公开(公告)号：US20160268417A1

公开(公告)日：2016-09-15

申请号：US15062887

申请日：2016-03-07

申请人： Japan Display Inc.

发明人： Hidekazu MIYAKE ,  Arichika Ishida ,  Hiroto Miyake ,  Isao Suzumura ,  Yohei Yamaguchi

IPC分类号： H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/78696

摘要： According to one embodiment, a thin-film transistor includes a semiconductor layer SC including a channel region, and a source region and a drain region on both sides of the channel region, a gate electrode GE, a first electrode SE connected to the source region via a first contact hole CH1, a second electrode DE connected to the drain region via a second contact hole CH2, a source line connected to the first electrode, and a drain line connected to the second electrode. A distance from the first and second contact holes to an end of the respective regions in a direction of a channel width is greater than or equal to 5 μm and less than or equal to 30 μm. The source line and the drain line extend in directions different from each other.

摘要翻译： 根据一个实施例，薄膜晶体管包括半导体层SC，其包括沟道区，沟道区两侧的源极区和漏极区，栅极GE，连接到源极区的第一电极SE 经由第一接触孔CH1，经由第二接触孔CH2连接到漏极区的第二电极DE，连接到第一电极的源极线和连接到第二电极的漏极线。 从沟道宽度方向到第一和第二接触孔到各个区域的端部的距离大于或等于5μm且小于或等于30μm。 源极线和漏极线在彼此不同的方向上延伸。