摘要:
In an organic light-emitting display having superior image quality and device reliability, and a related method of manufacturing the organic light-emitting display, the organic light-emitting display comprises: a gate electrode formed on a substrate; an interlayer insulating film formed on the substrate so as to cover the gate electrode; and a transparent electrode formed on the interlayer insulating film. The interlayer insulating film comprises multiple layers having different refractive indices.
摘要:
An organic light emitting diode (OLED) display includes: a first substrate including a display area and a non-display area; a driving element on the display area of the first substrate, and including a driving thin film transistor, a switching thin film transistor, and a capacitor; a circuit unit on the non-display area of the first substrate; an organic light emitting element on the driving element, and including a pixel electrode, an organic emission layer, and a common electrode; an inorganic protective layer covering the circuit unit and the common electrode of the organic light emitting diode; a sealing member on the inorganic protective layer in the non-display area of the first substrate; and a second substrate on the sealing member.
摘要:
Provided is an organic light-emitting display device. The organic light-emitting display device includes: a substrate; a buffer layer formed on the substrate; a gate insulating layer formed on the buffer layer; a conductive layer formed on the gate insulating layer; and a pixel defined layer exposing a portion of the conductive layer to form a pad portion connected to bumps of a drive integrated circuit (IC) chip, wherein protrusions and recesses are formed on a surface of the conductive layer.
摘要:
An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel electrode. At least one hole is formed in at least one of the black matrix layer and the insulating layer, in a region where the black matrix layer and the insulating layer overlap each other.
摘要:
An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device comprises: a substrate; an active layer disposed on the substrate; a first insulating layer disposed on the active layer; a gate electrode disposed on the first insulating layer; a pixel electrode disposed on the first insulating layer; source and drain electrodes electrically insulated from the gate electrode and electrically connected to the active layer; an intermediate layer disposed on the pixel electrode, wherein the intermediate layer comprises an organic emission layer; and an opposite electrode disposed on the intermediate layer, wherein the pixel electrode is connected to the source electrode or the drain electrode, wherein the gate electrode comprises a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer that are sequentially stacked, and wherein the second and third conductive layers comprises a first oxidation-reduction potential difference therebetween, and the first and third conductive layers comprises a second oxidation-reduction potential difference therebetween, and the first oxidation-reduction potential difference is less than the second oxidation-reduction potential difference.
摘要:
A display device and a manufacturing method thereof are disclosed. In one embodiment, the display device includes 1) a substrate having a pixel region, a transistor region, and a capacitor region and 2) a transistor formed in the transistor region, wherein the transistor comprises i) an active layer formed over the substrate, ii) a gate insulating layer formed on the active layer, iii) a gate electrode formed on the gate insulating layer, and iv) a first interlayer insulating layer covering the gate electrode and formed on the gate insulating layer, v) a second interlayer insulating layer formed on the first interlayer insulating layer and vi) a source electrode and a drain electrode electrically connected to the active layer. The display device further includes a capacitor formed in the capacitor region, wherein the capacitor comprises i) a lower electrode formed on the gate insulating layer and ii) an upper electrode formed on the first interlayer insulating layer, wherein the upper electrode is formed substantially directly above the lower electrode, and wherein the surface area of the lower electrode is less than the surface area of the upper electrode.
摘要:
An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.
摘要:
Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.
摘要:
Provided are a thin film transistor (TFT) capable of increasing ON current and decreasing OFF current values, a TFT substrate having the polysilicon TFT, a method of fabricating the polysilicon TFT, and a method of fabricating a TFT substrate having the polysilicon TFT. The polysilicon TFT substrate includes a gate line and a data line defining a pixel region, a pixel electrode formed in the pixel region, and a TFT including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a polysilicon active layer forming a channel between the source and drain electrodes. The polysilicon active layer includes a channel region on which the gate electrode is superposed, source and drain regions connected to the source and drain electrode, respectively, and at least two lightly doped drain (LDD) regions y formed between the source region and the channel region and between the drain region and the channel region. The LDD regions have an impurity concentration different from each other.
摘要:
The present invention relates to an organic light emitting diode display and a method for manufacturing the same, including: a substrate; first signal lines formed on the substrate and including first pad units; second signal lines that intersect the first signal lines and include second pad units; first thin film transistors that are electrically connected to the first signal lines and the second signal lines; second thin film transistors that are electrically connected to the first thin film transistors; pixel electrodes that are electrically connected to the second thin film transistors; common electrodes facing the pixel electrodes; light emitting members that are formed between the pixel electrodes and the common electrodes; contact assistants that are formed on the first pad units and the second pad units; and protective partitions that enclose circumferences of the contact assistants.