公开(公告)号：US20040029022A1

公开(公告)日：2004-02-12

申请号：US10215214

申请日：2002-08-08

Applicant: Micron Technology, Inc.

Inventor： Paul A. Farrar

IPC: G03F001/00 ,  G03F009/00 ,  G03F007/16 ,  G03F007/20 ,  G03F007/40 ,  G03B027/32 ,  G11C011/34 ,  G11C005/00 ,  G03B027/00 ,  G03B027/62 ,  G21K005/10 ,  H01J037/08 ,  G21G005/00 ,  A61N005/00 ,  G03B027/42

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  G03F7/70383 ,  G03F7/70533 ,  H01J37/3174 ,  H01J2237/30488 ,  H01L27/0207 ,  H01L27/222 ,  Y02P90/265

Abstract: The present subject matter allows non-orthogonal lines to be formed at the same thickness as the orthogonal lines so as to promote compact designs, to be formed with even line edges, and to be formed efficiently. One aspect of the present subject matter relates to a method for forming non-orthogonal images in a raster-based photolithographic system. According to various embodiments of the method, a first image corresponding to a first data set is formed on a reticle when the reticle is at a first rotational position null1. The reticle is adjusted to a second rotational position null2. A second image corresponding to a second data set is formed on the reticle when the reticle is at the second rotational position null2. The second image is non-orthogonal with respect to the first image. Other aspects are provided herein.

Abstract translation: 本主题允许以与正交线相同的厚度形成非正交线，从而促进紧凑的设计，形成均匀的线边缘，并且有效地形成。 本主题的一个方面涉及在基于光栅的光刻系统中形成非正交图像的方法。 根据该方法的各种实施例，当标线片处于第一旋转位置θ1时，在掩模版上形成对应于第一数据组的第一图像。 将掩模版调整到第二旋转位置θ2。 当标线片处于第二旋转位置θ2时，在掩模版上形成对应于第二数据组的第二图像。 第二图像相对于第一图像是非正交的。 本文提供了其他方面。

公开(公告)号：US20030228541A1

公开(公告)日：2003-12-11

申请号：US10167327

申请日：2002-06-10

Applicant: International Business Machines Corporation

Inventor： Louis L. Hsu ,  Carl J. Radens ,  Li-Kong Wang ,  Kwong Hon Wong

IPC: G03F007/20 ,  G02F001/1335 ,  G21K005/10 ,  H01J037/08 ,  G03B027/54 ,  G03B027/32 ,  G21G005/00 ,  G21K005/00

CPC classification number: G03F1/26 ,  G03F7/2014 ,  G03F7/70291

Abstract: An electronically programmable mask for lithography comprises an array of individually controllable light sources aligned with an array of individually controllable liquid crystals, so that individual pixels may be turned on or off and phase-shifted to provide a desired light intensity distribution on a wafer. The mask may be used in a contact printing mode or in a reduction projection mode.

Abstract translation: 用于光刻的电子可编程掩模包括与独立可控液晶阵列对准的独立可控光源的阵列，使得各个像素可以被导通或截止并相移以在晶片上提供期望的光强分布。 掩模可以以接触印刷模式或缩小投影模式使用。

公开(公告)号：US20030197129A1

公开(公告)日：2003-10-23

申请号：US10334136

申请日：2002-12-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Adrian John Murrell ,  Richard David Goldberg ,  Christopher J. S. Burgess ,  David George Armour ,  Erik J.H. Collart

IPC: H01J037/08

CPC classification number: H01J27/08 ,  H01J37/08

Abstract: The invention relates to improving the efficiency of ion flow from an ion source, by reducing heat loss from the source both in the ion chamber of the ion source and its constituent parts (e.g. the electron source). This is achieved by lining the interior of the ion chamber and/or the exterior with heat reflective and/or heat insulating material and by formation of an indirectly heated cathode tube such that heat transfer along the tube and away from the ion chamber is restricted by the formation of slits in the tube. Efficiency of the ion source is further enhanced by impregnating and/or coating the front plate of the ion chamber with a material which comprises an element or compound thereof, the ions of which element are the same specie as those to be implanted into the substrate from the source thereof.

公开(公告)号：US20030155534A1

公开(公告)日：2003-08-21

申请号：US10337903

申请日：2003-01-08

Inventor： Elmar Platzgummer ,  Hans Loeschner ,  Gerhard Stengl ,  Herbert Vonach ,  Alfred Chalupka ,  Gertraud Lammer ,  Herbert Buschbeck ,  Robert Nowak ,  Till Windischbauer

IPC: G21K005/10 ,  H01J037/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174

