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公开(公告)号：US08004026B2
公开(公告)日：2011-08-23
申请号：US12720549
申请日：2010-03-09
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
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公开(公告)号：US07944493B2
公开(公告)日：2011-05-17
申请号：US12715884
申请日：2010-03-02
IPC分类号： H04N3/14 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14636 , H04N5/341 , H04N5/3575 , H04N5/3741
摘要： In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor 105 are formed in one active region surrounded by a device isolation region. The floating diffusion layer section 103 included in one photosensitive cell is connected not to the amplifier transistor 104 included in that cell but to the gate of the amplifier transistor 104 included in another photosensitive cell adjacent to the one photosensitive cell in the column direction. A polysilicon wire 111 connects the transfer gates 102 arranged in the same row, and a polysilicon wire 112 connects the reset transistors 105 arranged in the same row. For connection in the row direction, only polysilicon wires are used.
摘要翻译： 在每个感光单元中，在由器件隔离区包围的一个有源区域中形成光电二极管101，传输门102，浮动扩散层部分103，放大器晶体管104和复位晶体管105。 包含在一个感光单元中的浮动扩散层部分103不是连接到包括在该单元中的放大器晶体管104，而是连接到在列方向上与一个感光单元相邻的另一个感光单元中的放大器晶体管104的栅极。 多晶硅导线111连接排列在同一行的传输门102，并且多晶硅布线112连接布置在同一行中的复位晶体管105。 为了在行方向上连接，仅使用多晶硅线。
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公开(公告)号：US20110109780A1
公开(公告)日：2011-05-12
申请号：US13007033
申请日：2011-01-14
IPC分类号： H04N5/335
CPC分类号： H04N5/3598 , H04N5/2351
摘要： An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
摘要翻译： 一种成像装置根据入射光的量输出亮度信息，并且包括：成像单元，其包括一维或二维布置的多个单位单元，每个单元包括光电转换部分，该光电转换部分生成第一输出电压 复位状态和第二输出电压，并且每个单元电池产生对应于第一输出电压的复位电压和对应于第二输出电压的读取电压; 以及输出单元，其可操作以相对于每个单位单元输出指示当正常光入射到所述成像装置并且所述读取电压处于预定范围时所述复位电压和所述读取电压之间的差的亮度信息，以及亮度信息 当强光入射到成像装置并且读取电压不在预定范围内时指示高亮度。
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公开(公告)号：US07859032B2
公开(公告)日：2010-12-28
申请号：US11883556
申请日：2005-07-21
IPC分类号： H01L31/062 , H01L31/113 , H01L27/148
CPC分类号： H04N5/374 , H01L27/14609 , H01L27/1463 , H01L27/14634 , H04N5/3597 , H04N5/363
摘要： During an exposure time period (long accumulation time period) of a low shutter speed shooting mode, a second reference voltage Vss2, which is different from a first reference voltage Vss1 (a ground voltage) corresponding to a reference voltage of a peripheral circuit, is applied to a well (5) where a photoelectric converter section (2) and a drain region (4) are formed, whereby generation of dark electrons at a portion of a surface of the well (5) below a gate electrode (6) is suppressed. A polarity of the second reference voltage Vss2 is positive in the case where a conductivity type of the well (5) is a P-type, and is negative in the case of an N-type.
摘要翻译： 在低快门速度拍摄模式的曝光时间段（长时间累积时间段）期间，不同于与外围电路参考电压相对应的第一参考电压Vss1（接地电压）的第二参考电压Vss2是 施加到其上形成光电转换器部分（2）和漏极区域（4）的阱（5），由此在栅电极（6）下面的阱（5）的表面的一部分处产生暗电子是 被压制 在阱（5）的导电类型为P型的情况下，第二参考电压Vss2的极性为正，在N型的情况下为负。
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公开(公告)号：US07528871B2
公开(公告)日：2009-05-05
申请号：US10808615
申请日：2004-03-25
IPC分类号： H04N5/217
CPC分类号： H04N5/3598 , H04N5/2351
摘要： An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
摘要翻译： 一种成像装置根据入射光的量输出亮度信息，并且包括：成像单元，其包括一维或二维布置的多个单位单元，每个单元包括光电转换部分，该光电转换部分生成第一输出电压 复位状态和第二输出电压，并且每个单元电池产生对应于第一输出电压的复位电压和对应于第二输出电压的读取电压; 以及输出单元，其可操作以相对于每个单位单元输出指示当正常光入射到所述成像装置并且所述读取电压处于预定范围时所述复位电压和所述读取电压之间的差的亮度信息，以及亮度信息 当强光入射到成像装置并且读取电压不在预定范围内时指示高亮度。
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公开(公告)号：US07525585B2
公开(公告)日：2009-04-28
申请号：US10545953
申请日：2004-04-05
CPC分类号： H04N5/357
摘要： A solid-state image pickup device consists of a plurality of pixels arranged in a matrix for outputting an image signal corresponding to the received light intensity. The solid-state image pickup device includes: reset switches (13,23) for opening/closing between a VDDCELL that repeatedly and cyclically outputs a high potential and a low potential and an electric charge holding section in each pixel; reset signal lines (97,98) connected to pixels of the same row; a row scan circuit (80) for successively selecting rows, always giving Hi impedance or Lo impedance to the reset signal of the selected row and Hi impedance to the reset signal lines of the non-selected row; and an ALLRS circuit 94 for giving the Lo potential to the reset line of the non-selected row before and after the rise of VDCELL from a low potential to high potential. Thus, the solid-state image pickup device can reduce its size and increase its operation speed while suppressing lowering of the dynamic range.
