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公开(公告)号：US20240339505A1
公开(公告)日：2024-10-10
申请号：US18317944
申请日：2023-05-16
发明人： Shen-Jie Wang , Hsin-Chiao Fang , Yen-Lin Lai
IPC分类号： H01L29/205
CPC分类号： H01L29/205
摘要： An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.
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公开(公告)号：US20240128397A1
公开(公告)日：2024-04-18
申请号：US17989700
申请日：2022-11-18
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/0062 , H01L33/06 , H01L33/30 , H01L33/36
摘要： An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
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公开(公告)号：US11063181B2
公开(公告)日：2021-07-13
申请号：US16669526
申请日：2019-10-31
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai
IPC分类号： H01L33/20
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US11658268B2
公开(公告)日：2023-05-23
申请号：US17093590
申请日：2020-11-09
发明人： Hsin-Chiao Fang , Yen-Lin Lai , Jyun-De Wu
摘要： A light-emitting semiconductor substrate, which is applied to a light-emitting semiconductor structure, includes a base and a plurality of particle groups. The base includes an upper surface. The particle groups are on the upper surface or inside the base dispersedly, and each of the particle groups includes Sn, Sn compounds or combinations thereof.
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公开(公告)号：US11133447B2
公开(公告)日：2021-09-28
申请号：US16669525
申请日：2019-10-31
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai
IPC分类号： H01L33/58
摘要： A micro light-emitting device includes an epitaxial structure layer, a first-type electrode, a second-type electrode, and a light guide structure. The epitaxial structure layer has a top surface and a bottom surface opposite to each other and a plurality of first grooves located on the top surface. The first-type electrode and the second-type electrode separated from each other are disposed on the epitaxial structure layer and located at the bottom surface. The light guide structure is disposed on the epitaxial structure layer. The light guide structure covers a portion of the top surface and a portion of inner walls of the first grooves to define a plurality of second grooves corresponding to the portion of the first grooves.
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公开(公告)号：US20210265527A1
公开(公告)日：2021-08-26
申请号：US17243577
申请日：2021-04-29
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai , Shen-Jie Wang , Sheng-Yuan Sun
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US20200350473A1
公开(公告)日：2020-11-05
申请号：US16669525
申请日：2019-10-31
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai
IPC分类号： H01L33/58
摘要： A micro light-emitting device includes an epitaxial structure layer, a first-type electrode, a second-type electrode, and a light guide structure. The epitaxial structure layer has a top surface and a bottom surface opposite to each other and a plurality of first grooves located on the top surface. The first-type electrode and the second-type electrode separated from each other are disposed on the epitaxial structure layer and located at the bottom surface. The light guide structure is disposed on the epitaxial structure layer. The light guide structure covers a portion of the top surface and a portion of inner walls of the first grooves to define a plurality of second grooves corresponding to the portion of the first grooves.
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公开(公告)号：US11542604B2
公开(公告)日：2023-01-03
申请号：US16868539
申请日：2020-05-07
发明人： Jyun-De Wu , Yen-Lin Lai , Chi-Heng Chen
IPC分类号： C23C16/46 , C23C16/458 , H01L33/00
摘要： A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.
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公开(公告)号：US11189577B2
公开(公告)日：2021-11-30
申请号：US16840823
申请日：2020-04-06
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
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公开(公告)号：US20210327746A1
公开(公告)日：2021-10-21
申请号：US16882555
申请日：2020-05-25
发明人： Chi-Heng Chen , Jyun-De Wu , Yen-Lin Lai
IPC分类号： H01L21/687 , C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12
摘要： A tray structure adapted to a deposition apparatus is provided. The tray structure includes a first tray and a second tray, wherein the first tray is disposed on the deposition apparatus for control of temperature and includes a first carrying portion and at least one heat-conducting structure. The first carrying portion is disposed on a top surface of the first tray. The at least one heat-conducting structure is disposed in a recess of the first carrying portion. The second tray is disposed on the first carrying portion and the at least one heat-conducting structure.
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