Abstract: A device (102) for defining a pattern, for use in a particle-beam exposure apparatus (100), said device adapted to be irradiated with a beam (lb,pb) of electrically charged particles and let pass the beam only through a plurality of apertures, comprises an aperture array means (203) and a blanking means (202). The aperture array means (203) has a plurality of apertures (21,230) of identical shape defining the shape of beamlets (bm). The blanking means (202) serves to switch off the passage of selected beamlets; it has a plurality of openings (220), each corresponding to a respective aperture (230) of the aperture array means (203) and being provided with a deflection means (221) controllable to deflect particles radiated through the opening off their path (p1) to an absorbing surface within said exposure apparatus (100). The apertures (21) are arranged on the blanking and aperture array means (202,203) within a pattern definition field (pf) being composed of a plurality of staggered lines (p1) of apertures. Each of the lines (p1) comprises alternately first segments (sf) which are free of apertures and second segments (af) which each comprise a number of apertures spaced apart by a row offset (pm), said row offset being a multiple of the width (w) of apertures, the length (A) of said first segments (sf) being greater than the row offset. In front of the blanking means (202) as seen in the direction of the particle beam, a cover means (201) is provided having a plurality of openings (210), each corresponding to a respective opening (230) of the blanking means and having a width (w1) which is smaller than the width (w2) of the openings (220) of the blanking array means.

Abstract translation: 一种用于限定用于粒子束曝光设备（100）的图案的设备（102），所述设备适于用带电粒子的光束（lb，pb）照射，并且仅使光束通过多个 的孔径包括孔径阵列装置（203）和消隐装置（202）。 孔径阵列装置（203）具有限定子束（bm）形状的相同形状的多个孔（21,230）。 消隐装置（202）用于切断所选子束的通过; 它具有多个开口（220），每个开口对应于孔阵列装置（203）的相应孔径（230），并且设置有偏转装置（221），该偏转装置可控制，以使通过开口辐射的颗粒偏离其路径（p1 ）到所述曝光装置（100）内的吸收表面。 孔（21）布置在由多个交错的孔（p1）组成的图案定义区域（pf）内的消隐和孔径阵列装置（202,203）上。 线（p1）中的每一个交替地包括没有孔的第一段（sf）和第二段（af），每个段包括通过行偏移（pm）间隔开的多个孔，所述行偏移是 孔的宽度（w），所述第一段（sf）的长度（A）大于行偏移。 在沿着该粒子束的方向观察的消隐装置（202）的前面，提供具有多个开口（210）的盖装置（201），每个开口对应于消隐装置的相应开口（230） 具有比消隐阵列装置的开口（220）的宽度（w2）小的宽度（w1）。

公开(公告)号：US20030122089A1

公开(公告)日：2003-07-03

申请号：US10307499

申请日：2002-12-02

Inventor： Adrian Murrell ,  Peter Michael Banks ,  Andrew Allen ,  Neil L. Clarke ,  Matthew Peter Dobson

IPC: H01J037/317 ,  H01J037/08

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: The invention relates to an ion source for an ion implanter in which source material for providing desired ions is provided in the form of a plate or liner which can be fitted into the reactant chamber of the ion source.

Abstract translation: 本发明涉及一种用于离子注入机的离子源，其中用于提供期望离子的源材料以可装配到离子源的反应物室中的板或衬里的形式提供。

公开(公告)号：US20030001109A1

公开(公告)日：2003-01-02

申请号：US10041607

申请日：2002-01-10

Applicant: Fujitsu Limited

Inventor： Masaru Morio ,  Tadaharu Katakura

IPC: G21K005/10 ,  H01J037/08

CPC classification number: H01J37/3045 ,  H01J37/3056

Abstract: FIB equipment, which irradiates a sample placed on a stage with a focused ion beam (FIB) to perform etching or pattern formation at the irradiation position, comprises an alignment mark formation unit to form an alignment mark by irradiating a periphery of a processing position with the FIB; and a processing position detection unit to superpose an optical microscope image of the area of the processing position at which the alignment mark is formed, and a scanning ion microscope image (SIM image) acquired by FIB irradiation, based on the alignment mark image, and to detect the processing position according to the superposed images.

Abstract translation: FIB设备照射放置在具有聚焦离子束（FIB）的台上的样品以在照射位置进行蚀刻或图案形成的FIB设备包括：对准标记形成单元，用于通过用处理位置的周边照射来形成对准标记; FIB; 以及处理位置检测单元，用于叠加形成对准标记的处理位置的区域的光学显微镜图像和通过FIB照射获取的扫描离子显微镜图像（SIM图像），基于对准标记图像，以及 以根据叠加的图像来检测处理位置。

公开(公告)号：US20020171049A1

公开(公告)日：2002-11-21

申请号：US10131080

申请日：2002-04-25

Inventor： Young-Soo Kwon

IPC: H01J037/08

CPC classification number: H01J37/3171

Abstract: A high-energy ion implanter for fabricating a semiconductor device includes a low-energy accelerator for converting a polarity of ions flowed in from an ion source; a stripper for converting the ions accelerated from the low-energy accelerator to positive ions in vacuum conditions; a high-energy accelerator for accelerating, in high-energy, the positive ions that are converted in the stripper; a turbo pump for providing vacuum conditions in the stripper; a current sensor for detecting currents to check for abnormal operating conditions of the turbo pump; and a central processing unit (CPU) that interrupts a circuit breaker to suspend the ion implanting process in response to the level of current detected in the current sensor. The high-energy ion implanter of the present invention is capable of preventing an unsuccessful ion implanting process by suspending operation thereof when abnormal operating conditions are detected.

