公开(公告)号：US20160276455A1

公开(公告)日：2016-09-22

申请号：US14661953

申请日：2015-03-18

Applicant: QUALCOMM Incorporated

Inventor： Haining Yang ,  Stanley Seungchul Song

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/66 ,  H01L21/28 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/528 ,  H01L23/532 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/4958 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/28247 ,  H01L21/32133 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823475 ,  H01L23/528 ,  H01L23/53238 ,  H01L29/0649 ,  H01L29/42376 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66568 ,  H01L29/78

Abstract: A semiconductor device includes a gate region, a conductive cap, and an interconnect. The gate region (e.g., a metal-gate transistor) includes a metal gate region and a high dielectric constant (high-K) gate dielectric region. The conductive cap is disposed on a surface of the metal gate region and on a surface of the high-K gate dielectric region, and the interconnect is disposed on the conductive cap. The conductive cap includes a conductive material that electrically connects the gate region to the interconnect.

Abstract translation: 半导体器件包括栅极区，导电帽和互连。 栅极区域（例如，金属栅极晶体管）包括金属栅极区域和高介电常数（高K）栅极电介质区域。 导电盖设置在金属栅极区域的表面上和高K栅极电介质区域的表面上，并且互连设置在导电盖上。 导电盖包括将栅极区域与互连电连接的导电材料。

公开(公告)号：US20140264751A1

公开(公告)日：2014-09-18

申请号：US14045604

申请日：2013-10-03

Applicant: QUALCOMM Incorporated

Inventor： Xiangdong Chen ,  Haining Yang

IPC: H01L23/522

CPC classification number: H01L23/5222 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0629 ,  H01L27/0682 ,  H01L28/20 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a chip comprises a capacitor and a resistor. The capacitor comprises a first capacitor terminal, a second capacitor terminal, and a dielectric layer between the first and second capacitor terminals. The second capacitor terminal and the resistor are both fabricated from a resistor metal layer.

Abstract translation: 在一个实施例中，芯片包括电容器和电阻器。 电容器包括第一电容器端子，第二电容器端子和第一和第二电容器端子之间的电介质层。 第二电容器端子和电阻器均由电阻器金属层制成。