公开(公告)号：US08456384B2

公开(公告)日：2013-06-04

申请号：US12707556

申请日：2010-02-17

Applicant: Yong-Jin Kim

Inventor： Yong-Jin Kim

IPC: G09G3/28

CPC classification number: H01J11/12 ,  H01J2211/46 ,  H05K1/118 ,  H05K1/148 ,  H05K3/361 ,  H05K2201/09409 ,  H05K2201/09436 ,  H05K2201/0949 ,  H05K2201/09709

Abstract: A plasma display device is disclosed. The plasma display device includes a plasma display panel (PDP), a printed circuit board assembly (PBA), and a flexible printed circuit (FPC) electrically connecting electrodes of the PBA and the PDP. In some embodiments, the FPC is formed of two films with signal lines therebetween and electrodes on opposite sides.

Abstract translation: 公开了一种等离子体显示装置。 等离子体显示装置包括等离子体显示面板（PDP），印刷电路板组件（PBA）和电连接PBA和PDP的电极的柔性印刷电路（FPC）。 在一些实施例中，FPC由两个膜组成，其中信号线和相对侧的电极。

公开(公告)号：US08242676B2

公开(公告)日：2012-08-14

申请号：US12490163

申请日：2009-06-23

Applicant: Yong-Jin Kim ,  Jin-Kyoung Yoo ,  Young-Joon Hong ,  Gyu-Chul Yi ,  Chul-Ho Lee

Inventor： Yong-Jin Kim ,  Jin-Kyoung Yoo ,  Young-Joon Hong ,  Gyu-Chul Yi ,  Chul-Ho Lee

IPC: H01J9/02

CPC classification number: H01J31/127 ,  H01J29/04 ,  H01J2201/30469

Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.

Abstract translation: 公开了场致发射器件，场致发射显示器件及其制造方法。 场致发射器件包括：i）衬底; ii）位于基底上的电极; iii）掩模层，其位于所述电极上并且包括一个或多个开口; 以及iv）多个纳米结构，其经由所述开口定位在所述电极上并且形成为径向延伸。 可以施加多个纳米结构以在从电极接收电压时发射电子。

公开(公告)号：US20120010697A1

公开(公告)日：2012-01-12

申请号：US13176398

申请日：2011-07-05

Applicant: Kyong-Min SHIN ,  Kang Sun Hong ,  Eun Ae Jo ,  Yong-Jin Kim ,  Cheul Lee ,  Sam Sea Oh ,  Chang-Ha Lee ,  Hong-Gook Lim

Inventor： Kyong-Min SHIN ,  Kang Sun Hong ,  Eun Ae Jo ,  Yong-Jin Kim ,  Cheul Lee ,  Sam Sea Oh ,  Chang-Ha Lee ,  Hong-Gook Lim

IPC: A61F2/24 ,  B23P11/00

CPC classification number: A61F2/2415 ,  A61F2/2418 ,  A61F2220/0075 ,  Y10T29/49826

Abstract: A heart valve prosthesis and a method of fabricating the same. The heart valve prosthesis uses a leaflet of pig pericardium or a leaflet of cattle pericardium, which has a suitable thickness according to the size of the valve, and a stent. The heart valve prosthesis is fabricated by placing a valve body over a Dacron body, binding the valve body to the Dacron body using stitching fiber, rolling the Dacron body into a cylindrical form such that the valve body is located inside, binding opposite edges of the Dacron body to each other using stitching fiber, and inserting the resultant structure into a stent, which is knitted using a shape memory alloy wire. The heart valve prosthesis is friendly to and is not rejected by human tissue, is free from deformation, and can be implanted using a non-invasive manner without incising the chest wall of a patient.