Abstract translation: 用于制造半导体器件的高能离子注入机包括用于转换从离子源流入的离子的极性的低能量加速器; 用于在真空条件下将从低能促进剂加速的离子转化为正离子的汽提器; 用于在高能量下加速在汽提器中转化的正离子的高能促进剂; 用于在汽提器中提供真空条件的涡轮泵; 用于检测电流以检查涡轮泵的异常操作条件的电流传感器; 以及中央处理单元（CPU），其中断电路断路器以响应于在当前传感器中检测到的电流的电平来暂停离子注入过程。 本发明的高能离子注入机能够通过在检测到异常工作条件时暂停其操作来防止不成功的离子注入过程。

公开(公告)号：US20020134948A1

公开(公告)日：2002-09-26

申请号：US09815484

申请日：2001-03-23

Inventor： Joseph C. Olson ,  Rosario Mollica

IPC: G21K005/10 ,  H01J037/08

CPC classification number: G21K1/08 ,  H01J37/304 ,  H01J2237/3045 ,  H01J2237/31701

Abstract: Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.

Abstract translation: 提供了用于调整扫描离子束的轮廓的方法和装置。 测量未扫描离子束的空间分布。 以初始扫描速度扫描离子束，并测量扫描离子束的光束分布。 如果测量的光束轮廓不在规定范围内，则使用基于未扫描的离子束的空间分布的计算来确定产生期望的轮廓校正的扫描速度校正。 可以通过将候选扫描速度校正与未扫描离子束的空间分布进行卷积以产生结果并确定结果是否足够接近所需轮廓校正来确定扫描速度校正。 可以使用多维搜索算法来选择候选扫描速度校正。 以基于初始扫描速度和扫描速度校正的校正扫描速度扫描离子束，以产生校正的波束分布。

公开(公告)号：US20020122992A1

公开(公告)日：2002-09-05

申请号：US10061327

申请日：2002-02-04

Inventor： Shingo Kanamitsu

IPC: H01J037/08 ,  G21K005/10 ,  G01B011/00 ,  G03C005/00 ,  G06K009/00 ,  G03F009/00

CPC classification number: G03F1/72 ,  G03F1/26

Abstract: A method of correcting a photomask, comprises preparing a photomask substrate with a mask pattern including a phase shift pattern, forming a reference hole by removing a part of the mask pattern, applying an ion beam from an ion beam source to an area including the reference hole to allow secondary charged particles to be released from the reference hole, obtaining a position of the reference hole by detecting the secondary charged particles by a detector, calculating a positional relationship between the obtained position of the reference hole and a position of a defect of the mask pattern, and correcting the defect by applying an ion beam from the ion beam source to the defect, based on the calculated positional relationship, wherein a pattern of the reference hole, as viewed in a direction perpendicular to a top surface of the photomask substrate, is substantially rectangular, and a longitudinal direction of the rectangular pattern is parallel to a longitudinal direction of the phase shift pattern.

Abstract translation: 一种校正光掩模的方法，包括：制备具有包括相移图案的掩模图案的光掩模基板，通过去除一部分掩模图案形成参考孔，将来自离子束源的离子束施加到包括基准的区域 孔，以使二次带电粒子从参考孔释放，通过检测器检测二次带电粒子获得参考孔的位置，计算获得的基准孔位置与缺陷位置之间的位置关系 掩模图案，并且基于计算的位置关系，通过将来自离子束源的离子束施加到缺陷来校正缺陷，其中，在垂直于光掩模的顶表面的方向上观察参考孔的图案 衬底基本上是矩形的，并且矩形图案的纵向方向平行于所述phas的纵向方向 e移位模式

公开(公告)号：US20020109106A1

公开(公告)日：2002-08-15

申请号：US09990848

申请日：2001-11-21

Inventor： Donald W. Berrian ,  John D. Pollock ,  John W. Vanderpot

IPC: H01J037/08

CPC classification number: H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/304

Abstract: An ion implantation system contains, in the ion implantation chamber, a workpiece holder that scans vertically while tilting a wafer at an angle of rotation that is rotated out of a perpendicular orientation with respect to the axis of projection in an ion beam. The implant angle into an implant surface on wafer that is retained by the workpiece holder is adjusted by selective rotation of the workpiece holder about its path of motion. A Faraday cup scans the ion beam along the intended location of the implant surface to form a setup measurement plane. The ion beam quality is adjusted to enhance beam uniformity along the setup plane according to these tilt-angle measurements. A charge neutralizing device, such as a flood gun, is moved in operational alignment with the workpiece.

Abstract translation: 离子注入系统在离子注入室中包含垂直扫描的工件保持器，同时以相对于离子束中的突出轴线的垂直取向旋转的旋转角度倾斜晶片。 通过工件保持器围绕其运动路径的选择性旋转来调节进入工件保持器所保持的晶片上植入物表面的植入角度。 法拉第杯沿着植入物表面的预期位置扫描离子束以形成设置测量平面。 根据这些倾斜角测量，调整离子束质量以提高沿着设置平面的光束均匀性。 电荷中和装置，例如喷枪，与工件运动对准地移动。