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    A SEMICONDUCTOR DEVICE INCLUDING A MOSFET WITH NITRIDE SIDE WALL
    61.
    发明申请
    A SEMICONDUCTOR DEVICE INCLUDING A MOSFET WITH NITRIDE SIDE WALL 有权
    包括具有氮化物侧壁的MOSFET的半导体器件

    公开(公告)号：US20050087799A1

    公开(公告)日：2005-04-28

    申请号：US10992082

    申请日：2004-11-19

    申请人： Masahiro Yoshida ,  Shunichi Tokitoh

    发明人： Masahiro Yoshida ,  Shunichi Tokitoh

    IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L31/119

    CPC分类号： H01L29/6659 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/7833

    摘要： A semiconductor device includes a semiconductor substrate, a gate insulating layer, a gate electrode structure and a side wall structure. The gate insulating layer is formed on the semiconductor substrate. The gate electrode structure is formed on the gate insulating layer, and includes a lower gate electrode layer and a cap gate layer. The side wall structure includes a nitride side wall spacer, and an oxide layer formed between the semiconductor substrate and the nitride side wall spacer and between the lower gate electrode layer and the nitride side wall spacer. A thickness of the oxide layer is greater than a thickness of the gate insulating layer, so as to prevent diffusion of nitrogen from the nitride side wall spacer to the semiconductor substrate. A height of the gate electrode structure is substantially equal to a height of the side wall structure after completion of the semiconductor device.

    摘要翻译： 半导体器件包括半导体衬底，栅极绝缘层，栅电极结构和侧壁结构。 栅绝缘层形成在半导体衬底上。 栅电极结构形成在栅极绝缘层上，并且包括下栅极电极层和盖栅极层。 侧壁结构包括氮化物侧壁间隔物和形成在半导体衬底和氮化物侧壁间隔物之间​​以及下部栅极电极层和氮化物侧壁间隔物之间​​的氧化物层。 氧化物层的厚度大于栅极绝缘层的厚度，以防止氮从氮化物侧壁间隔物扩散到半导体衬底。 栅电极结构的高度与半导体器件完成后的侧壁结构的高度基本相等。

    Semiconductor storage device and refresh control method thereof
    62.
    发明申请
    Semiconductor storage device and refresh control method thereof 有权
    半导体存储装置及其刷新控制方法

    公开(公告)号：US20050047239A1

    公开(公告)日：2005-03-03

    申请号：US10500400

    申请日：2002-12-25

    申请人： Hiroyuki Takahashi ,  Takuya Hirota ,  Noriaki Komatsu ,  Atsushi Nakagawa ,  Susumu Takano ,  Masahiro Yoshida ,  Yuuji Torige ,  Hideo Inaba

    发明人： Hiroyuki Takahashi ,  Takuya Hirota ,  Noriaki Komatsu ,  Atsushi Nakagawa ,  Susumu Takano ,  Masahiro Yoshida ,  Yuuji Torige ,  Hideo Inaba

    IPC分类号： G11C11/403 ,  G11C11/406 ,  G11C7/00

    CPC分类号： G11C11/40603 ,  G11C11/406

    摘要： Refresh of memory cells is performed periodically by a refresh timer, and collision between memory access and memory refresh is avoided. When memory access occurs, an F/F 163 is set by a one shot pulse from an OS circuit 161, a memory access request is inputted to a memory accessing pulse generator circuit 171 through a NOR gate 167, and a latch control signal LC and an enable signal REN are outputted. When a refresh request from the refresh timer is inputted to an AND gate 168 during the memory access, the output of the NOR gate 167 is at the “L” level, and the refresh request is blocked by the AND gate 168. Thereafter, at the time when the latch control signal LC is turned into the “L” level, F/Fs 163, 164 and 165 are reset, the output of the NOR gate 167 is turned into the “H” level, the refresh request is inputted to a refreshing pulse generator circuit 170, and a refresh enable signal RERF is outputted.

