公开(公告)号：US20040079897A1

公开(公告)日：2004-04-29

申请号：US10673820

申请日：2003-09-29

Applicant: SHIMADZU CORPORATION

Inventor： Tadayuki Fujiwara

IPC: H01J037/28

CPC classification number: H01J37/20 ,  H01J37/28 ,  H01J2237/20285 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A substrate testing apparatus for testing a substrate by irradiation of electron beam comprises a scan parameter calculating unit, a stage control unit for controlling the movement of a stage, and an electron beam control unit for controlling an irradiating position of electron beam. The scan parameter calculating unit calculates a stage speed and the irradiating position of electron beam on the basis of an array of measurement points in a unit area set for each substrate species of object to be tested. The scan parameters for the substrate species are automatically calculated, and the driving of the testing apparatus is controlled in accordance with the calculated parameters, whereby it is unnecessary to restart the software.

Abstract translation: 用于通过电子束的照射来测试衬底的衬底测试装置包括扫描参数计算单元，用于控制台的移动的台控制单元和用于控制电子束的照射位置的电子束控制单元。 扫描参数计算单元基于针对待测试物体的每个基底种类设置的单位面积中的测量点阵列来计算电子束的载物台速度和照射位置。 自动计算基板种类的扫描参数，根据计算出的参数来控制测试装置的驱动，由此不需要重新启动软件。

公开(公告)号：US20040065825A1

公开(公告)日：2004-04-08

申请号：US10664440

申请日：2003-09-18

Applicant: ADVANTEST CORPORATION

Inventor： Mitsuyuki Asaki ,  Akira Kintaka

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A pattern width measuring apparatus for accurately measuring pattern width of a pattern formed on a wafer using an electron beam. The pattern widthmeasuring apparatus includes: an electron gun for generating the electron beam; a deflector for scanning the pattern with the electron beam by deflecting the electron beam; a first secondary electron detector and a second secondary electron detector for detecting secondary electrons generated when the electron beam is irradiated on the pattern; a first edge detector for detecting position of a first edge of the pattern based on the quantity of the secondary electrons detected by the first secondary electron detector; a second edge detector for detecting position of a second edge of the pattern based on the quantity of the secondary electrons detected by the second secondary electron detector; and a pattern width computing section for computing pattern width of the pattern based on the position of the first edge and the position of the second edge detected by the first edge detector and the second edge detector.

Abstract translation: 一种用于使用电子束精确测量在晶片上形成的图案的图形宽度的图案宽度测量装置。 图案宽度测量装置包括：用于产生电子束的电子枪; 用于通过偏转电子束用电子束扫描图案的偏转器; 第一二次电子检测器和第二二次电子检测器，用于检测当电子束照射在图案上时产生的二次电子; 第一边缘检测器，用于基于由第一二次电子检测器检测到的二次电子的量来检测图案的第一边缘的位置; 第二边缘检测器，用于基于由第二二次电子检测器检测到的二次电子的量来检测图案的第二边缘的位置; 以及图案宽度计算部分，用于基于由第一边缘检测器和第二边缘检测器检测到的第一边缘的位置和第二边缘的位置来计算图案的图案宽度。

公开(公告)号：US20040051041A1

公开(公告)日：2004-03-18

申请号：US10643892

申请日：2003-08-20

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

IPC: H01J037/28

CPC classification number: H01J37/244 ,  G01N23/225 ,  G01R31/307 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/0535 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2817

Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

Abstract translation: 具有能量过滤器的扫描电子显微镜，其能够正确地利用与网状电极碰撞而损失的二次电子和/或反射电子。 具有用于产生用于对样品施加一次电子束产生的电子能量的电场的多孔电极的扫描电子显微镜和检测通过多孔电极的电子的第一电子检测器的特征在于还具有多孔结构 设置在样品附近，偏转器从一次电子束的轴线偏转电子;以及第二电子检测器，其检测偏转器偏转的电子。

公开(公告)号：US20040036021A1

公开(公告)日：2004-02-26

申请号：US10648388

申请日：2003-08-27

Applicant: Hitachi, Ltd.

Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

IPC: H01J037/28 ,  G01N023/225

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

公开(公告)号：US20040026619A1

公开(公告)日：2004-02-12

申请号：US10462596

申请日：2003-06-17

Inventor： Chil Hwan Oh ,  Jong Sub Moon ,  Min Gi Kim

IPC: H01J037/28 ,  G01N023/225

CPC classification number: G01N23/2251 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/226 ,  H01J2237/2611

Abstract: A method and apparatus for extracting three-dimensional data of an object using an electron microscope are provided. The method for extracting the three-dimensional data of the object includes: obtaining two-dimensional coordinates by respectively projecting the object on a plane perpendicular to an X-axis, on a plane perpendicular to a Y-axis, and on a plane making an angle of 45 degrees from a Z-axis with a Y-Z plane; in portions where three images including the two-dimensional coordinates overlapped, obtaining data of a pixel on a base images among the three images, obtaining data of corresponding pixels of the pixel on the base image to left and right images of the base image, and calculating a disparity on the basis of the data; and extracting three-dimensional depth information of the object using the obtained disparity, the three-dimensional depth information representing a relative distance of the object, and extracting a three-dimensional coordinate on each pixel to determine a three-dimensional location of the object.

