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公开(公告)号：US11637044B2
公开(公告)日：2023-04-25
申请号：US17134128
申请日：2020-12-24
发明人： Hsiang-Wen Tang , Yu-Hung Lai
摘要： A micro LED display includes a display substrate, a first soldering layer, at least one second soldering layer, first micro LEDs and at least one second micro LED. The display substrate includes a substrate having a plurality of pixel areas, a first circuit layer and a second circuit layer, and the first circuit layer and the second circuit layer are arranged in each pixel area. The first soldering layer is disposed on the first circuit layer, and the second soldering layer is disposed on the second micro LED. An arranging area of the first soldering layer is greater than an arranging area of the second soldering layer. The first micro LEDs is bonding to the first circuit layer in each pixel area through the first soldering layer. The second micro LED is bonding to the second circuit layer of one of the pixel areas through the second soldering layer.
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公开(公告)号：US20230083176A1
公开(公告)日：2023-03-16
申请号：US17520628
申请日：2021-11-06
发明人： Bo-Wei Wu , Yu-Yun Lo , Shiang-Ning Yang , Chang-Feng Tsai
摘要： A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.
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73.发明授权公开(公告)号：US11600508B2
公开(公告)日：2023-03-07
申请号：US15931621
申请日：2020-05-14
发明人： Yu-Chu Li , Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen
IPC分类号： H01L21/683 , H01L23/00
摘要： Herein disclosed are a micro-component transfer head, a micro-component transfer device, and a micro-component display. Said micro-component transfer head comprises a carrying surface that corresponds to a micro-component extraction area. Said extraction area conforms with a first geometric object, which comprises at least an acute angle. A second geometric object comprises at least a right angle and is constituted of n copies of the first geometric object, n being an integer greater than 1. The shape of the first geometric object differs from that of the second.
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公开(公告)号：US11587973B2
公开(公告)日：2023-02-21
申请号：US16852558
申请日：2020-04-20
发明人： Yu-Yun Lo , Sheng-Yuan Sun , Chih-Ling Wu , Yen-Yeh Chen
摘要： A micro light-emitting diode display panel includes a substrate, a plurality of pixel structures, and a plurality of wavelength conversion structures. The pixel structures are disposed on the substrate. Each pixel structure includes a plurality of micro light-emitting diodes. The micro light-emitting diodes are formed by a plurality of different portions of a connected epitaxial structure. The wavelength conversion structures are disposed in the epitaxial structure and are respectively aligned with at least a portion of the micro light-emitting diodes.
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公开(公告)号：US11567124B2
公开(公告)日：2023-01-31
申请号：US16896280
申请日：2020-06-09
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： G01R31/302 , H01L33/00
摘要： Herein disclosed are a wafer, a wafer testing system, and a method thereof. Said wafer testing method comprises the following steps. First, an incident light is provided toward a wafer. And, a wafer surface image corresponded to the wafer is generated. Then, determining whether the wafer surface image has a plurality of first strips and a plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical. When the wafer surface image has the plurality of first strips and the plurality of second strips, and the plurality of first strips and the plurality of second strips are symmetrical, a qualified signal corresponded to the wafer is provided.
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公开(公告)号：US20230006106A1
公开(公告)日：2023-01-05
申请号：US17543836
申请日：2021-12-07
发明人： Yu-Yun LO , Bo-Wei WU , Chang-Feng TSAI
IPC分类号： H01L33/48 , H01L25/075 , H01L33/38 , H01L33/12
摘要： A micro LED display device includes a display back plate having a first connecting electrode and a second connecting electrode, a micro LED structure disposed on the display back plate, and a first bonding structure and a second bonding structure disposed between the display back plate and the micro LED structure. The micro LED structure includes an epitaxial structure, and a first electrode and a second disposed on the side of the epitaxial structure closest to the display back plate. The orthogonal projections of the extension portions of the first electrode and the second electrode both exceed the orthogonal projection of the epitaxial structure on the display back plate. Neither the orthogonal projection of the first bonding structure nor the orthogonal projection of the second bonding structure overlaps the orthogonal projection of the bottom surface of the epitaxial structure on the display back plate.
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公开(公告)号：US20220415964A1
公开(公告)日：2022-12-29
申请号：US17728212
申请日：2022-04-25
发明人： Yun-Li LI , Kuan-Yung LIAO
摘要： A micro-LED display device mainly has a plurality of pixel areas arranged in matrix and a driving circuit. Each pixel area has a plurality of sub-pixel areas arranged adjacent to each other. In a first driving mode, the driving circuit enables the rows of pixel areas in sequence. When one of rows of pixel areas is enabled, the driving circuit controls one sub-pixel area of each pixel area on the enabled row of pixel areas to display an image color. In a second driving mode, the rows of pixel areas are also enabled in sequence. When one of rows of pixel area is enabled, the driving circuit drives all sub-pixel areas of each pixel area on the enabled row of pixel area to synchronously display the same image color. Therefore, a high-brightness requirement is met, and the overall power consumption is not increased.
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公开(公告)号：US20220415860A1
公开(公告)日：2022-12-29
申请号：US17701678
申请日：2022-03-23
发明人： Kuan-Yung Liao , Yun-Li Li , Chih-Ling Wu
IPC分类号： H01L25/075 , H01L21/683 , H01L33/00 , H01L33/62
摘要： A micro light emitting diode panel, including a circuit substrate, multiple transistor elements, and multiple micro light emitting diodes, is provided. The circuit substrate includes multiple signal lines, multiple bonding pads, and multiple thin film transistors. The bonding pads extend from at least part of the signal lines. The transistor elements are electrically bonded to a part of the bonding pads and are electrically connected to the thin film transistors. The micro light emitting diodes are electrically bonded to another part of the bonding pads and are electrically connected to the thin film transistors. The thin film transistors each have a first semiconductor pattern. The transistor elements each have a second semiconductor pattern. An electron mobility difference between the first semiconductor pattern and the second semiconductor pattern is greater than 30 cm2/V·s. A method of fabricating the micro light emitting diode panel is also provided.
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公开(公告)号：US20220406839A1
公开(公告)日：2022-12-22
申请号：US17517781
申请日：2021-11-03
发明人： YUN-LI LI
摘要： A micro light-emitting diode display device includes a circuit substrate and a plurality of display pixels. The display pixels are arranged on the circuit substrate and are respectively electrically connected to the circuit substrate. Each display pixel includes a plurality of micro light-emitting elements. In each display pixel, a part of the micro light-emitting elements form at least one series-connection structure, and the micro light-emitting elements of the series-connection structure are within a wavelength range of the same lighting color. The circuit substrate respectively provides a same driving voltage to drive the micro light-emitting elements included in the series-connection structure of each display pixel and the micro light-emitting elements excluded from the series-connection structure.
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80.发明申请公开(公告)号：US20220349057A1
公开(公告)日：2022-11-03
申请号：US17466235
申请日：2021-09-03
发明人： Yen-Lin LAI , Jyun-De WU , Chi-Heng CHEN
IPC分类号： C23C16/458 , H01L21/687 , C23C16/18
摘要： A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.
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