公开(公告)号：US4504215A

公开(公告)日：1985-03-12

申请号：US433147

申请日：1982-10-06

申请人： Junichiro Akiyama ,  Mitsuhiro Tanaka ,  Yoshihisa Moriuchi

发明人： Junichiro Akiyama ,  Mitsuhiro Tanaka ,  Yoshihisa Moriuchi

IPC分类号： F23D11/00 ,  F23D11/06

CPC分类号： F23D11/005 ,  F23D11/06

摘要： In the construction of a liquid fuel burner in which liquid fuel is subjected to two-staged combustion, active and passive expedients are preferably combined for complete burning of the liquid fuel. The active expedient employs specified edge construction of a fuel scatter ring for production of ideally atomized fuel whereas the passive expedient employs a barrier construction arranged at the open front end of a combination cylinder for effective prevention of fuel drop causable of incomplete fuel burning.

摘要翻译： 在液体燃料进行两级燃烧的液体燃料燃烧器的构造中，优选组合主动和被动方式以完全燃烧液体燃料。 主动方法采用燃料散射环的特定边缘结构来生产理想的雾化燃料，而被动方法采用布置在组合气缸的开放前端的阻挡结构，用于有效地防止不可燃燃料燃烧引起的燃料损失。

公开(公告)号：US08872226B2

公开(公告)日：2014-10-28

申请号：US12884516

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/66

CPC分类号： H01L21/0262 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

摘要翻译： 提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个 根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

公开(公告)号：US20140123158A1

公开(公告)日：2014-05-01

申请号：US14128418

申请日：2012-07-26

申请人： Yoshifumi Makino ,  Mitsuhiro Tanaka ,  Kenji Takehana

发明人： Yoshifumi Makino ,  Mitsuhiro Tanaka ,  Kenji Takehana

IPC分类号： G11B7/003 ,  G11B3/00

CPC分类号： G11B7/0031 ,  G11B3/00 ,  G11B7/24009 ,  G11B7/263 ,  Y10T83/141

摘要： There is provided a mold for a tape-shaped optical recording medium with which precise cutting can be performed along a cutting guide groove, the mold forming a recording groove in a tape-shaped optical recording medium, and having a plurality of recording and reproduction bumps that form a recording and reproduction groove, and a guide whose shape is different from that of the recording and reproduction bumps.

摘要翻译： 提供了一种用于带状光学记录介质的模具，可以沿着切割引导槽进行精确的切割，模具在带状光学记录介质中形成记录槽，并且具有多个记录和再现凸块 形成记录和再现凹槽，以及与记录和再现凸块的形状不同的引导件。

公开(公告)号：US20130032781A1

公开(公告)日：2013-02-07

申请号：US13570665

申请日：2012-08-09

申请人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B25/183 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/7786 ,  H01L29/872 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： Provided is a crack-free epitaxial substrate with reduced warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a superlattice layer group in which a plurality of superlattice layers are laminated, and a crystal layer. The superlattice layer is formed of a first unit layer and a second unit layer made of group-III nitrides having different compositions being alternately and repeatedly laminated. The crystal layer is made of a group-III nitride and formed above the base substrate so as to be positioned at an upper side of the superlattice layer group relative to the base substrate. The superlattice layer group has a compressive strain contained therein. In the superlattice layer group, the more distant the superlattice layer is from the base substrate, the greater the compressive strain becomes.

摘要翻译： 提供了一种具有减小翘曲的无裂纹外延衬底，其中硅衬底用作基底衬底。 外延衬底包括（111）单晶Si衬底，层叠有多个超晶格层的超晶格层组和晶体层。 超晶格层由第一单位层和由具有不同组成的III-III族氮化物制成的第二单元层交替地和重复地层叠形成。 晶体层由III族氮化物制成，并且形成在基底基板上方，以便相对于基底衬底位于超晶格层组的上侧。 超晶格层组中含有压应变。 在超晶格层组中，超晶格层离基底越远，压应变越大。

公开(公告)号：US08350290B2

公开(公告)日：2013-01-08

申请号：US12543706

申请日：2009-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L31/108 ,  H01L31/18

CPC分类号： H01L31/108 ,  H01L31/022408 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

摘要翻译： 提供一种光接收装置，其具有优于常规肖特基二极管型光接收装置的光接收灵敏度，并且还具有足够强的肖特基电极的结。 由AlGaN形成并具有导电性的第一接触层，由AlGaN形成的光接收层和由AlN形成的厚度为5nm的第二接触层按照所述顺序外延形成在预定基板上，第二接触层 电极与第二接触层进入肖特基结，从而形成MIS结。 此外，在肖特基结之后，在氮气气氛下在600℃下进行30秒的热处理。

公开(公告)号：US20120168771A1

公开(公告)日：2012-07-05

申请号：US13415066

申请日：2012-03-08

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/7786 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

摘要： A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.

摘要翻译： 提供半导体器件，使得抑制反向泄漏电流，并且增强肖特基结。 半导体器件包括：外延衬底，其通过在基底衬底上层叠一组III族氮化物层而形成，使得所述III族氮化物层的（0001）表面基本上平行于衬底表面，并且肖特基电极 ，其中外延衬底包括由具有In x Al 1 Al 1 Ga z N 1的组成的第一III族氮化物形成的沟道层，由具有In x 2 Al 2 N的组成的第二III族氮化物形成的阻挡层和由第三组形成的接触层 -III氮化物与隔离层相邻，并且肖特基电极连接到接触层。 此外，在形成栅电极之后，在氮气氛下进行热处理。

公开(公告)号：US08093601B2

公开(公告)日：2012-01-10

申请号：US12442870

申请日：2007-09-25

申请人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

发明人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

IPC分类号： H01L31/00 ,  H01L29/04

CPC分类号： H01L27/124 ,  G02F1/136204

摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).

摘要翻译： 在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。 在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处， 与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜 相对于第二方向（y方向）。

公开(公告)号：US20110062493A1

公开(公告)日：2011-03-17

申请号：US12853685

申请日：2010-08-10

申请人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

发明人： Makoto MIYOSHI ,  Yoshitaka KURAOKA ,  Shigeaki SUMIYA ,  Mikiya ICHIMURA ,  Tomohiko SUGIYAMA ,  Mitsuhiro TANAKA

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462

摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.

摘要翻译： 本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。 一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由 具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体 满足0＆nlE;α＆nlE; 1的范围的 - 序列参数α。

公开(公告)号：US20110049571A1

公开(公告)日：2011-03-03

申请号：US12855744

申请日：2010-08-13

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/78 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US20090058411A1

公开(公告)日：2009-03-05

申请号：US12193851

申请日：2008-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： G01R33/07

CPC分类号： G01R33/07

摘要： An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0

摘要翻译： 本发明的一个方面提供一种磁传感器，其与传统的磁传感器相比在不低于300℃的高温范围内更好地运行。 具有异质结界面的工作层通过在室温下层叠电子浓度不大于1×1016 / cm 3的GaN的第一层和由Al x Ga 1-x N（0