    摘要翻译： 通过刷新定时器周期性地执行存储器单元的刷新，并避免存储器访问和存储器刷新之间的冲突。 当存储器访问发生时，通过来自OS电路161的单触发脉冲设置F / F 163，通过NOR门167将存储器访问请求输入到存储器访问脉冲发生器电路171，以及锁存控制信号LC和 输出使能信号REN。 当在存储器访问期间来自刷新定时器的刷新请求被输入到与门168时，或非门167的输出处于“L”电平，刷新请求由与门168阻止。此后， 当锁存控制信号LC变为“L”电平时，F / F 163,164和165被复位，或非门167的输出变成“H”电平，刷新请求被输入到 输出刷新脉冲发生器电路170和刷新使能信号RERF。

    Boot structure fitting for mechanical joint
    63.
    发明申请
    Boot structure fitting for mechanical joint 有权
    机械接头引导结构接头

    公开(公告)号：US20050026706A1

    公开(公告)日：2005-02-03

    申请号：US10886543

    申请日：2004-07-09

    申请人： Isashi Kashiwagi ,  Masahiro Yoshida

    发明人： Isashi Kashiwagi ,  Masahiro Yoshida

    IPC分类号： F16J15/52 ,  F16D3/84 ,  F16J3/04

    CPC分类号： F16J3/042 ,  F16D3/845 ,  Y10T403/31

    摘要： A boot structure fitting into an axial component to protect from wrong environment including outside dust. Said boot has a pair of annular grooves and an annular lip between said pair of annular grooves on inner surface of said boot. Said annular lip is formed so that the annular lip top is not projected from inner surface to centerline of the boot. An annular protuberance means between said boot and clamping means, through which clamping force from said clamping means is exerted in concentration to said annular lip so that said annular lip is elastically deformed and pushed to outside of said axial component. Therefore, the axial component enables to be inserted into the boot without interference between the annular lip and the axial component. Furthermore, the annular lip becomes to be free from damage by interference between the annular lip and the axial component.

    摘要翻译： 安装在轴向部件中的靴子结构，以防止包括外部灰尘在内的错误环境。 所述靴子具有一对环形槽和在所述靴子的内表面上的所述一对环形槽之间的环形唇缘。 所述环形唇形成为使得环形唇顶不从靴的内表面到中心线突出。 一种位于所述护罩和夹紧装置之间的环形突起装置，来自所述夹持装置的夹紧力通过所述环形凸起集中施加到所述环形唇缘上，使得所述环形唇缘弹性变形并被推到所述轴向部件的外部。 因此，轴向部件能够在环形唇缘和轴向部件之间不受干扰地插入靴子中。 此外，环形唇缘变得不受环形唇缘和轴向部件之间的干涉的损害。

    Electromagnetic valve
    64.
    发明授权
    Electromagnetic valve 有权
    电磁阀

    公开(公告)号：US06527249B2

    公开(公告)日：2003-03-04

    申请号：US09864209

    申请日：2001-05-25

    申请人： Shigeki Niimi ,  Masahiro Yoshida ,  Kazuhiro Matsukawa

    发明人： Shigeki Niimi ,  Masahiro Yoshida ,  Kazuhiro Matsukawa

    IPC分类号： F16K3102

    CPC分类号： F16K31/0613 ,  Y10T137/8671

    摘要： An electromagnetic valve comprises a case having a cylindrical portion, a yoke having a large diameter portion and a small diameter portion, and a sleeve having at least two ports and receiving a valve member therein so as to perform reciprocating motion. The large diameter portion of the yoke is fluid-tightly pressed into the inner circumferential surface of the cylindrical portion of the case, and the inner circumferential surface of the sleeve is fluid-tightly pressed onto the outer circumferential surface of the small diameter portion of the yoke.

    摘要翻译： 电磁阀包括具有圆柱形部分的壳体，具有大直径部分和小直径部分的轭，以及具有至少两个端口并且在其中容纳阀构件以便执行往复运动的套筒。 轭的大直径部分被流体地压入壳体的圆筒部的内周面，并且套筒的内周面被流体地压紧到位于壳体的小直径部的外周面上 轭。

    Brake disk
    65.
    发明授权
    Brake disk 失效
    制动盘

    公开(公告)号：US06491142B2

    公开(公告)日：2002-12-10

    申请号：US09820917

    申请日：2001-03-30

    申请人： Kyo Takahashi ,  Masahiro Yoshida ,  Hisayoshi Kageyama

    发明人： Kyo Takahashi ,  Masahiro Yoshida ,  Hisayoshi Kageyama

    IPC分类号： F16D6512

    CPC分类号： F16D69/04 ,  F16D65/12 ,  F16D2065/132 ,  F16D2065/1384 ,  F16D2200/0017 ,  F16D2200/003 ,  F16D2250/0076

    摘要： A brake disk having a disk body formed of a titanium alloy, and inner and outer friction members formed of a stainless steel and bonded to opposite surfaces of the disk body by a brazing method is disclosed. The friction members can be simply bonded to the opposite surfaces of the disk body in a manner that provides a lightweight brake disk while simultaneously suppressing cost.