Abstract translation: 一种心脏瓣膜假体及其制造方法。 心脏瓣膜假体使用猪心包的小叶或牛心包的小叶，其根据瓣膜的尺寸具有合适的厚度和支架。 心脏瓣膜假体是通过将阀体放置在达克龙体上而制成的，其使用缝合纤维将阀体与达克龙体结合，将达克龙体旋转成圆柱形，使得阀体位于内部， 使用缝合纤维彼此使用涤纶体，并将所得到的结构插入到使用形状记忆合金丝编织的支架中。 心脏瓣膜假体对人体组织是友好的并且不被人体组织排斥，没有变形，并且可以非侵入性地植入，而不会切开患者的胸壁。

公开(公告)号：US08089042B2

公开(公告)日：2012-01-03

申请号：US12323783

申请日：2008-11-26

Applicant: Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

Inventor： Do-Haing Lee ,  Ha-Na Kim ,  Yong-Jin Kim

IPC: H05H3/02

CPC classification number: H01J37/30 ,  H01J2237/0041 ,  H01J2237/04756 ,  H01J2237/20 ,  H01J2237/31

Abstract: An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.

Abstract translation: 提供了一种使用中和束来处理衬底的设备和方法。 衬底处理装置包括被配置为形成离子源的离子源生成装置。 离子提取装置被配置为从离子源提取和加速离子。 离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。 从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。 衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。 衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

公开(公告)号：US20110176726A1

公开(公告)日：2011-07-21

申请号：US13001780

申请日：2009-12-29

Applicant: Seung-Yong Lee ,  Yong-Jin Kim ,  Cheol-Hun Jang

Inventor： Seung-Yong Lee ,  Yong-Jin Kim ,  Cheol-Hun Jang

IPC: G06K9/00

CPC classification number: H04N1/40012 ,  H04N9/67 ,  H04N9/77

Abstract: Provided are a color to grayscale image conversion method of converting a color image into a grayscale image while maintaining original features of the color image, and a recording medium storing a program for performing the same. When an original color image is input, a target gradient with the features of the input original color image is acquired, and a global mapping function for converting the original color image into a grayscale image is determined based on the acquired target gradient. Thereafter, the original color image is converted into a grayscale image using the determined global mapping function. Therefore, it is possible to quickly convert a color image into a grayscale image, and to acquire a high-quality grayscale image with features of color difference included in the original color image.

Abstract translation: 提供了一种将彩色图像转换为灰度图像同时保持彩色图像的原始特征的彩色到灰度级图像转换方法，以及存储用于执行该彩色图像的程序的记录介质。 当输入原始彩色图像时，获取具有输入原始彩色图像的特征的目标梯度，并且基于所获取的目标梯度来确定用于将原始彩色图像转换为灰度图像的全局映射功能。 此后，使用所确定的全局映射函数将原始彩色图像转换成灰度图像。 因此，可以将彩色图像快速转换为灰度图像，并且获得具有包括在原始彩色图像中的色差特征的高质量灰度图像。

公开(公告)号：US20110129953A1

公开(公告)日：2011-06-02

申请号：US12955222

申请日：2010-11-29

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L33/32 ,  H01L21/20

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

Abstract translation: 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US07915698B2

公开(公告)日：2011-03-29

申请号：US12002338

申请日：2007-12-14

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L29/82

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses on the base substrate that become larger from a central portion of the base substrate towards a peripheral portion when growing a nitride semiconductor film. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，其构造成在生长氮化物半导体膜时吸收或减小从基底基板的中心部分朝向周边部分变大的基底基板上的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US20100327673A1

公开(公告)日：2010-12-30

申请号：US12786919

申请日：2010-05-25

Applicant: Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

Inventor： Jae-Woo Jun ,  Jun-Kun Choi ,  Hwa-Young Oh ,  Yong-Jin Kim ,  Kyung-Ho Lee ,  Seok-Jun Park ,  Kwang-Hyung Lee ,  Je-Hyun Bang

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: A linear vibrator is disclosed. In accordance with an embodiment of the present invention, the linear vibrator includes a base, a coil unit, which is coupled to the base, a magnet, which is coupled to the coil unit such that the magnet can move relatively with respect to the coil unit, and a leaf spring, which is interposed between the magnet and the base and includes a plurality of plate-shaped members having center portions thereof being separated from one another and both respective ends thereof being coupled to one another. Thus, the linear vibrator can increase the range of displacement in the leaf spring and increase the magnitude of vibration in the linear vibrator.

