公开(公告)号：US20070139856A1

公开(公告)日：2007-06-21

申请号：US11531474

申请日：2006-09-13

申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US07030335B2

公开(公告)日：2006-04-18

申请号：US10028922

申请日：2001-12-19

申请人： Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

发明人： Daniel J. Hoffman ,  Gerald Zheyao Yin ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

IPC分类号： B23K10/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

公开(公告)号：US06676760B2

公开(公告)日：2004-01-13

申请号：US09930938

申请日：2001-08-16

申请人： Arnold V. Kholodenko ,  Dan Katz ,  Wing L. Cheng

发明人： Arnold V. Kholodenko ,  Dan Katz ,  Wing L. Cheng

IPC分类号： C23C1600

CPC分类号： C23C16/45519 ,  C23C16/455

摘要： A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

摘要翻译： 基板处理室具有用于支撑基板的基板支撑件和围绕基板支撑件的排气导管。 第一工艺气体分配器以第一流量引导诸如非反应性气体的第一工艺气体，例如基板周边和朝向排气管道，以在衬底周围形成非反应性气体帘幕。 第二工艺气体分配器以比第一流量低的第二流量向衬底的中心部分引导第二工艺气体，例如反应性CVD或蚀刻剂气体。 气体激发器激励腔室中的第一和第二处理气体。 控制器操作衬底支撑件，气体流量计，气体激励器和节流阀，以处理通电气体中的衬底。

公开(公告)号：US06189484B1

公开(公告)日：2001-02-20

申请号：US09263642

申请日：1999-03-05

申请人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

发明人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32678

摘要： A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

摘要翻译： 具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。 反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。 反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。 反应器可以利用温度控制系统来维持室的表面上恒定的温度。

公开(公告)号：US5421891A

公开(公告)日：1995-06-06

申请号：US964149

申请日：1992-10-19

申请人： Gregor A. Campbell ,  Robert W. Conn ,  Dan Katz ,  N. William Parker ,  David I. C. Pearson

发明人： Gregor A. Campbell ,  Robert W. Conn ,  Dan Katz ,  N. William Parker ,  David I. C. Pearson

IPC分类号： C23C16/513 ,  H01J37/32 ,  H05H1/46 ,  C23C16/50

CPC分类号： H01J37/3244 ,  C23C16/513 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3222 ,  H01J37/3266 ,  H01J37/32688 ,  H05H1/46

摘要： Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.

摘要翻译： 提供了等离子体沉积或蚀刻装置，其包括位于衬底处理室上方并且与衬底处理室轴向关系的等离子体源。 围绕等离子体源的是内部磁性线圈和外部磁性线圈，其布置在与等离子体源和衬底处理室的轴线垂直的同一平面中。 优选地，通过内部线圈提供第一电流，并且通过外部线圈提供沿与第一电流的方向相反的方向的第二电流。 结果是有利地在处理室中形成磁场，以实现非常均匀的处理，特别是当使用气体馈送线的独特的菱形图案时，其中金刚石布置成在四个位置处大致相切于外围的 工件在设备中被处理。