Abstract translation: 提供一种使用电子显微镜提取物体的三维数据的方法和装置。 用于提取对象的三维数据的方法包括：通过在垂直于X轴的平面上垂直于Y轴并在垂直于Y轴的平面上分别投影物体来获得二维坐标 Z轴与YZ平面成45度角; 在包括二维坐标的三个图像重叠的部分中，获得三个图像之间的基本图像上的像素的数据，获得基本图像上的像素的相应像素的数据到基本图像的左右图像，以及 根据数据计算差距; 以及使用所获得的视差来提取所述对象的三维深度信息，所述三维深度信息表示所述对象的相对距离，并且提取每个像素上的三维坐标以确定所述对象的三维位置。

公开(公告)号：US20030213909A1

公开(公告)日：2003-11-20

申请号：US10463576

申请日：2003-06-18

Inventor： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

IPC: G01N023/225 ,  H01J037/28

CPC classification number: G06T7/0004 ,  G01N23/20 ,  G06T2207/30148 ,  H01J2237/2487 ,  H01J2237/2817

Abstract: A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.

Abstract translation: 一种图案检查系统，用于检查其上形成有电子束和光束的辐射的预定图案的基板表面。 图案检查系统包括辐射并且向基板辐射电子束，检测单元，其检测归因于电子束的辐射的次要生成的信号;检索单元，其从由检测单元检测到的信号中检索图像 以及图像处理单元，其根据图像的类型对检索到的图像进行分类。

公开(公告)号：US20030150991A1

公开(公告)日：2003-08-14

申请号：US10072805

申请日：2002-02-08

Applicant: JEOL Ltd.

Inventor： Hiroyoshi Kazumori

IPC: H01J037/28 ,  H01J037/244

CPC classification number: H01J37/244 ,  H01J2237/1405

Abstract: There is disclosed a scanning electron microscope capable of detecting secondary electrons emitted from a specimen, using a semi-in-lens type objective lens. A voltage is applied to the specimen from a power supply to decelerate the electron beam immediately ahead of the specimen. Secondary electrons produced from the specimen are confined by a magnetic lens field and move spirally upward. The secondary electrons moving upward travel linearly from a location where the magnetic field of the objective lens is weak. Then, the electrons strike first and second conversion electrodes, producing a large amount of secondary electrons. A voltage is applied to the front face of a detector to produce an electric field near the first opening in the inner polepiece. This field directs the secondary electrons toward the detector, where they are detected.

Abstract translation: 公开了能够使用半透镜型物镜来检测从试样发出的二次电子的扫描型电子显微镜。 从电源向试样施加电压，使电子束在试样前方减速。 从样品产生的二次电子被磁性透镜场限制，并向上螺旋移动。 向上移动的二次电子从物镜的磁场弱的位置线性移动。 然后，电子撞击第一和第二转换电极，产生大量二次电子。 电压被施加到检测器的正面以在内部极靴中的第一开口附近产生电场。 该场将二次电子引导到检测器，在那里检测它们。

公开(公告)号：US20030122074A1

公开(公告)日：2003-07-03

申请号：US10368440

申请日：2003-02-20

Applicant: Hitachi, Ltd.

Inventor： Naomasa Suzuki ,  Toshiro Kubo ,  Noriaki Arai ,  Mitsugu Sato ,  Hideo Todokoro ,  Yoichi Ose

IPC: H01J037/28

CPC classification number: H01J37/28 ,  H01J2237/04753 ,  H01J2237/04756

Abstract: Image observation at high resolution is realized and irregularity information of a sample is obtained. The reflected electrons 12a emitted in a direction at a small angle with the surface of the sample 8 are detected by the detectors 10a and 10b arranged on the side of the electron source 1 of the magnetic field leakage type object lens 7 and a sample image is formed. Irregularity information of the sample is obtained from the effects of light and shade appearing in the sample image.

Abstract translation: 实现高分辨率的图像观察，获得样品的不规则信息。 通过设置在磁场泄漏型物镜7的电子源1侧的检测器10a，10b来检测与样品8的表面小角度方向发射的反射电子12a，样本图像为 形成。 从样本图像中出现的光和阴影的效果获得样本的不规则信息。

公开(公告)号：US20030102430A1

公开(公告)日：2003-06-05

申请号：US10306596

申请日：2002-11-27

Inventor： Kouji Kimura ,  Hirotami Koike

IPC: H01J037/28 ,  H01J037/147

CPC classification number: H01J37/1478 ,  H01J2237/1534 ,  H01J2237/28

Abstract: A scanning electron microscope system with an electrostatic magnetic field complex objective lens, comprising at least two or more deflection means for tilting a primary electron beam and for projecting the primary electron beam onto a specimen, wherein one of the deflection means is arranged near the objective lens so as to generate a deflection field and also to serve as a compensation field for compensating abaxial aberration at the same time, and abaxial aberration of the primary electron beam deflected by the deflection means is compensated.

Abstract translation: 一种具有静电磁场复数物镜的扫描电子显微镜系统，包括至少两个或更多个偏转装置，用于使一次电子束倾斜并将一次电子束投射到样本上，其中一个偏转装置设置在物镜附近 以产生偏转场，并且还用作同时补偿背面像差的补偿场，补偿由偏转装置偏转的一次电子束的背面像差。

公开(公告)号：US20030080293A1

公开(公告)日：2003-05-01

申请号：US10274029

申请日：2002-10-21

Inventor： Yukari Dan ,  Ryuichiro Tamochi ,  Mitsugu Sato

IPC: H01J037/28

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/2605

Abstract: A scanning electron microscope is provided which is capable of efficiently detecting ions, such as primary electron excitation ions, reflection electron excitation ions or secondary electron excitation ions caused by a bias electric field, thereby obtaining an absorption current. A scanning electron microscope irradiates an electron beam to a sample while keeping a sample chamber pressure at 1 Pa or higher, to detect generated ions and display a sample image. An ion detecting electrode is provided exclusively for detecting ions. The ion detecting electrode is arranged nearby a path for accelerating ions by a bias electrode.