PIEZOELECTRIC ACTUATOR
    61.
    发明申请
    PIEZOELECTRIC ACTUATOR 有权
    压电致动器

    公开(公告)号:US20150145380A1

    公开(公告)日:2015-05-28

    申请号:US14169915

    申请日:2014-01-31

    CPC classification number: H01L41/0471 H01L41/0973

    Abstract: There is provided a piezoelectric actuator including: a piezoelectric member having a multilayer structure; an external electrode formed on an outer surface of the piezoelectric member; and an intermediate electrode formed between layers of the piezoelectric members and having an area smaller than that of the external electrode.

    Abstract translation: 提供一种压电致动器,包括:具有多层结构的压电元件; 形成在所述压电部件的外表面上的外部电极; 以及形成在所述压电部件的层之间并且具有比所述外部电极的面积小的面积的中间电极。

    TOUCH SENSOR
    62.
    发明申请
    TOUCH SENSOR 审中-公开
    触摸传感器

    公开(公告)号:US20150103271A1

    公开(公告)日:2015-04-16

    申请号:US14499179

    申请日:2014-09-28

    CPC classification number: G06F3/044 G06F2203/04103 Y10T428/24777

    Abstract: Disclosed herein is provided with a touch sensor, including: a window substrate; a first bezel layer formed at an edge portion of the window substrate and formed of at least one layer; and a resin layer disposed on the first bezel layer and the window substrate. The touch sensor further includes a second bezel layer disposed on the resin layer, at a position corresponding to the first bezel layer and the resin layer is made of a transparent material having a refractive index lower than that of the first bezel layer and the second bezel layer. As described above, the plurality of bezel layers and the resin layer are stacked together to form a difference in refractive index, thereby implementing a clear color even by the thinner bezel layer.

    Abstract translation: 本文公开了一种触摸传感器,包括:窗基板; 形成在所述窗基板的边缘部分并由至少一层形成的第一边框层; 以及设置在第一边框层和窗基板上的树脂层。 触摸传感器还包括设置在树脂层上的第二边框层,在与第一边框层相对应的位置处,树脂层由折射率低于第一边框层和第二边框层的折射率的透明材料制成 层。 如上所述,多个表圈层和树脂层堆叠在一起以形成折射率差,从而即使通过较薄的边框层也能实现清晰的颜色。

    BULK ACOUSTIC RESONATOR PACKAGE
    64.
    发明公开

    公开(公告)号:US20230198501A1

    公开(公告)日:2023-06-22

    申请号:US17989198

    申请日:2022-11-17

    CPC classification number: H03H9/205 H03H9/13 H03H9/568

    Abstract: A bulk acoustic resonator package includes a substrate, a cap, and first and second bulk acoustic resonators each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction in which the substrate and the cap face each other, and disposed between the substrate and the cap, wherein the first and second bulk acoustic resonators form a bandwidth based on first and second resonant frequencies different from each other and first and second antiresonant frequencies different from each other, a difference between the first and second resonant frequencies exceeds 200 MHz, the first bulk acoustic resonator is disposed closer to the substrate than to the cap, and the second bulk acoustic resonator is disposed closer to the cap than to the substrate.

    BULK ACOUSTIC RESONATOR FILTER AND BULK ACOUSTIC RESONATOR FILTER MODULE

    公开(公告)号:US20230188114A1

    公开(公告)日:2023-06-15

    申请号:US17875503

    申请日:2022-07-28

    CPC classification number: H03H9/566 H03H9/205 H03H9/02157

    Abstract: A bulk acoustic resonator filter includes a plurality of bulk acoustic resonators connected between first and second radio frequency (RF) ports to form a frequency band, wherein each of the plurality of bulk acoustic resonators includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, the plurality of bulk acoustic resonators include first and second bulk acoustic resonators having different differences between a resonant frequency and an antiresonant frequency, and different ratios of a thickness of the piezoelectric layer to a total thickness of the first and second electrodes, and/or different thicknesses of the piezoelectric layer.

    ACOUSTIC RESONATOR PACKAGE
    66.
    发明申请

    公开(公告)号:US20230008635A1

    公开(公告)日:2023-01-12

    申请号:US17554326

    申请日:2021-12-17

    Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator, and an outer portion disposed outside of the central portion and having a bonding surface. The outer portion includes protrusions in contact with the bonding portion, and at least one trench disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first protective layer and the second protective layer being disposed on a region of the bonding surface formed on each of the protrusions.

    ACOUSTIC RESONATOR FILTER
    67.
    发明申请

    公开(公告)号:US20220069800A1

    公开(公告)日:2022-03-03

    申请号:US17106415

    申请日:2020-11-30

    Abstract: An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

    BULK-ACOUSTIC WAVE RESONATOR
    70.
    发明申请

    公开(公告)号:US20210006226A1

    公开(公告)日:2021-01-07

    申请号:US16591862

    申请日:2019-10-03

    Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or may be thinner than the first electrode.

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