Abstract translation: 公开了线性振动器。 根据本发明的实施例，线性振动器包括底座，联接到基座的线圈单元，耦合到线圈单元的磁体，使得磁体可相对于线圈相对移动 单元和片簧，其插入在所述磁体和所述基座之间，并且包括多个板状构件，所述多个板状构件的中心部分彼此分离并且其两个端部彼此连接。 因此，线性振动器可以增加板簧中的位移范围并增加线性振动器中振动的大小。

公开(公告)号：US20100262398A1

公开(公告)日：2010-10-14

申请号：US12759851

申请日：2010-04-14

Applicant: Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

Inventor： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC: G06F19/00

CPC classification number: G05B19/4183 ,  G05B2219/37224 ,  G05B2219/37309 ,  Y02P90/10 ,  Y02P90/14

Abstract: A method of selecting a sensor in a semiconductor manufacturing process is provided. The method includes measuring responses of a plurality of sensors when a first of a plurality of process conditions is varied, identifying one or more of the sensors having a steady state response after the first of the process conditions is varied, and selecting a sensor having a highest value within a response range from among the sensors having the steady state response for the first process condition that is varied. This methodology may be performed for multiple different process conditions. Thus, when process conditions in multiple processes of manufacturing a semiconductor device are varied, sensors having a steady state response can be selected from among multiple sensors for detecting abnormalities in the processes.

Abstract translation: 提供了一种在半导体制造过程中选择传感器的方法。 该方法包括当多个处理条件中的第一个被改变时，测量多个传感器的响应，在第一个处理条件变化之后识别具有稳态响应的一个或多个传感器，并且选择具有 在具有变化的第一处理条件的稳态响应的传感器的响应范围内的最高值。 该方法可以针对多个不同的工艺条件进行。 因此，当制造半导体器件的多个工艺过程中的工艺条件变化时，可以从用于检测工艺中的异常的多个传感器中选择具有稳定状态响应的传感器。

公开(公告)号：US20090289860A1

公开(公告)日：2009-11-26

申请号：US12433180

申请日：2009-04-30

Applicant: Sang-Ha LEE ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

Inventor： Sang-Ha LEE ,  Yong-Jin Kim ,  Jae-Ho Lee ,  Seung-Hwen Kim ,  S. Konstantin Krylov

IPC: H01Q1/24 ,  H01Q7/08 ,  H01Q1/50 ,  H01Q1/44 ,  H01Q21/28

CPC classification number: H01Q7/06 ,  H01Q7/08 ,  H01Q23/00

Abstract: An active magnetic antenna with a ferrite core having a winding is provided, forming a frame magnetic antenna which is connected with a low-noise transistor, to amplify a signal of the frame magnetic antenna. A base of the transistor is connected directly to one contact of the winding, and a second contact of the winding is capable of shifting a voltage of the base of the transistor. The impedance of the frame magnetic antenna is adjusted as a complex conjugate with an impedance of the base of the transistor of the low-noise amplifier, and the winding eliminates its own resonances.

Abstract translation: 提供具有绕组的铁氧体磁芯的有源磁性天线，形成与低噪声晶体管连接的框架磁性天线，以放大帧磁性天线的信号。 晶体管的基极直接连接到绕组的一个触点，并且绕组的第二触点能够移动晶体管的基极的电压。 框架磁性天线的阻抗被调整为与低噪声放大器的晶体管的基极的阻抗的复共轭，并且绕组消除了它自己的谐振。