摘要翻译： 固态图像拾取装置由布置在矩阵中的多个像素组成，用于输出对应于所接收的光强度的图像信号。 固态图像拾取装置包括：用于在每个像素中反复循环地输出高电位的VDDCELL和低电位的VDDCELL和电荷保持部之间的开/关的复位开关（13,23） 连接到同一行的像素的复位信号线（97,98） 行扫描电路（80），用于连续地选择行，总是给所选行的复位信号和高阻抗的Hi阻抗或Lo阻抗提供给未选择的行的复位信号线; 以及ALLRS电路94，用于在VDCELL从低电位升高到高电位之前和之后，向未选行的复位线提供Lo电位。 因此，固态图像拾取装置可以在抑制动态范围的降低的同时减小其尺寸并增加其操作速度。
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公开(公告)号：US20070184570A1
公开(公告)日：2007-08-09
申请号：US11726437
申请日：2007-03-22
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/14609
摘要： A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
摘要翻译： 固态成像装置包括多个感光单元，以及用于驱动多个感光单元的驱动单元。 每个感光单元包括形成为暴露在半导体衬底的表面上以用于累积通过使入射光进行光电转换而获得的信号电荷的光电二极管，用于传送由光电二极管累积的信号电荷的传输晶体管，用于 临时累积由传输晶体管传送的信号电荷，以及放大晶体管，用于放大暂时存储在浮动扩散层中的信号电荷。 设置在放大器晶体管中的源极/漏极扩散层被自对准层覆盖，并且浮动扩散层形成为露出在半导体衬底的表面上。
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公开(公告)号：US20070109432A1
公开(公告)日：2007-05-17
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译： 固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号 根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。 存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。
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公开(公告)号：US20060158540A1
公开(公告)日：2006-07-20
申请号：US10545953
申请日：2004-04-05
IPC分类号： H04N5/335
CPC分类号： H04N5/357
摘要： A solid-state image pickup device consists of a plurality of pixels arranged in a matrix for outputting an image signal corresponding to the received light intensity. The solid-state image pickup device includes: reset switches (13,23) for opening/closing between a VDDCELL that repeatedly and cyclically outputs a high potential and a low potential and an electric charge holding section in each pixel; reset signal lines (97,98) connected to pixels of the same row; a row scan circuit (80) for successively selecting rows, always giving Hi impedance or Lo impedance to the reset signal of the selected row and Hi impedance to the reset signal lines of the non-selected row; and an ALLRS circuit 94 for giving the Lo potential to the reset line of the non-selected row before and after the rise of VDCELL from a low potential to high potential. Thus, the solid-state image pickup device can reduce its size and increase its operation speed while suppressing lowering of the dynamic range.
摘要翻译： 固态图像拾取装置由布置在矩阵中的多个像素组成，用于输出对应于所接收的光强度的图像信号。 固态图像拾取装置包括：用于在每个像素中反复循环输出高电位的VDDCELL和低电位的VDDCELL和电荷保持部之间的开/关的复位开关（13,23） 连接到同一行的像素的复位信号线（97,98） 行扫描电路（80），用于连续地选择行，总是给所选行的复位信号和高阻抗的Hi阻抗或Lo阻抗提供给未选择的行的复位信号线; 以及ALLRS电路94，用于在VDCELL从低电位升高到高电位之前和之后，向未选行的复位线提供Lo电位。 因此，固态图像拾取装置可以在抑制动态范围的降低的同时减小其尺寸并增加其操作速度。
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公开(公告)号：US20050012839A1
公开(公告)日：2005-01-20
申请号：US10916409
申请日：2004-08-12
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/361 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/376 , H04N5/378
CPC分类号： H04N5/3658 , H01L27/14609 , H01L27/14643 , H04N5/3575 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378
摘要： An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines. In this apparatus, each unit cell includes a photodiode serving as a photoelectric conversion portion, an amplification transistor having a gate to which an output from the photodiode is supplied, and a source and a drain respectively connected to the vertical signal line and the vertical address line, an address capacitor connected between the gate of the amplification transistor and the vertical address line, and a reset transistor connected in parallel with the address capacitor.
摘要翻译： MOS型固态成像装置包括：通过二维排列在半导体衬底上作为光电转换部分的单位单元形成的成像区域，沿着成像区域的行方向布置的多个垂直地址线，以选择行 要被寻址的单位单元，沿着成像区域的列方向布置的多条垂直信号线，以从每列中的单位单元读出信号;多个负载晶体管，每个连接到每个垂直信号的一端 线，以及多个水平选择晶体管，每个连接到每个垂直信号线的另一端。 在该装置中，每个单位单元包括用作光电转换部分的光电二极管，具有栅极的放大晶体管，来自光电二极管的输出端分别连接到垂直信号线和垂直地址的源极和漏极 连接在放大晶体管的栅极和垂直地址线之间的地址电容器，以及与地址电容器并联连接的复位晶体管。
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