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    Organic EL display
    71.
    发明授权
    Organic EL display 失效
    有机EL显示屏

    公开(公告)号：US07759861B2

    公开(公告)日：2010-07-20

    申请号：US11234189

    申请日：2005-09-26

    Applicant: Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

    Inventor： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi

    IPC: H01J1/62 ,  H01J63/04

    CPC classification number: H01L51/5262 ,  H01L27/3211

    Abstract: In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.

    Abstract translation: 在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个图案周期的二维凹凸结构。

    Resistor
    72.
    发明授权
    Resistor 失效
    电阻

    公开(公告)号：US06859133B2

    公开(公告)日：2005-02-22

    申请号：US10258905

    申请日：2002-02-28

    Applicant: Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

    Inventor： Tsutomu Nakanishi ,  Takashi Morino ,  Tadao Yagi ,  Tetsuhiro Korechika

    IPC: H01C1/14 ,  H01C1/148 ,  H01C7/00 ,  H01C1/012

    CPC classification number: H01C7/003 ,  H01C1/148

    Abstract: The resistor of the present invention comprises a substrate, a pair of upper electrode layers disposed on one surface of the substrate, and a resistor layer connected to the pair of upper electrode layers, wherein the upper electrode layer includes a first thin film layer that strongly adheres to the substrate and the resistor layer, and a second thin film layer having volume resistivity lower than the volume resistivity of the first upper electrode thin film layer. Further, the resistor of the present invention comprises a pair of side electrodes, electrically connected to the upper electrode layers, at the end portion of the substrate, and the side electrode includes a first side thin film layer and a second side thin film layer, and the material that forms the second side thin film layer has a solid solubility with the first side thin film layer.

    Abstract translation: 本发明的电阻器包括衬底，设置在衬底的一个表面上的一对上电极层和连接到一对上电极层的电阻层，其中上电极层包括强烈的第一薄膜层 粘附到基板和电阻层，以及具有低于第一上电极薄膜层的体积电阻率的体积电阻率的第二薄膜层。 此外，本发明的电阻器包括在基板的端部处电连接到上电极层的一对侧电极，并且侧电极包括第一侧薄膜层和第二侧薄膜层， 并且形成第二侧薄膜层的材料与第一侧薄膜层具有固体溶解性。

    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    73.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效

    公开(公告)号：US5834791A

    公开(公告)日：1998-11-10

    申请号：US960592

    申请日：1997-10-30

    Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01L29/20

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

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