09

申请号：US586083

申请日：1990-09-21

Applicant: Yuzuru Fukuda ,  Shigeru Yagi ,  Ken Ebihara ,  Yasunobu Iwata

Inventor： Yuzuru Fukuda ,  Shigeru Yagi ,  Ken Ebihara ,  Yasunobu Iwata

IPC: G03G5/08 ,  G03G5/047 ,  G03G5/082

CPC classification number: G03G5/082 ,  G03G5/047

Abstract: An electrophotographic photoreceptor is disclosed, comprising at least a substrate having thereon a charge transporting layer and a charge generating layer, wherein the charge transporting layer is a porous anodized film which is formed by anodizing a substrate comprising an Al-Mg alloy containing from 2.2 to 5.6% by weight of magnesium and, as impurities, at least one of Mn, Cu, Fe, Si, Cr, and Zn or an Al-Mn alloy containing from 1.0 to 1.5% by weight of manganese and, as impurities, at least one of Cu, Fe, Si, and Zn. And the electrophotographic photoreceptor can be produced by a process comprising subjecting a substrate comprising an Al-Mg alloy containing from 2.2 to 5.6% by weight of magnesium and, as impurities, at least one of Mn, Cu, Fe, Si, Cr, and Zn or an Al-Mn alloy containing from 1.0 to 1.5% by weight of manganese and, as impurities, at least one of Cu, Fe, Si, and Zn to anodic oxidation to form a charge transporting layer comprising a porous anodized film and then forming a charge generating layer on the charge transporting layer. The electrophotographic photoreceptor exhibits excellent physical properties and electrophotographic properties, and satisfactory adhesion between a charge transporting layer and a charge generating layer.

Abstract translation: 公开了一种电子照相感光体，其至少包括其上具有电荷输送层和电荷产生层的基底，其中所述电荷输送层是多孔阳极氧化膜，其通过阳极氧化包含Al-Mg合金的基底而形成，所述Al-Mg合金含有2.2〜 5.6重量％的镁，作为杂质，含有1.0〜1.5重量％的锰和作为杂质的至少一种Mn，Cu，Fe，Si，Cr和Zn中的至少一种或Al-Mn合金 Cu，Fe，Si和Zn之一。 并且电子照相感光体可以通过以下方法制造，该方法包括使包含含有2.2-5.6重量％镁的Al-Mg合金的基材和作为杂质的至少一种Mn，Cu，Fe，Si，Cr和 Zn或Al-Mn合金，其含有1.0至1.5重量％的锰，并且作为杂质，将Cu，Fe，Si和Zn中的至少一种用于阳极氧化以形成包含多孔阳极氧化膜的电荷输送层，然后 在电荷输送层上形成电荷产生层。 电子照相感光体表现出优异的物理性能和电子照相性能，以及电荷输送层与电荷产生层之间的良好粘附性。

公开(公告)号：US4960662A

公开(公告)日：1990-10-02

申请号：US293843

申请日：1989-01-05

Applicant: Masayuki Nishikawa ,  Yumiko Komori ,  Masaki Yokoi ,  Masato Ono ,  Noriyoshi Takahashi ,  Yuzuru Fukuda ,  Shigeru Yagi ,  Ken-ichi Karakida

Inventor： Masayuki Nishikawa ,  Yumiko Komori ,  Masaki Yokoi ,  Masato Ono ,  Noriyoshi Takahashi ,  Yuzuru Fukuda ,  Shigeru Yagi ,  Ken-ichi Karakida

IPC: G03G5/08 ,  G03G5/082 ,  H01L21/66

CPC classification number: G03G5/08235

Abstract: A positively and negatively chargeable electrophotographic photoreceptor is disclosed, comprising a substrate having thereon a charge blocking layer, an amorphous silicon photoconductive layer, and an amorphous silicon nitride surface layer provided in that order, wherein the charge blocking layer comprises of amorphous silicon nitride and the amorphous silicon photoconductive layer comprises of an i-type amorphous silicon containing 0.05 to 5.0 ppm of boron.

Abstract translation: 公开了一种正和负带电的电子照相感光体，包括其上具有电荷阻挡层，非晶硅光导电层和非晶氮化硅表面层的基板，其中电荷阻挡层包括非晶氮化硅和 非晶硅光电导层由含有0.05-5.0ppm硼的i型非晶硅组成。