Micromechanical resonator having a metal layer surrounding a cylinder formed in a base layer
    51.
    发明授权
    Micromechanical resonator having a metal layer surrounding a cylinder formed in a base layer 失效
    微机械谐振器具有围绕形成在基层中的圆筒的金属层

    公开(公告)号:US07091801B2

    公开(公告)日:2006-08-15

    申请号:US10416782

    申请日:2002-08-16

    IPC分类号: H03H9/24 H01P7/00

    CPC分类号: H01P7/065

    摘要: The invention relates to a micromechanical resonator having a bondable resonance body and a method for fabricating a micromechanical resonator for semiconductor components.The invention provides that the resonator (26) is composed successively of a first layer (16) of silicon for coupling the resonator (26) in terms of a circuit, an insulating layer (14) of silicon dioxide, a cylindrical base layer (cylinder 18), and a metal layer (20) completely surrounding the cylinder (18).The method provides that a cylindrical structure (18) (cylinder) is etched (trench etching process) in a base layer (12) of p−-doped silicon (SOI wafer) separated from a layer (16) of silicon by an insulating layer (14), and the cylindrical structure (18) is coated with a metal layer (20).

    摘要翻译: 本发明涉及一种具有可结合谐振体的微机械谐振器和用于制造用于半导体部件的微机械谐振器的方法。 本发明提供了谐振器(26)连续地由硅的第一层(16)构成,用于在电路方面耦合谐振器(26),二氧化硅的绝缘层(14),圆柱形基底层(圆柱体 18)和完全围绕所述气缸(18)的金属层(20)。 该方法提供了在与层(16)分离的p-Si掺杂硅(SOI晶片)的基底层(12)中蚀刻圆柱形结构(18)(圆柱体)(沟槽蚀刻工艺) )通过绝缘层(14),并且圆柱形结构(18)涂覆有金属层(20)。

    Tunable triple-mode mono-block filter assembly

    公开(公告)号:US07068127B2

    公开(公告)日:2006-06-27

    申请号:US09987376

    申请日:2001-11-14

    IPC分类号: H01P1/20 H01P7/00

    CPC分类号: H01P11/007 H01P1/2086

    摘要: The present invention incorporates triple-mode, mono-block resonators that are tunable. Four novel and unobvious methods of tuning are disclosed. The first tuning method is to mechanically grind areas on three orthogonal faces of the mono-block in order to change the resonant frequencies of the three modes in each block. Another method of tuning frequency is to cut a slot within a face of the resonator. A third method of tuning the mono-block is to tune the resonant frequency of a particular mode by removing small circular areas of the conductive surface from a particular face of the mono-block. The fourth, tuning method is the use of discrete tuning elements, with 3 elements distributed among three orthogonal faces of the mono-block, to affect the necessary change of the resonant frequencies.

    Method and system for frequency trimming
    53.
    发明申请
    Method and system for frequency trimming 审中-公开
    频率修整的方法和系统

    公开(公告)号:US20060091981A1

    公开(公告)日:2006-05-04

    申请号:US10980998

    申请日:2004-11-04

    申请人: Joe Smith John Estes

    发明人: Joe Smith John Estes

    IPC分类号: H01P7/00

    CPC分类号: H01P7/00

    摘要: A method (200) of frequency trimming an electronic device (100) such as a resonator or filter can include the steps of providing (202) an external trimmable portion (10) of a multi-port trim network and selectively removing (204) at least a portion of the external trimmable portion to selectively increase or decrease the frequency of the electronic device. Selectively removing can include selectively removing (206) the portion of the external trimmable portion to selectively increase the frequency by reducing a parallel capacitance of the external trimmable portion or alternatively selectively removing (208) the portion of the external trimmable portion to selectively decrease the frequency by increasing a series inductance of the external trimmable portion. Trimming of the frequency up or down can be done without affecting (210) any main resonating structures of the electronic device and without adding (212) metal to the external trimmable portion.

    摘要翻译: 对诸如谐振器或滤波器的电子设备(100)进行频率修整的方法(200)可以包括以下步骤:提供(202)多端口装饰网络的外部可调节部分(10)并且选择性地移除(204)在 外部可调节部分的至少一部分以选择性地增加或减少电子设备的频率。 选择性地移除可以包括选择性地移除(206)外部可调节部分的部分以通过减小外部可调节部分的并联电容来选择性地增加频率,或者或者选择性地移除(208)外部可调节部分的部分以选择性地降低频率 通过增加外部可调节部分的串联电感。 可以在不影响电子设备的任何主谐振结构(210)的情况下对频率进行上下调整,而不需要向外部可调节部分添加(212)金属。