    摘要翻译： 公开了一种具有由钛合金形成的盘体的制动盘，以及由不锈钢形成并通过钎焊方法结合到盘体的相对表面的内摩擦构件和外摩擦构件。 摩擦构件可以简单地结合到盘体的相对表面，从而提供轻便的制动盘同时抑制成本。

    Method of manufacturing semiconductor memory device having a capacitor
    67.
    发明授权
    Method of manufacturing semiconductor memory device having a capacitor 失效
    具有电容器的半导体存储器件的制造方法

    公开(公告)号：US06333226B1

    公开(公告)日：2001-12-25

    申请号：US09425172

    申请日：1999-10-22

    申请人： Masahiro Yoshida ,  Hideyuki Ando

    发明人： Masahiro Yoshida ,  Hideyuki Ando

    IPC分类号： H01L218242

    CPC分类号： H01L27/10852 ,  H01L27/10817

    摘要： Disclosed herein is a semiconductor memory device. In the semiconductor memory device, a transfer transistor having a drain region and a source region is formed on an Si semiconductor substrate. A lower end of a storage node is electrically connected to the drain region through a drain contact hole defined in an interlayer insulator. The storage node has an on-film extending portion which extends on an upper surface of the interlayer insulator, and a fin-shaped electrode portion which protrudes from the on-film extending portion. Structurally, the fin-shaped electrode portion is provided within a capacitor region so as to extend within a region smaller than the capacitor region and is spaced away from the on-film extending portion on the side of a bit line contact hole defined in the interlayer insulator.

    摘要翻译： 这里公开了一种半导体存储器件。 在半导体存储器件中，在Si半导体衬底上形成具有漏极区域和源极区域的转移晶体管。 存储节点的下端通过限定在层间绝缘体中的漏极接触孔电连接到漏极区域。 存储节点具有在层间绝缘体的上表面上延伸的膜上延伸部分和从膜上延伸部分突出的鳍状电极部分。 在结构上，鳍状电极部分设置在电容器区域内，以便在小于电容器区域的区域内延伸，并且与位于中间层中限定的位线接触孔侧的膜上延伸部分间隔开 绝缘子。

    Process for synthesizing metallocene compounds
    69.
    发明授权
    Process for synthesizing metallocene compounds 失效
    合成茂金属化合物的方法

    公开(公告)号：US5892075A

    公开(公告)日：1999-04-06

    申请号：US936169

    申请日：1997-09-23

    申请人： Kunihiko Murata ,  Junichi Hori ,  Masahiro Yoshida

    发明人： Kunihiko Murata ,  Junichi Hori ,  Masahiro Yoshida

    IPC分类号： C07F17/00 ,  C07F7/00

    CPC分类号： C07F17/00 ,  Y10S526/943

    摘要： The object of the invention resides in the development of an improved process for synthesizing metallocene compounds useful as olefin polymerization catalysts.A new process for synthesizing metallocene compounds of formulae (IV) and (IV') comprises a reaction of formula (I) with formula (II) or (II') to afford formula (III) or (III'), and then a reaction of a halogenating agent.In formulae (IV) and (IV') described below, M.sup.1 is a group IV transition-metal atom, L.sup.1 and L.sup.2 can be each other identical or different and are substituted or unsubstituted cyclopentadienyl, substituted or unsubstituted indenyl or substituted or unsubstituted fluorenyl groups, B is a hydrocarbon having 1-20 carbon atoms, silylene having 1-20 carbon atoms, oligosilylene or germylene groups, binding to L.sup.1 and L.sup.2, Y can be identical or different and is each independently of one another a halogen atom. Further, M.sup.1 can be coordinated with an ether or an amine at any coordination number. ##STR1##

    摘要翻译： 本发明的目的在于开发可用作烯烃聚合催化剂的金属茂化合物的改进方法。 用于合成式（IV）和（IV'）的茂金属化合物的新方法包括式（I）与式（II）或（II'）的反应，得到式（III）或（III'），然后 卤化剂的反应。 在下述式（IV）和（IV'）中，M1是IV族过渡金属原子，L1和L2可以彼此相同或不同，并且是取代或未取代的环戊二烯基，取代或未取代的茚基或取代或未取代的芴基 B是具有1-20个碳原子的烃，具有1-20个碳原子的亚甲硅基，低级亚烯基或亚甲硅烷基，与L1和L2结合，Y可以相同或不同，并且各自独立地为卤素原子。 此外，M1可以任何配位数与醚或胺配位。 反应方案2