公开(公告)号：US20200220043A1

公开(公告)日：2020-07-09

申请号：US16786004

申请日：2020-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  H01L33/34 ,  H01L33/32 ,  H01L33/30 ,  H01L33/28 ,  H01L33/24 ,  C09K11/88 ,  C09K11/70 ,  C09K11/61 ,  C09K11/02

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20190326539A1

公开(公告)日：2019-10-24

申请号：US16356148

申请日：2019-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young CHUNG ,  Moon Gyu HAN ,  Oul CHO ,  Tae Hyung KIM ,  Sujin PARK ,  Hongkyu SEO ,  Eun Joo JANG

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand having a hole transporting property is attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a second ligand having an electron transporting property is attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the first ligand in a solvent is different than a solubility of the second ligand in the solvent and a display device including the same.

公开(公告)号：US20190280231A1

公开(公告)日：2019-09-12

申请号：US16297833

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Eun Joo JANG ,  Dae Young CHUNG ,  Yong Wook KIM ,  Yuho WON ,  Oul CHO

IPC: H01L51/50 ,  C09K11/88 ,  H01L51/00

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

公开(公告)号：US20190276737A1

公开(公告)日：2019-09-12

申请号：US16298108

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Sung Woo KIM ,  Jin A KIM ,  Jeong Hee LEE ,  Tae Hyung KIM ,  Eun Joo JANG

IPC: C09K11/88 ,  H01L51/50

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US20190257003A1

公开(公告)日：2019-08-22

申请号：US16281232

申请日：2019-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A. KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: C30B29/48 ,  C01G9/08 ,  H01L51/50

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US20170329068A1

公开(公告)日：2017-11-16

申请号：US15471033

申请日：2017-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul CHO ,  Eun Joo JANG ,  Hyun A KANG ,  Tae Hyung KIM ,  Jeong Hee LEE

IPC: F21V8/00 ,  H01L33/50

Abstract: A light conversion device includes a frame through which incident light is received from a light source and converted light is emitted from the light conversion device, the frame including: an opening through which light of a first color is received from the light source and from which light of a second color is emitted from the light conversion device, and a wall which surrounds the opening, a substrate in the opening and supported by the wall, a light conversion layer which is disposed on the substrate and receives the light of the first color from the light source, the light conversion layer including a light converting particle which converts the light of the first color to the light of the second color, a first inorganic layer disposed on the light conversion layer, and a first organic layer disposed on the first inorganic layer.

公开(公告)号：US20170115561A1

公开(公告)日：2017-04-27

申请号：US15295332

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeyeon YANG ,  Tae Hyung KIM ,  Shang Hyeun PARK ,  Shin Ae JUN ,  Yong Seok HAN ,  Eun Joo JANG ,  Deukseok CHUNG

IPC: G03F7/00 ,  G03F7/20 ,  G03F7/004 ,  G03F7/40 ,  G03F7/033 ,  G03F7/031 ,  G03F7/16 ,  G03F7/32

CPC classification number: G03F7/0007 ,  G03F7/0045 ,  G03F7/0047 ,  G03F7/027 ,  G03F7/028 ,  G03F7/031 ,  G03F7/033 ,  G03F7/105 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/322 ,  G03F7/40

Abstract: A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: a plurality of quantum dots; a color filter material including an absorption dye, an absorption pigment, or a combination thereof; a polymer binder; a photopolymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a photoluminescence peak wavelength (PL peak wavelength) of the quantum dot and a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per 10 parts by weight of the plurality of quantum dots.

公开(公告)号：US20230272277A1

公开(公告)日：2023-08-31

申请号：US18301357

申请日：2023-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Hyun A KANG ,  Eun Joo JANG ,  Dae Young CHUNG

IPC: C09K11/70 ,  H10K50/15 ,  H10K50/16

CPC classification number: C09K11/703 ,  H10K50/15 ,  H10K50/16 ,  B82Y20/00

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US20230180498A1

公开(公告)日：2023-06-08

申请号：US18101603

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A KIM ,  Yuho WON ,  Sung Woo KIM ,  Tae Hyung KIM ,  Jeong Hee LEE ,  Eun Joo JANG

IPC: H10K50/115

CPC classification number: H10K50/115

Abstract: Quantum dots and electroluminescent devices including the same, wherein the quantum dots include a core including a first semiconductor nanocrystal including a zinc chalcogenide; and a shell disposed on the core, the shell including zinc, sulfur, and selenium, wherein the quantum dots have an average particle size of greater than 10 nm, wherein the quantum dots do not include cadmium, and wherein a photoluminescent peak of the quantum dots is present in a wavelength range of greater than or equal to about 430 nm and less than or equal to about 470 nm.

公开(公告)号：US20220149311A1

公开(公告)日：2022-05-12

申请号：US17515784

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu SEO ,  Tae Hyung KIM ,  Eun Joo JANG ,  Won Sik YOON ,  Hyo Sook JANG ,  Oul CHO

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).