    Systems and methods for blocking microwave propagation in parallel plate structures
    55.
    发明申请
    Systems and methods for blocking microwave propagation in parallel plate structures 有权
    在平行板结构中阻挡微波传播的系统和方法

    公开(公告)号:US20050195051A1

    公开(公告)日:2005-09-08

    申请号:US10796398

    申请日:2004-03-08

    申请人: William McKinzie

    发明人: William McKinzie

    摘要: Systems and methods are taught for blocking the propagation of electromagnetic waves in parallel-plate waveguide (PPW) structures. Periodic arrays of resonant vias are used to create broadband high frequency stop bands in the PPW, while permitting DC and low frequency waves to propagate. Some embodiments of resonant via arrays are mechanically balanced, which promotes improved manufacturability. Important applications include electromagnetic noise reduction in layered electronic devices such as circuit boards, ceramic modules, and semiconductor chips.

    摘要翻译: 教导系统和方法阻止平行板波导(PPW)结构中电磁波的传播。 谐振通孔的周期阵列用于在PPW中产生宽带高频阻带,同时允许DC和低频波传播。 谐振通孔阵列的一些实施例是机械平衡的,这促进了改进的可制造性。 重要的应用包括诸如电路板,陶瓷模块和半导体芯片的分层电子设备中的电磁噪声降低。

    Magnetostatic wave device with specified distances between magnetic
garnet film and ground conductors
    57.
    发明授权
    Magnetostatic wave device with specified distances between magnetic garnet film and ground conductors 失效
    磁性石榴石薄膜与接地导体之间具有指定距离的静电波装置

    公开(公告)号:US6114929A

    公开(公告)日:2000-09-05

    申请号:US247590

    申请日:1999-02-10

    申请人: Hitoyoshi Kurata

    发明人: Hitoyoshi Kurata

    IPC分类号: H03H2/00 H01P7/00 H01P1/215

    CPC分类号: H03H2/001

    摘要: A magnetostatic wave device including a magnetic garnet film which excites and propagates magnetostatic waves upon receiving electromagnetic waves, a magnetic field generator which applies a magnetic field to the magnetic garnet film, first and second ground conductors opposing each other and sandwiching the magnetic garnet film therebetween, and an RF signal feeder line disposed between the magnetic garnet film and the first ground conductors. The first ground conductor has an opposing surface opposed to one main surface of the magnetic garnet film. The second ground conductor has an opposing surface opposed to the other main surface of the magnetic garnet film. In the device,t.sub.1 .gtoreq.t.sub.R +5 .mu.mt.sub.2 .gtoreq.0 .mu.m, andt.sub.1 +t.sub.2 .ltoreq.500 .mu.m,where t.sub.1 is a distance between the opposing surface of the first ground conductor and the one main surface of the magnetic garnet film, t.sub.2 is a distance between the opposing surface of the second ground conductor and the other opposing surface of the magnetic garnet film and t.sub.R is a thickness of the RF signal feeder line.

    摘要翻译: 一种静磁波装置,其包括在接收电磁波时激励并传播静磁波的磁性石榴石膜,向磁性石榴石膜施加磁场的磁场发生器,彼此相对的第一和第二接地导体,并将磁性石榴石膜夹在其间 以及设置在所述磁性石榴石膜和所述第一接地导体之间的RF信号馈送线。 第一接地导体具有与磁性石榴石膜的一个主表面相对的相对表面。 第二接地导体具有与磁性石榴石膜的另一个主表面相对的相对表面。 在器件中,t1> / = tR +5μmt2> / =0μm,t1 + t2 <500μm,其中t1是第一接地导体的相对表面与一个主体之间的距离 磁性石榴石膜的表面,t2是第二接地导体的相对表面与磁性石榴石膜的另一相对表面之间的距离,t R是RF信号馈送线的厚度。

    MCM with high Q overlapping resonator
    58.
    发明授权
    MCM with high Q overlapping resonator 失效
    具有高Q重叠谐振器的MCM

    公开(公告)号:US6075427A

    公开(公告)日:2000-06-13

    申请号:US12304

    申请日:1998-01-23

    摘要: An MCM including a resonator made using conventional MCM fabrication techniques. The MCM's resonator is constructed with overlapping first and second spiral-shaped regions of metallic material separated by a layer of dielectric material. A via disposed in the layer of dielectric material, couples the spiral-shaped regions of metallic material together, thereby utilizing self winding and internal capacitance to gain resonance at frequencies between 500 MHz to 3GHz. The internal capacitance is increased by controlling the overlap between the first and second spiral-shaped regions of metallic material. On a high-resistivity substrate, the monolithic resonator achieves a Q of at least 19 at approximately 900MHz and at least 24 at approximately 2GHz.

