公开(公告)号：US11994799B2

公开(公告)日：2024-05-28

申请号：US17864748

申请日：2022-07-14

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Jun Hatakeyama

IPC分类号： G03F7/004 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/12 ,  C07C309/13 ,  C07C381/12 ,  G03F7/027 ,  G03F7/029 ,  G03F7/033 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0045 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/12 ,  C07C309/13 ,  C07C381/12 ,  G03F7/0048 ,  G03F7/027 ,  G03F7/029 ,  G03F7/033 ,  G03F7/0382 ,  G03F7/2006 ,  G03F7/30

摘要： A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

公开(公告)号：US20240168383A1

公开(公告)日：2024-05-23

申请号：US18533532

申请日：2023-12-08

申请人： ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

发明人： Hyung-Tak JEON ,  Ji-Ung KIM ,  Seung-Kyu SONG ,  Geun HUH

IPC分类号： G03F7/075 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/2004

摘要： The structure for an optical device according to an embodiment comprises a protective layer formed from a photocurable siloxane resin composition, wherein the protective layer is capable of serving not only to protect or seal a light emitting element such as a mini-LED chip from external heat or moisture, but also to improve such optical characteristics as brightness and contrast ratio of light emitted from the light emitting element through the light diffusion.

公开(公告)号：US20240168381A1

公开(公告)日：2024-05-23

申请号：US18377365

申请日：2023-10-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jincheol PARK ,  Seonghyeon AHN ,  Honggu IM ,  Sungmin KO ,  Juyoung KIM ,  Juhyeon PARK ,  Naery YU

IPC分类号： G03F7/022 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0226 ,  G03F7/0045 ,  G03F7/2004

摘要： A photoresist composition for extreme ultraviolet (EUV) radiation and a method of manufacturing a semiconductor device, the photoresist composition includes a polymer resin; a photoacid generator; and a photoreactive additive that includes at least two diazonaphthoquinone (DNQ) groups, wherein the at least two DNQ groups are represented by Formula 1 or Formula 2 described herein.

公开(公告)号：US20240168379A1

公开(公告)日：2024-05-23

申请号：US18380475

申请日：2023-10-16

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Jun HATAKEYAMA

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： The present invention is a positive resist material containing a compound having two or more urethane groups and having two or more carboxy groups that are each substituted with an acid-labile group and are bonded to the urethane groups via a linking group. This provides: a positive resist material that has higher sensitivity and higher resolution than conventional positive resist materials and smaller edge roughness and CDU, and allows excellent pattern profile after exposure to light; and a patterning process.

公开(公告)号：US20240168376A1

公开(公告)日：2024-05-23

申请号：US17754974

申请日：2022-04-12

申请人： SUZHOU CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Zhiwei ZHANG

IPC分类号： G03F7/004 ,  G02B1/04 ,  G03F7/00 ,  G02F1/1335

CPC分类号： G03F7/0045 ,  G02B1/04 ,  G03F7/0007 ,  G02F1/133514

摘要： A photoresist and a display device are provided. A colorant of the photoresist includes a blue pigment and a purple dye having an electron withdrawing group. The electron withdrawing group promotes electron transitions, causing blue shifts in materials. Under a condition without changing a backlight spectrum having low blue light, it can prevent blue light from hurting user's retina, thereby satisfying a need of anti-blue light. Problems of low the color gamut and low transmittance in current technology can also be prevented.

公开(公告)号：US20240168374A1

公开(公告)日：2024-05-23

申请号：US18152600

申请日：2023-01-10

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： An-Ren ZI ,  Ching-Yu CHANG

IPC分类号： G03F7/004 ,  G03F1/24 ,  G03F7/20 ,  G03F7/40 ,  H01L21/027

CPC分类号： G03F7/0043 ,  G03F1/24 ,  G03F7/40 ,  G03F7/70033 ,  H01L21/0275

摘要： A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to an EUV radiation, and developing the exposed photoresist layer. The photoresist layer has a composition including a metal complex including a metallic core and at least one ligand bonded to the metallic core. The at least one ligand includes an alkenyl group, an alkynyl group, or a combination thereof.

公开(公告)号：US20240168371A1

公开(公告)日：2024-05-23

申请号：US18165759

申请日：2023-02-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Da Huang ,  Chun-Fu Kuo ,  Yi Hsing Yu ,  Li-Te Lin

IPC分类号： G03F1/68 ,  G03F1/48 ,  G03F7/004 ,  G03F7/075 ,  H01L21/3065

CPC分类号： G03F1/68 ,  G03F1/48 ,  G03F7/0043 ,  G03F7/075 ,  H01L21/3065

摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes forming a patterned hardmask over an underlying target layer on a substrate; and performing plasma fabrication operations in parallel on the patterned hardmask and underlying target layer in a plasma etching chamber using a plasma etch gas and a selective source gas. The plasma operations include forming a protective cap on the patterned hardmask; and removing portions of the underlying layer that are not covered by the patterned hardmask. In various embodiments, the selective source gas includes a chemical compound that includes a halogen gas that can be dissociated into a metal and a halogen, and the plasma operations include dissociating the metal and the halogen in the selective source gas and forming a protective cap on the patterned hardmask using the metal that has been dissociated.

公开(公告)号：US11988957B2

公开(公告)日：2024-05-21

申请号：US18317865

申请日：2023-05-15

申请人： ILLUMINA, INC. ,  ILLUMINA CAMBRIDGE LIMITED

发明人： Jeffrey S. Fisher ,  Brian D. Mather ,  Maria Candelaria Rogert Bacigalupo ,  Justin Fullerton ,  Ludovic Vincent ,  Lewis J. Kraft ,  Sahngki Hong ,  Boyan Boyanov ,  M. Shane Bowen ,  Sang Park ,  Wayne N. George ,  Andrew A. Brown

IPC分类号： G03F7/00 ,  C08F220/56 ,  C08G77/04 ,  C12Q1/6869 ,  G03F7/075 ,  G03F7/16 ,  G03F7/004

CPC分类号： G03F7/0002 ,  C08F220/56 ,  C08G77/04 ,  C12Q1/6869 ,  G03F7/0757 ,  G03F7/165 ,  G03F7/0046

摘要： An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

公开(公告)号：US20240160105A1

公开(公告)日：2024-05-16

申请号：US18271908

申请日：2022-01-05

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Hitoshi Maruyama ,  Kumiko Hayashi

IPC分类号： G03F7/075 ,  C08G77/04 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0757 ,  C08G77/04 ,  G03F7/0045 ,  G03F7/168 ,  G03F7/2004

摘要： Provided is a photosensitive resin composition comprising: (A) a silicone resin having an epoxy group and/or a phenolic hydroxyl group; (B) a photoacid generator represented by formula (B); and (C) a carboxylic acid quaternary ammonium compound.

公开(公告)号：US20240160101A1

公开(公告)日：2024-05-16

申请号：US18370555

申请日：2023-09-20

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Jun Hatakeyama ,  Tatsuya Yamahira ,  Yuki Suda

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20

CPC分类号： G03F7/0045 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0397 ,  G03F7/2004

摘要： A resist composition comprising a sulfonium salt composed of a sulfonate anion having a carbon atom to which an iodine atom is bonded and a sulfonium cation having the formula (1) exhibits a high sensitivity and reduced LWR or improved CDU.