公开(公告)号：US20210296093A1

公开(公告)日：2021-09-23

申请号：US17190552

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A disclosed plasma processing apparatus includes a substrate support. The substrate support has a first region configured to support a substrate and a second region configured to support an edge ring. The first electrode is provided in the first region. The second electrode is provided in the second region. The first bias power source is connected to the first electrode via the first circuit. The second bias power source is connected to the second electrode via the second circuit. The second circuit has impedance higher than impedance of the first circuit at a common bias frequency of a first electrical bias generated by the first bias power source and a second electrical bias generated by the second bias power source.

公开(公告)号：US20210296091A1

公开(公告)日：2021-09-23

申请号：US17190590

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: In a disclosed inspection method, a substrate and an edge ring are placed on first and second regions, respectively. A first inspection circuit is connected to the substrate. The first inspection circuit has impedance. A second inspection circuit is connected to the edge ring. The second inspection circuit has impedance. A first electrical bias and a second electrical bias having a common bias frequency are applied to a first electrode in the first region and a second electrode in the second region, respectively. A voltage waveform of the substrate and a voltage waveform of the edge ring is acquired by using a waveform monitor.

公开(公告)号：US20200185193A1

公开(公告)日：2020-06-11

申请号：US16699289

申请日：2019-11-29

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A substrate support is provided in a chamber of a plasma processing apparatus according to an exemplary embodiment. The substrate support has a lower electrode and an electrostatic chuck. A matching circuit is connected between a power source and the lower electrode. A first electrical path connects the matching circuit and the lower electrode to each other. A second electrical path different from the lower electrode is provided to supply electric power from the matching circuit to a focus ring. A sheath adjuster is configured to adjust a position of an upper end of a sheath on/above the focus ring. A variable impedance circuit is provided on the first or second electrical path.

公开(公告)号：US20190115188A1

公开(公告)日：2019-04-18

申请号：US16214599

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20160195436A1

公开(公告)日：2016-07-07

申请号：US15073273

申请日：2016-03-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun ABE ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01K11/00

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

公开(公告)号：US20150185092A1

公开(公告)日：2015-07-02

申请号：US14580460

申请日：2014-12-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K17/20 ,  G01J9/02 ,  H05H1/24 ,  G01N21/17

CPC classification number: G01K17/20 ,  G01J2005/583 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H05H1/0043 ,  H05H1/24

Abstract: In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiatated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. Current temperatures of the first layer and the third layer are obtained based on the measured first length, the measured second length, and data representing thermal-optical path length relationship. A heat flux flowing through the heat-flux measuring member is calculated based on the obtained temperatures, and a thickness and a thermal conductivity of the second layer.

Abstract translation: 在利用热通量测量在基板处理室中产生的等离子体的离子通量的热通量测量方法中，将热量测量部件暴露于等离子体并用低相干光照射。 热通量测量部件具有三层结构，其中使用来自热交换器的反射光的光学干涉来测量第一层和第三层中的低相干光的第一长度和第二长度的光路， 焊剂测量部件。 基于所测量的第一长度，测量的第二长度和表示热 - 光路长度关系的数据，获得第一层和第三层的当前温度。 基于获得的温度，第二层的厚度和热导率计算流过热通量测量部件的热通量。

公开(公告)号：US20150170882A1

公开(公告)日：2015-06-18

申请号：US14565612

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC classification number: H01J37/32577 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32165 ,  H01J37/32541 ,  H01J37/32568

Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract translation: 公开了一种等离子体处理装置，其包括：室，被配置为通过等离子体对晶片进行处理; VF电源，被配置为改变要供给到所述室中的高频功率的频率;基座，被配置为将晶片安装在其上; 以及设置成围绕晶片的聚焦环。 从VF电源开始通过等离子体的第一路径通过基座，晶片和等离子体，并且从VF电源开始通过等离子体的第二路径通过基座， 聚焦环和等离子体。 第一路径的反射最小频率不同于第二路径的反射最小频率，并且由VF电源可变的频率范围包括第一和第二路线的反射最小频率。

公开(公告)号：US20140216346A1

公开(公告)日：2014-08-07

申请号：US14250514

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20250069851A1

公开(公告)日：2025-02-27

申请号：US18944017

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply system. The substrate support is in the chamber and includes a central portion on which a substrate is placeable. The radio-frequency power supply generates source radio-frequency power. The bias power supply system respectively provides first electrical bias energy and second electrical bias energy to a first electrode and a second electrode. The first electrode is at least in the central portion of the substrate support. The second electrode is in an outer portion located outward from the central portion in a radial direction that is radial from a center of the central portion. The bias power supply system adjusts the first and second electrical bias energy to increase electric field strength above one of the central portion or the outer portion earlier than electric field strength above the other portion.

公开(公告)号：US20240429033A1

公开(公告)日：2024-12-26

申请号：US18825163

申请日：2024-09-05

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus disclosed herein includes a first baffle plate and a second baffle plate. The first baffle plate and the second baffle plate are disposed between a processing space and an exhaust space in a chamber. The second baffle plate is provided downstream of the first baffle plate in a flow of gas in the chamber. In at least a partial period of a waveform cycle of an electric bias energy periodically applied to a substrate support in the chamber, a value of a voltage that is applied to the second baffle plate is higher than a value of a voltage that is applied to the first baffle plate.