    摘要翻译: 包括使用常规MCM制造技术制造的谐振器的MCM。 MCM的谐振器由重叠的第一和第二螺旋形的金属材料区域构成,由一层电介质材料隔开。 布置在介电材料层中的通孔将金属材料的螺旋形区域耦合在一起,从而利用自绕组和内部电容来在500MHz至3GHz之间的频率处获得谐振。 通过控制金属材料的第一和第二螺旋形区域之间的重叠来增加内部电容。 在高电阻率基板上,单片谐振器在大约900MHz处获得至少19的Q,在大约2GHz下达到至少24的Q。

    Multilayer microelectronic circuit
    59.
    发明授权
    Multilayer microelectronic circuit 失效
    多层微电子电路

    公开(公告)号:US6046409A

    公开(公告)日:2000-04-04

    申请号:US31074

    申请日:1998-02-26

    摘要: A multilayer microelectronic circuit to be directly mounted on a substrate and to be used, for example, as a resonator. The multilayer microelectronic circuit comprises a plurality of dielectric layers and patterned electrodes which are laminated one upon another to form a laminated structure, the dielectric layers and the patterned electrodes forming an electrical circuit. The laminated structure has side surfaces extending along a direction in which the dielectric layers and the patterned electrodes are laminated. An input line is formed at one of the side surfaces and connected with an input section of the electrical circuit. An output line is formed at one of the side surfaces and connected with an output section of the electrical circuit. A grounding line is formed at one of the side surfaces and connected with a grounding section of the electrical circuit. Additionally, a signal line formed at one of the side surfaces, for connecting sections of the electrical circuit. The signal line has an end positioned adjacent a mounting surface at which the multilayer microelectronic circuit is directly mounted on the substrate, in which the end of the signal line is separate from the mounting surface so as to be insulated from electrical contact with the substrate.

    摘要翻译: 一种多层微电子电路,其直接安装在基板上并用作例如谐振器。 多层微电子电路包括多个介质层和图案化电极,它们彼此层叠以形成层压结构,电介质层和图案化电极形成电路。 层叠结构具有沿着电介质层和图案化电极层叠的方向延伸的侧面。 输入线形成在一个侧面并与电路的输入部分连接。 输出线形成在一个侧表面并与电路的输出部分相连接。 在一个侧面形成接地线,并与电路的接地部连接。 另外,形成在一个侧表面上用于连接电路的部分的信号线。 信号线具有位于多个微电子电路直接安装在基板上的安装表面附近的端部,其中信号线的端部与安装表面分离,从而与基板电绝缘。

    Thin-film multilayered electrode, high-frequency resonator, and
high-frequency transmission line
    60.
    发明授权
    Thin-film multilayered electrode, high-frequency resonator, and high-frequency transmission line 失效
    薄膜多层电极,高频谐振器和高频传输线

    公开(公告)号:US5920244A

    公开(公告)日:1999-07-06

    申请号:US786691

    申请日:1997-01-22

    CPC分类号: H01P3/088 H01P1/203 H01P7/10

    摘要: An inexpensive and reliable thin-film multilayered electrode which is formable on a dielectric substrate such as a ceramic substrate. A thin-film multilayered electrode has thin-film conductors and thin-film dielectrics formed by alternately layering on a dielectric substrate with a predetermined dielectric constant. The dielectric constant for each of the thin-film dielectrics is selected such that the electromagnetic field created in the dielectric substrate and the electromagnetic field created in each of the thin-film dielectrics are substantially in phase with each other when the thin-film multilayered electrode is used at a predetermined frequency, and the film thickness of each of the thin-film dielectrics falls between 0.2 .mu.m and 2 .mu.m; and the film thickness of each of the thin-film conductors, other than a thin-film conductor formed most distant from the dielectric substrate, is thinner than the skin depth at the predetermined frequency.

    摘要翻译: 一种廉价可靠的薄膜多层电极,其可以在诸如陶瓷衬底的电介质衬底上形成。 薄膜多层电极具有薄膜导电体和薄膜电介质,薄膜电介质是通过在介电基片上以预定的介电常数交替分层而形成的。 选择每个薄膜电介质的介电常数,使得当电介质基板中产生的电磁场和在每个薄膜电介质中产生的电磁场基本上彼此同相时,薄膜多层电极 以预定频率使用,薄膜电介质的膜厚在0.2μm〜2μm之间; 并且除了形成在最远离电介质基板的薄膜导体之外的每个薄膜导​​体的薄膜厚度比预定频率处的趋肤深度薄。